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smd code HF transistor Abstract: transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76 Text: • hbS3131 0DE47Qfl 14fl ■ N AMER P H I L I P S / D I S C R E T E APX BF824 fc.7E D J V_ H.F. SILICON PLANAR EPITAXIAL T RA N SIST O R P-N-P transistor in a plastic SO T-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for S M D applications.	OCR Scan	PDF	hbS3131 QDE47QS BF824 OT-23 7z72158 DDEM713 BF824 7z72157 7z72161 smd code HF transistor transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76
Untitled Abstract: No abstract text available Text: • bh53131 005CH15 h M N ANER PHILIPS/DISCRETE CNX35 CNX36 CNX39 S5E D T - 4 1 -0 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for TTL integrated circuits.	OCR Scan	PDF	bh53131 005CH15 CNX35 CNX36 CNX39 CNX35U, CNX36U CNX39U.
BUZ84A Abstract: No abstract text available Text: PowerMOS transistor_ BUZ84A_ \| N AUER PHILIPS/DISCRETE ObE D • bbSBTBl 0 0 m 7 0 3 5 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metai envelope. This device is intended for use in	OCR Scan	PDF	BUZ84A_ BUZ84A bbS3T31 T-39-13 BUZ84A
bd239a ti Abstract: No abstract text available Text: 11 N AMER PHILIPS/DISCRETE . bL>53T31 0011363 5 • 2SE D BD239; BD239A BD239B; BD239C SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier and high-speed switching applications.P-N-P complements are BD240; 240A; 240B and BD240C.	OCR Scan	PDF	53T31 BD239; BD239A BD239B; BD239C BD240; BD240C. BD239 bd239a ti
iran Abstract: BUK455-450B T0220AB taig Text: N AMER PHILIPS/DISCRETE ESE D • bbS3T31 0050505 =1 ■ PowerMOS transistor BUK455-450B T-3T-/3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	bbS3T31 BUK455-450B T-37-13 iran BUK455-450B T0220AB taig
BYP22 Abstract: step recovery diode BYP22-50 diode t03 J-703 Av Text: N AMER PHILIPS/DISCRETE 2SE » • J 1*1.53131 0GS237S T ■ BYP22 SERIES 7 ^ 0 3 -/9 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring lo w reverse	OCR Scan	PDF	0GS237S BYP22 m2485 G0S53S3 T-03-/? m2486 T-03-/9 m2489 step recovery diode BYP22-50 diode t03 J-703 Av
BDT62B Abstract: No abstract text available Text: BDT62; 62A BDT62B; 62C _ J K . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circu it for audio output stages and general am plifier and switching applications. TO-220 plastic envelope. N-P-N complements are BDT63,	OCR Scan	PDF	BDT62; BDT62B; O-220 BDT63, bbS3T31 BDT62B