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    HSMC Corporation H2N5551-B

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    Bristol Electronics H2N5551-B 24,000
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    H2N5551 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H2N5551 Hi-Sincerity Mocroelectronics NPN Epitaxial Planar Transistor Original PDF

    H2N5551 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H2N5401

    Abstract: H2N5551
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2002.02.20 Page No. : 1/4 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features • Complements to PNP Type H2N5401


    Original
    PDF HE6219 H2N5551 H2N5551 H2N5401 H2N5401

    H2N5401

    Abstract: H2N5551
    Text: HI-SINCERITY Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5 MICROELECTRONICS CORP. H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features TO-92 • Complements to PNP Type H2N5401


    Original
    PDF HE6219 H2N5551 H2N5551 H2N5401 Diss60 183oC 217oC 260oC H2N5401

    H2N5401

    Abstract: H2N5551 HE6203
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6203 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Page No. : 1/5 H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages.


    Original
    PDF HE6203 H2N5401 H2N5401 H2N5551 183oC 217oC 260oC H2N5551 HE6203

    H2N5401

    Abstract: H2N5551 HE620
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6203 Issued Date : 1992.09.22 Revised Date : 2002.02.20 Page No. : 1/4 H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages.


    Original
    PDF HE6203 H2N5401 H2N5401 H2N5551 H2N5551 HE620