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    F30S Search Results

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    F30S Price and Stock

    3peak Incorporated TPR6040F30-S3TR-S

    IC VREF SHUNT 3V SOT23-3
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    DigiKey TPR6040F30-S3TR-S Reel 3,000 3,000
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    TPR6040F30-S3TR-S Digi-Reel 3,000 1
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    TPR6040F30-S3TR-S Cut Tape 3,000 1
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    • 10 $2.833
    • 100 $2.0321
    • 1000 $1.59657
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    Vishay Siliconix IRFBF30STRLPBF

    MOSFET N-CH 900V 3.6A TO263
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    DigiKey IRFBF30STRLPBF Cut Tape 1,600 1
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    IRFBF30STRLPBF Digi-Reel 1,600 1
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    IRFBF30STRLPBF Reel 800 800
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    Central Technologies CTWBF-3.0-S

    FERRITE BEAD 1.14K OHM RAD 1LN
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    DigiKey CTWBF-3.0-S Bulk 1,450 1
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    Vishay Siliconix SIHFBF30S-GE3

    MOSFET N-CHANNEL 900V
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    DigiKey SIHFBF30S-GE3 Cut Tape 921 1
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    Adam Technologies Inc ESMC-F-30-SGR-SMT-T-R

    CONN RCPT R/A SMT 30POS 1.27MM
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    DigiKey ESMC-F-30-SGR-SMT-T-R Reel 700 700
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    Find more F30S price and stock on Findchips.com

    F30S Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    F30S54 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    F30S54DC Fairchild Semiconductor Monolithic Serial Interface CMOS CODEC / Filter Original PDF
    F30S54DC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    F30S54DC Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    F30S57 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    F30S57DC Fairchild Semiconductor Monolithic Serial Interface CMOS CODEC / Filter Original PDF
    F30S57DC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    F30S57DC Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    F30S64 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    F30S64DC Fairchild Semiconductor Monolithic Serial Interface CMOS CODEC / Filter Original PDF
    F30S64DC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    F30S64DC Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    F30S67 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    F30S67DC Fairchild Semiconductor Monolithic Serial Interface CMOS CODEC / Filter Original PDF
    F30S67DC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    F30S67DC Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    F30S6P Shindengen Electric 60V 30A Power MOSFET Scan PDF

    F30S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FFH30S60S 30 A, 600 V STEALTH II Diode Features Description • Stealth Recovery, trr = 40 ns @ IF = 30 A • Max. Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II diode with soft recovery characteristics using silicon nitride passivated ion-implanted


    Original     		PDF FFH30S60S FFH30S60S

    F30S60S

    Abstract: FFP30S60S FFP30S60STU F30S60
    Text: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP30S60S FFP30S60S F30S60S FFP30S60STU F30S60

    F30S60S

    Abstract: avalanche diode 30A F30S60 30A Avalanche diode FFP30S60STU
    Text: FFP30S60S tm 30A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 40 ns @ IF = 30 A The FFP30S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as


    Original     		PDF FFP30S60S FFP30S60S O-220-2L F30S60S avalanche diode 30A F30S60 30A Avalanche diode FFP30S60STU

    F30S60S

    Abstract: FFH30S60S
    Text: FFH30S60S tm 30A, 600V, STEALTH II Diode Features • Stealth Recovery, Trr = 40 ns @ IF = 30 A • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted


    Original     		PDF FFH30S60S FFH30S60S O-247-2L F30S60S

    F30S60S

    Abstract: No abstract text available
    Text: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial


    Original     		PDF FFH30S60S FFH30S60S F30S60S

    Untitled

    Abstract: No abstract text available
    Text: FFH30S60S tm 30A, 600V STEALTH II Diode Features The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power


    Original     		PDF FFH30S60S FFH30S60S

    F30S60S

    Abstract: FFH30S60STU F30S60 FFH30S60S
    Text: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFH30S60S FFH30S60S F30S60S FFH30S60STU F30S60

    F30S60S

    Abstract: No abstract text available
    Text: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP30S60S FFP30S60S F30S60S

    F30SC3L

    Abstract: A27AM
    Text: Schottky Barrier Diode Twin Diode O U T L IN E D IM E N S IO N S F30SC3L Package I FTO -220 1 0 ±0.2 ^3.2-ai Unit • mm 2.7 ±a: (M Date code 30V 30A an ^3_ Type No. e ' i c 0181 v F30S(C3L M • T jl5 0 ° C Polarity • 1 £ V f = 0.45 V # Prrsm t j ^ y ' j i f f i l i


    OCR Scan     		PDF SF30SC3L 150tT 1V74m F30SC3L A27AM

    Untitled

    Abstract: No abstract text available
    Text: F30S54/F30S57 Monolithic Serial Interface CMOS CODEC/FILTER FA IR C HILD A Schlumberger Company Preliminary Advanced Signal Processing Division Description Connection Diagram Top View The F30S54, F30S57 family consists of fj-law and A-law monolithic PCM CODEC/FILTERS utilizing the A /D and


    OCR Scan     		PDF F30S54/F30S57 F30S54, F30S57 F3054 F3057

    F30S

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes High frequ e n cy rectifyin g A bsolute M axim um R atings Type No. D F30S C 3M L E lectrical C haracteristics Conditions If Ir m ax V r=V rm (typ) B jc (max) [V] [A] [mA] [pF] [°C/W ] 0.45 12.5 0.55 15 V rm lo Conditions Tc Ifsm


    OCR Scan     		PDF FTO-220 FTO-220 D10SBS4 D15XBS6 F30S

    k 2545 MOSFET

    Abstract: F30S6P 2SJ375
    Text: 6 0 V $ iU —X./V7—MOSFEX , 60V SERIES POWER MOSFET S ltlfl ¡ S ill O U T L IN E D IM E N S IO N S 2SJ375 Case : S T O -220 F30S6P 4.6 ±0.2 1.310.2- 10.2 ± 0.2 g y K iri^ (W ) Date code @ 48 J375 EIAJ No. 2,4 ±°-3 O.l^oi 3 Sri ©© Gate Drain


    OCR Scan     		PDF 60VvU-X F30S6P) STO-220 D002E34 k 2545 MOSFET F30S6P 2SJ375

    F30S60

    Abstract: No abstract text available
    Text: F30S64/F30S67 Monolithic Serial Interface CMOS CODEC/FILTER FA IR C H ILD A S chtum berger C om pany Preliminary Advanced Signal Processing Division Description Connection Diagram Top View The F30S64, F30S67 fam ily consists of /J-law and A-law m onolithic PCM C O D EC/FILTERS utilizing the A /D and


    OCR Scan     		PDF F30S64/F30S67 F30S64, F30S67 TP3064 TP3067 F30S54 F30S57, F30S64/F30S67 F30S60

    F3054

    Abstract: F3057 F30S54 F30S54DC F30S57 F30S57DC 14 PIN CERAMIC DIP FAIRCHILD Transformer VRK
    Text: F A I R C H F30S54/F30S57 I L D iv iu iiu iiu iiw A S chlum berger Com pany o b lia i in is iT a c c CMOS CODEC/FILTER Preliminary A dvanced Siqnal Processing Division Description Connection Diagram Top View The F30S54, F30S57 fam ily consists of /J-law and A-law


    OCR Scan     		PDF F30S54/F30S57 F30S54, F30S57 F3054 F3057 F30S54 F30S54DC F30S57DC 14 PIN CERAMIC DIP FAIRCHILD Transformer VRK

    F30S60

    Abstract: F30S54 F30S57 F30S64 F30S64DC F30S67 F30S67DC TP3064 TP3067
    Text: F A I R C H F30S64/F30S67 I L D M n Il Ii Ut hI I iUr I V InU nI I U A S chlum berger Com pany b Q oU rI iI ad ii II lnl l w t o l lrCf sl Vi or w o CMOS C O D EC /FILTER Preliminary Advanced Signal Processing Division Description Connection Diagram Top View


    OCR Scan     		PDF F30S64/F30S67 F30S64, F30S67 TP3064 TP3067 F30S54 F30S57, F30S60 F30S57 F30S64 F30S64DC F30S67DC

    3FS-4A

    Abstract: 3FS4A f10sc4 F30SC4 F30SC4M F15SC4M DF30SC4M F10SC4M
    Text: S u rfa ce-M o u n t D e v ic e s Sch ottk y Barrier D io d e s Single Electrical Charateristics Absolute M axim um Ratings |R irr 6j/ 0ja 0jc If s m T stg Ti (m ax) Conditions (m ax) (m ax) (m ax) (m ax) (m ax) If V r=Vrm [A] [°C ] [°C ] [V] [A] [mA]


    OCR Scan     		PDF F10PC3M F20SC3M F20PC3M F30SC3M F30PC3M STO-220 3FS-4A 3FS4A f10sc4 F30SC4 F30SC4M F15SC4M DF30SC4M F10SC4M

    f8l60

    Abstract: 1FS6 diodes chart F20SC4 5l60 10SC4M 2FS6 10sc6 3FS4A F10SC4
    Text: • ' _ 1 l> | - High Speed Rectifier Diodes Chart Ü AUT7 — K Type No. A xia l D iod es S in g le D iodes & Tw in D iodes S u r f a c e Mounting D e v ic e s M odules 2 D1NS4 D1N S6 D2S4M D2S6.M S2S6M D 3S4M D3S6.M S3S6M D 4 SC 6M S5S4M D 5S4M D 5S6M D 5S9M


    OCR Scan     		PDF S10SC4M D10SC4M 10SC6M D10SD6M S15SC4M D30SC4M S60SC S60SC4M F10SC4M F15SC4M f8l60 1FS6 diodes chart F20SC4 5l60 10SC4M 2FS6 10sc6 3FS4A F10SC4

    F20SC4

    Abstract: F20SC4M df40sc4 E10-P f10sc4 1fp3
    Text: ^ lì S c h o ttk y B a rrie r Diodes Single Absolute Maximum Ratings V rm lo Conditions Tc Ifsm Tstg Tj [V] [A] [*c] [A] rc ] [°c] [V] - 5 5 - 150 150 -55 150 150 - 4 0 - 150 150 150 D1FS4 40 S I* 30 6 60 25 * 40 D2FS4 40 1.6 34* 6 60 1.5 3 1* D E3S4M


    OCR Scan     		PDF Fig72 STO-220 STO-220 F20SC4 F20SC4M df40sc4 E10-P f10sc4 1fp3

    Untitled

    Abstract: No abstract text available
    Text: 6 0 Vi/'J-X /t7—MOSFET 60V SERIES POWER MOSFET WF2\|->£I2] O U T L IN E D IM E N S IO N S 2SK2288 F 3 0 S 6 N 60v 30a • R A T IN G S A b s o lu te Maxim um R a tin g s Id n S ym b ol a js Item S to ra g e T e m perature £ f* C onditions m 11 * ts


    OCR Scan     		PDF 2SK2288 10/js, F30S6N)

    F30SC4

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Twin Diode Wtm F30SC4 Date code Feature • 7 [ Æ - J U K • l Ë S I f f i 2kV S Ï I 4.5 ' Control No. • Tj=150°C • P rrsm Rating • Full Molded • High lo Rating-Small-RKG • Dielectric Strength 2kV • P R R S M T ’A ' ^ V Ì ' I ' K i E


    OCR Scan     		PDF SF30SC4 F30SC4 Tc-10 F30SC4

    j372

    Abstract: No abstract text available
    Text: RATINGS æ tt-K £ Cl nn T c = 25“C E le c tr ic a l C h a r a c te r is tic s Absolute Maximum Ratings £ Tch V dss Vg ss Id P t DC EIA J No. Type No. 2SK 2279 2SK 2280 [V ] [V ] 2SK2283 2SK2284 2SK2285 2SK 2286 2SK 2287 2SK2288 2SK 2289 2SK2290 T c = 25°C


    OCR Scan     		PDF 2SK2281 2SK2282 2SK2283 2SK2284 2SK2285 2SK2288 2SK2290 2SK2291 2SJ371 SJ373 j372

    F10SC

    Abstract: 3fs6
    Text: Surface-M ount Devices E-pack Schottky Barrier Diodes Single A b solute M axim um Ratings V rm lo [V ] [A ] I fsm Tstg Tj (m ax) Conditions (m ax) If V r ~ V rm [A ] PC] [°C ] [V ] [A ] [m A ] 40 40 6 60 51« 2 5*2 D2FS4 40 1.6 3 4 *2 6 60 1.5 3 1 *2 3


    OCR Scan     		PDF E10SC F10SC DF15SC DF20SC DF25SC F30SC F40SC 3fs6

    5SC3

    Abstract: No abstract text available
    Text: S c h o ttk y B a rrie r Diodes Single M1F Absolute Maximum Ratings Type No. Electrical Characteristics V rm lo Conditions Ta I fsm Tstg Tj Vf (max) [V ] [A ] [•c] [A ] [•c] C*c] [V ] 5I 25 34 30 —55— 150 150 D 1FS4 40 6 60 D2FS4 40 6 60 DE3S4M 40


    OCR Scan     		PDF Fig72 STO-220 5SC3

    DIODE SMD 6M

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings T ype No. V rm lo Conditions [V ] [A ] [•G] I fsm Electrical Characteristics Tstg T| PC] Vf max Tc 30 30 4 40 *D F 4 0 S C 3 L 30 * 40 4 S60SC3M L 30 30 40 40 0M 60 : -5 5 -1 2 5 97 300 III 350 102 300 1 12 400 106 350 126 60 150


    OCR Scan     		PDF F30SC F30PC D120SC3M D180SC3M 0240SC3M D360SC3M DIODE SMD 6M