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    H11D1 Price and Stock

    Vishay Semiconductors H11D1

    OPTOISO 5.3KV TRANS W/BASE 6DIP
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    DigiKey H11D1 Tube 1,951 1
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    onsemi H11D1SR2VM

    OPTOISO 4.17KV TRANS W/BASE 6SMD
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    onsemi H11D1SR2M

    OPTOISO 4.17KV TRANS W/BASE 6SMD
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    DigiKey H11D1SR2M Cut Tape 750 1
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    H11D1SR2M Digi-Reel 750 1
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    Mouser Electronics H11D1SR2M 4,454
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    H11D1SR2M 17 1
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    Newark H11D1SR2M Cut Tape 1,000 1
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    onsemi H11D1SM

    OPTOISO 4.17KV TRANS W/BASE 6SMD
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    DigiKey H11D1SM Tube 605 1
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    onsemi H11D1M

    OPTOISO 4.17KV TRANS W/BASE 6DIP
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    DigiKey H11D1M Tube 516 1
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    Find more H11D1 price and stock on Findchips.com

    H11D1 Datasheets (78)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H11D1 Fairchild Semiconductor 6-pin DIP high voltage transistor Optocoupler Original PDF
    H11D1 Fairchild Semiconductor High Voltage Phototransistor Optocoupler Original PDF
    H11D1 Fairchild Semiconductor Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV TRANS W/BASE 6DIP Original PDF
    H11D1 Infineon Technologies Optocoupler, 6 Pin, Sngl, 20% CTR, High Reverse Voltage Original PDF
    H11D1 Infineon Technologies OptoCoupler, Phototransistor, 5.3 KV, TRIOS Optocoupler Original PDF
    H11D1 Isocom Components 6V, 60mA high voltage optically coupled isolated phototransistor output Original PDF
    H11D1 Lite-On Technology Optocoupler Original PDF
    H11D1 Lite-On Technology Optoisolator high voltage transistor output 300V, isolation 5000V Original PDF
    H11D1 Motorola 6-Pin DIP Optoisolators, 300 Volts Original PDF
    H11D1 Siemens Original PDF
    H11D1 Vishay Semiconductors Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV TRANS W/BASE 6DIP Original PDF
    H11D1 Vishay Siliconix Optocouplers Original PDF
    H11D1 Fairchild Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - High-Voltage Photo Transistor Output 5.3kV Min. 300V BV CEO Scan PDF
    H11D1 Fairchild Semiconductor Optoelectronics Data Book 1979 Scan PDF
    H11D1 Fairchild Semiconductor Optoelectronics Data Book 1980 Scan PDF
    H11D1 General Electric Semiconductor Data Handbook 1977 Scan PDF
    H11D1 General Instrument High Voltage VDE Approved Phototransistor Optocouplers Scan PDF
    H11D1 Isocom Components Optoelectronics Data Book 1996 Scan PDF
    H11D1 Motorola Switchmode Datasheet Scan PDF
    H11D1 Motorola European Master Selection Guide 1986 Scan PDF

    H11D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H11DX

    Abstract: H11D1 4N38 H11D2 H11D3 H11D4
    Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


    Original     		PDF H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700 H11D1 4N38 H11D2 H11D3 H11D4

    H11D1

    Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
    Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 6 1 2 5


    Original     		PDF H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 DB91077m-AAS/A1 H11D1 H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X

    25E 106

    Abstract: H11D1M
    Text: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high


    Original     		PDF 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M H11DXM MOC8204M MOC8204M, 25E 106 H11D1M

    H11D3

    Abstract: RBE1
    Text: H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCER=300 V


    Original     		PDF H11D1/H11D2/H11D3 H11D1/H11D2, H11D3, E52744 H11D1/2/3 H11D1/2/3 H11D3 RBE1

    H11D1-X007

    Abstract: H11D1 H11D2 H11D3 H11D4
    Text: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation


    Original     		PDF H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC UL1577, E52744 H11D1-X007 H11D1 H11D2 H11D3 H11D4

    MOTOROLA 813 transistor

    Abstract: h11d1 motorola transistor 813 motorola QT Optoelectronics H11D1 H11D2
    Text: QT Optoelectronics MOTOROLA Order this document by H11D1/D SEMICONDUCTOR TECHNICAL DATA H11D1 * GlobalOptoisolator H11D2 6-Pin DIP Optoisolators High Voltage Transistor Output 300 Volts [CTR = 20% Min] *Motorola Preferred Device STYLE 1 PLASTIC The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes


    Original     		PDF H11D1/D H11D1 H11D2 H11D1 H11D2 H11D1/D* MOTOROLA 813 transistor h11d1 motorola transistor 813 motorola QT Optoelectronics

    H11D2

    Abstract: H11D1-X007
    Text: H11D1/ H11D2/ H11D3/ H11D4 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current


    Original     		PDF H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, i179004 E52744 VDE0884) IEC60950 H11D2 H11D1-X007

    Untitled

    Abstract: No abstract text available
    Text: H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A 1 6 B C


    Original     		PDF H11D1/H11D2/H11D3/H11D4 i179004 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC H11D1/H11D2/H11D3/H11D4 18-Jul-08

    H11D3

    Abstract: DSA0011162
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original     		PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 17-August-01 H11D3 DSA0011162

    H11D1

    Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
    Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 2.54 7.0


    Original     		PDF H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 H11D2 H11D1 H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X

    h11dx

    Abstract: No abstract text available
    Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


    Original     		PDF H11DX H11D1 H11D2 H11D3 H11D4 H11D1, H11D2, H11D3, H11D4, E90700

    phototransistor 3 pin

    Abstract: 3 pin phototransistor MOC8204 phototransistor datasheet 4N38 H11D1 H11D2 H11D3 H11D4
    Text: Optoelectronics Products High Voltage Phototransistor Output; DC Sensing Input CTR @10 mA IF % BVCEO(V) BVCBO(V) BVECO(V) tON/tOFF(µs) Min Max Min Min Min Max VISOACRMS (kV) 1 minute 4N38 20 — 80 80 7 — 5.3 H11D1 20 — 300* 300 7 — 5.3 H11D2 20 —


    Original     		PDF H11D1 H11D2 H11D3 H11D4 MOC8204 phototransistor 3 pin 3 pin phototransistor MOC8204 phototransistor datasheet 4N38 H11D1 H11D2 H11D3 H11D4

    smd s101

    Abstract: s101 6-pin RM1M VC200
    Text: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES * * * • * * * * * * * * CTR at lp=10 mA, BVceR=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Coliector-Emitter Breakdown


    OCR Scan     		PDF H11D1/H11D2/H11D3 H11D1/H11D2, E52744 H11D1/2/3 smd s101 s101 6-pin RM1M VC200

    Untitled

    Abstract: No abstract text available
    Text: 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications_ HARRI S SEMICOND SECTOR 01E 4302271 37E Photon Coupled Isolator H11D1-H11D4 0G271ÖÖ A B C D E F G H J K V N P R S . rV i& absolute maximum ratings: 25°C W INFRARED EMITTING DIODE


    OCR Scan     		PDF H11D1-H11D4 0G271Ã 33mW/Â 92CS-42662 92CS-429S1

    transistor SMD 11d

    Abstract: 11D transistor Diode smd 11D J
    Text: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS* HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES Packaqe Dimensions in Inches mm . • CTR at lF=10 mA, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation ♦ " I?1 fSlVl


    OCR Scan     		PDF H11D1/H11D2/H11D3 H11D1/2/3 transistor SMD 11d 11D transistor Diode smd 11D J

    VDE0303

    Abstract: No abstract text available
    Text: Infineon H11D1/H11D2/H11D3/H11D4 FEATURES CTR at / F=10 mA, BVCER=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCer =300 V - H11D3/H11D4, BVc e r=200 V Isolation Test Voltage: 5300 VRMS


    OCR Scan     		PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 5mA10J 1-888-lnfineon 11D1/2/3/4 VDE0303

    C3883

    Abstract: GE H11D2 verin VDE0833 H11D1 GE
    Text: MOTOROLA B SEMICONDUCTOR TECHNICAL DATA H11D1 H11D2 H11D3 H11D4 6-Pin DIP Optoisolators Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e , s ilico n , p h o to tra n s is to r d e te cto rs in a sta n d a rd 6-pin DIP package. T hey are d esig n ed fo r


    OCR Scan     		PDF H11D1 H11D3 E54915 C3883 GE H11D2 verin VDE0833 H11D1 GE

    11d2

    Abstract: No abstract text available
    Text: Optolsolator Specifications H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor The H11D1-H11D4 are gallium arsenide, infrared emitting diodes coupled with silicon high voltage phototransistors in a dual in-line package. These devices are also available in


    OCR Scan     		PDF H11D1-H11D4 H11D1-H11D4 0110b 11d2

    Untitled

    Abstract: No abstract text available
    Text: ISOCOfl COMPONENTS LTD 4886510 ISOCOH INC ?5C D • 4flflfc,51D Q00D172 5 2 7 75C 0 0 1 7 2 D H11D1 H11D2 H11D3 H11D4 ■ iso ¿ //- &B High Voltage Optically Coupled Isolators PACKAGE DIMENSIONS IN INCHES MM -I H 066 t t6.2000» rsc (6 10) • o o c^ L J l_l L J


    OCR Scan     		PDF Q00D172 H11D1 H11D2 H11D3 H11D4

    H11DI

    Abstract: No abstract text available
    Text: Optoisolator Specifications H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor INCHES ftiiLU M E T E R : MIN MAX MIN MAX CCATINjr. T h e H I I D I -H 1 1 D 4 a r e gallium arse n id e , in fra re d em ittin g


    OCR Scan     		PDF H11D1-H11D4 H11DI

    C1775

    Abstract: h11dx C2079 C1770 C1771 H11D1 H11D2 H11D3 C1773 RBE1
    Text: [su HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11D1 H11D2 H11D3 PACKAGE DIMENSIONS DESCRIPTION The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


    OCR Scan     		PDF H11D1 H11D2 H11D3 H11DX H11D1-D2, H11D3, H11D1, H11D2, H11D3â E90700 C1775 C2079 C1770 C1771 H11D3 C1773 RBE1

    11d2

    Abstract: C1770 h11dx C1775 transistor C1775
    Text: HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS II H11D1 H11D2 H11D3 PACKAGE DIMENSIONS rib rib rib d e s c r ip t io n The H11DX is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled


    OCR Scan     		PDF H11D1 H11D2 H11D3 H11DX H11D1-D2, H11D3, H11D1, H11D2, H11D3-- E90700 11d2 C1770 C1775 transistor C1775

    Untitled

    Abstract: No abstract text available
    Text: HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


    OCR Scan     		PDF H11D1/1Z H11D2/2Z H11D3/3Z H11DX H11D1-D2, H11D3, H11D1, H11D2, H11D3-- C1774

    Untitled

    Abstract: No abstract text available
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVcer Voltage Optocoupler FEATURES Dimensions in inches mm • CTR at / F=1 O m A, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Em itter Breakdown Voltage


    OCR Scan     		PDF H11D1/H11D2/H11D3/H11D4 D3/H11