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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Single P-channel MOSFET ELM323506A-S •General description ■Features ELM323506A-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-60V Id=-26A Rds(on) < 35mΩ (Vgs=-10V) Rds(on) < 55mΩ (Vgs=-7V)	Original	PDF	ELM323506A-S ELM323506A-S
Untitled Abstract: No abstract text available Text: シングル P チャンネル MOSFET ELM323506A-S •概要 ■特長 ELM323506A-S は低入力容量低電圧駆動、低・ Vds=-60V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=-26A ・ Rds on < 35mΩ (Vgs=-10V) ・ Rds(on) < 55mΩ (Vgs=-7V)	Original	PDF	ELM323506A-S
ELM323506A Abstract: No abstract text available Text: 单 P 沟道 MOSFET ELM323506A-S •概要 ■特点 ELM323506A-S 是 P 沟道低输入电容，低工作电压，低导通电阻的大电流 MOSFET。 •Vds=-60V ·Id=-26A ·Rds on < 35mΩ (Vgs=-10V) ·Rds(on) < 55mΩ (Vgs=-7V) ■绝对最大额定值	Original	PDF	ELM323506A-S ELM323506A
Untitled Abstract: No abstract text available Text: Single P-channel MOSFET ELM323506A-S •General description ■Features ELM323506A-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-60V Id=-26A Rds(on) < 35mΩ (Vgs=-10V) Rds(on) < 55mΩ (Vgs=-7V)	Original	PDF	ELM323506A-S ELM323506A-S