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    G746 Search Results

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    G746 Price and Stock

    TE Connectivity FG7463

    RF ANT 771MHZ WHIP STR N FEM
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    DigiKey FG7463 Bulk 4
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    • 100 $102.9
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    Avnet Abacus FG7463 113 Weeks 4
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    Mouser Electronics FG7463
    • 1 $113.12
    • 10 $107.28
    • 100 $104.36
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    Sager FG7463 1
    • 1 $121.65
    • 10 $121.65
    • 100 $93.92
    • 1000 $88.7
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    TE Connectivity FG7466

    RF ANT 771MHZ WHIP STR N FEM
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    DigiKey FG7466 Bulk 10
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    Avnet Abacus FG7466 113 Weeks 10
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    Mouser Electronics FG7466
    • 1 -
    • 10 $153.02
    • 100 $149.64
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    Sager FG7466 10
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    • 10 $178.6
    • 100 $152.05
    • 1000 $147.83
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    Fix Supply BULK-CS-GG7-46

    G-7 Garolite Sheet - 1/2" Thick
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    DigiKey BULK-CS-GG7-46 Bulk 1
    • 1 $275.46
    • 10 $275.46
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    Daniels Manufacturing Corporation (DMC) G746

    Measuring Tools Gage Go .2020 No-Go 0.21
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    Mouser Electronics G746
    • 1 $479.27
    • 10 $465.12
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    Laird Connectivity Inc FG7463

    OMNI,FG,746-796MHz, - Bag (Alt: FG7463)
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    Avnet Americas FG7463 Bag 4
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    • 10 $76.96585
    • 100 $71.52824
    • 1000 $71.52824
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    Master Electronics FG7463
    • 1 $117.72
    • 10 $97.85
    • 100 $83.88
    • 1000 $81.88
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    G746 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SLA7078MPR

    Abstract: G746 SLA7062M yg6260
    Text: 1-2 Motor Driver ICs Application Note • Setup Precautions ■ Handling Precautions ●Recommended mounting torque 0.588 to 0.784 [N•m] 6.0 to 8.0 [kgf•cm] ●Recommended silicone grease Shin-Etsu Chemical Co., Ltd.: G746 GE Toshiba Silicones Co., Ltd.: YG-6260


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    PDF YG-6260 SC102 SMA7036M/SLA7031M/SLA7032M/SLA7033M SLA7050M/SLA7051M/SLA7052M SLA7060M/SLA7061M/SLA7062M SLA7065M/SLA7066M/SLA7067M SLA7070MR/SLA7071MR/SLA7072MR/SLA7073MR SLA7070MPR/SLA7071MPR/SLA7e SLA7078MPR G746 SLA7062M yg6260

    shinetsu G746

    Abstract: G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-001 Date : 23th Dec. 1998 Prepared :K.Kajiwara Confirmed :T.Ohkawa SUBJECT: Characteristics for Thermal Silicon Compound "ShinEtsu G746". INTRODUCTION: When the RF module is mounted onto a heat sink of a equipment, thermal


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    PDF AN-GEN-001 25deg 6x10E-3 2x10E14 150deg shinetsu G746 G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical

    Dow Corning 747

    Abstract: 2a265vac 2A265 s202t01f S202T01 shin-etsu g747 sharp S202T02 2A125VAC s202t02 origin 4pin
    Text: S102T01 Series S202T01 Series IT rms ≤2A, Non-Zero Cross type Low profile SIP 4pin Triac output SSR S102T01 Series S202T01 Series ∗ Zero cross type is also available. (S102T02 Series/ S202T02 Series) • Description ■ Agency approvals/Compliance S102T01 Series and S202T01 Series Solid State


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    PDF S102T01 S202T01 S102T02 S202T02 UL508, E94758 Dow Corning 747 2a265vac 2A265 s202t01f shin-etsu g747 sharp S202T02 2A125VAC origin 4pin

    sma6822

    Abstract: sma6822m SMA6820 2451 mosfet B105 CF35 G746 SC102 SMA6820MP YG6260
    Text: SMA6822MP High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Built-in pre-drive IC and 3 bootstrap diodes as a high-side drive power supply ▪ CMOS compatible input 5 V ▪ High-side gate driver using bootstrap circuit or floating power supply


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    PDF SMA6822MP 24-pin) SMA6822MP sma6822 sma6822m SMA6820 2451 mosfet B105 CF35 G746 SC102 SMA6820MP YG6260

    F 2452 mosfet

    Abstract: SMA6862M B105 CF35 G746 SC102 SMA6800M YG6260
    Text: SMA6862M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating


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    PDF SMA6862M 24-pin) SMA6862M F 2452 mosfet B105 CF35 G746 SC102 SMA6800M YG6260

    M100 TRIAC

    Abstract: No abstract text available
    Text: TMA16xP Series Triac Bidirectional Triode Thyristor Features and Benefits Description ▪ Exceptional reliability ▪ Small fully-molded SIP package with heatsink mounting for high thermal dissipation and long life ▪ VDRM of 400 or 600 V ▪ 16 ARMS on-state current


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    PDF TMA16xP M100 TRIAC

    3025Z

    Abstract: 02578 SC102 diode G746 SC102 SI-3025ZD SI-3025ZF SSJ-02578
    Text: SI-3025ZF Data Sheet 27468.27* ar ors e n t Li ula g e R High-Current, Low-Dropout, 2.5 V Regulator Designed to meet the high-current requirements in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office equipment, the SI-3025ZF voltage regulator offers the


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    PDF SI-3025ZF SI-3025ZF 3025Z 02578 SC102 diode G746 SC102 SI-3025ZD SSJ-02578

    3phase MOSFET INVERTER

    Abstract: sla68 B105 CF35 G746 SC102 SMA6861M YG6260 INVERTER ALLEGRO 24 samsung flyback pin diagram
    Text: SMA6851M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating power supply Built-in protection circuit for controlling power supply


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    PDF SMA6851M 24-pin) SMA6851M 3phase MOSFET INVERTER sla68 B105 CF35 G746 SC102 SMA6861M YG6260 INVERTER ALLEGRO 24 samsung flyback pin diagram

    sma6863

    Abstract: sma6863m samsung electrolytic capacitor B105 CF35 G746 SC102 SMA6800M YG6260 F 2452 mosfet
    Text: SMA6863M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating


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    PDF SMA6863M 24-pin) SMA6863M sma6863 samsung electrolytic capacitor B105 CF35 G746 SC102 SMA6800M YG6260 F 2452 mosfet

    CF35

    Abstract: FM20 G746 SC102 TMA54S-L TMA56S-L YG6260 6562-9 samsung washing machine circuit diagram
    Text: TMA5x Series Triac Bidirectional Triode Thyristor Features and Benefits Description ▪ Exceptional reliability ▪ Small fully-molded SIP package with heatsink mounting for high thermal dissipation and long life ▪ VDRM of 400 or 600 V ▪ 5 ARMS on-state current


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    PDF E118037) O-220F) CF35 FM20 G746 SC102 TMA54S-L TMA56S-L YG6260 6562-9 samsung washing machine circuit diagram

    samsung flyback pin diagram

    Abstract: flyback samsung B105 CF35 G746 SC102 YG6260
    Text: SCM1101MF High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Each half-bridge circuit consists of a pre-driver circuit that is completely independent from the others ▪ Protection against simultaneous high- and low-side turning on ▪ Bootstrap diodes with series resistors for suppressing


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    PDF SCM1101MF samsung flyback pin diagram flyback samsung B105 CF35 G746 SC102 YG6260

    burglar alarm definition

    Abstract: B105 CF35 G746 SC102 SCM1104M YG6260 samsung electrolytic aluminum foil capacitor dc motor controller igbt
    Text: SCM1104M High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Each half-bridge circuit consists of a pre-driver circuit that is completely independent from the others ▪ Protection against simultaneous high- and low-side turning on ▪ Bootstrap diodes with series resistors for suppressing


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    PDF SCM1104M burglar alarm definition B105 CF35 G746 SC102 SCM1104M YG6260 samsung electrolytic aluminum foil capacitor dc motor controller igbt

    Untitled

    Abstract: No abstract text available
    Text: VRM = 600 V, IF AV = 60 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-6606S Preliminary Features Package The CTXS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.45


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    PDF CTXS-6606S CTXS-6606S O-247-3L CTXS-6606S-DS

    Untitled

    Abstract: No abstract text available
    Text: Dropper Type - Application Note •Heat Radiation and Reliability Fastening Torque The reliability of an IC is highly dependent on its operating temperature. Design should pay particular attention to ensuring ample space for radiating heat. Be sure to apply silicon grease to the IC before attaching a heatsink,


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    PDF SI-3000N SI-3001N SI-3002N SI-3000B SI-3000F SI-3000C SI-3000J SI-3000R SI-3000P SI-3000V

    Untitled

    Abstract: No abstract text available
    Text: Primary Side Regulation Off-Line PWM Controllers with Integrated Power MOSFET STR5A100D Series General Descriptions Package The STR5A100D series is power IC with primary side regulation for switching power supplies, incorporating a sense MOSFET and a current mode PWM controller IC.


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    PDF STR5A100D STR5A100D-DS

    Untitled

    Abstract: No abstract text available
    Text: VRM = 600 V, IF AV = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-6606S Preliminary Features Package The CTNS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15


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    PDF CTNS-6606S CTNS-6606S O-247-3L CTNS-6606S-DS

    CM75RL-12NF

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75RL-12NF HIGH POWER SWITCHING USE CM75RL-12NF ¡IC . 75A ¡VCES . 600V ¡Insulated Type ¡7-elements in a pack


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    PDF CM75RL-12NF CM75RL-12NF

    E80276

    Abstract: FM200TU-3A
    Text: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated


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    PDF FM200TU-3A E80276 E80271 E80276 FM200TU-3A

    CM150TL-24NF

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150TL-24NF HIGH POWER SWITCHING USE CM150TL-24NF ¡IC . 150A ¡VCES . 1200V ¡Insulated Type ¡6-elements in a pack


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    PDF CM150TL-24NF CM150TL-24NF

    "MOSFET Module"

    Abstract: E80276 FM400TU-07A 48V battery forklift
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated


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    PDF FM400TU-07A E80276 E80271 "MOSFET Module" E80276 FM400TU-07A 48V battery forklift

    G746

    Abstract: No abstract text available
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-006-G Date : 30th May 2001 Rev. date : 22th.Jun. 2010 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR


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    PDF AN-GEN-006-G G746

    TO-126LP

    Abstract: No abstract text available
    Text: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle


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    Untitled

    Abstract: No abstract text available
    Text: PF0030 Series MOS FET Power Amplifier • FEATURES • High Stability: Load VSWR = °° • Low Power Control Current: 400 fiA • Thin Package: 5mm ■ ORDERING INFORMATION P art No. Operating Frequency PF0030 824 to 849 M H z AMPS PF0032 872 to 905 M H z


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    PDF PF0030 PF0030 PF0032

    Untitled

    Abstract: No abstract text available
    Text: PF0040 Series MOS FET Power Amplifier • FEATURES • High Stability: Load VSWR = °° • Low Power Control Current: 400 /xA • Thin Pack ag e: 5 mmt ■ ORDERING INFORMATION Part No. Operating Frequency PF0040 824 to 849 MHz AMPS PFÜ042 872 to 905 MHz


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    PDF PF0040 PF0040