10MQ060
Abstract: 10MQ060N AN-994
Text: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-219-75 10MQ060N sch diodSMA PD-20519 rev. D 11/99 10MQ060N 2.1 Amp SCHOTTKY RECTIFIER SMA Description/Features
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10MQ060N
PD-20519
10MQ060N
10MQ060
AN-994
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10MQ040
Abstract: 10MQ040N 10MQ040TR AN-994
Text: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-219-67 10MQ040N sch diodSMA PD-20518 rev. D 11/99 10MQ040N SCHOTTKY RECTIFIER 2.1 Amp SMA Major Ratings and Characteristics
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10MQ040N
PD-20518
10MQ040N
10MQ040
10MQ040TR
AN-994
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10BQ100
Abstract: No abstract text available
Text: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-217-44 10BQ100 sch diodSMB PD - 2.437A 10BQ100 SCHOTTKY RECTIFIER 1 Amp Major Ratings and Characteristics
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10BQ100
10BQ100
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10BQ030
Abstract: 10BQ040 10BQ040TR AN-994
Text: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-217-10 10BQ030 sch diodSMB PD-20708 rev. A 01/2000 10BQ030 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics
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10BQ030
PD-20708
10BQ030
10BQ040
10BQ040TR
AN-994
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Untitled
Abstract: No abstract text available
Text: Product specification 1N4150W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 Features +0.1 1.6-0.1 Silicon Epitaxial Planar Diode Fast general purpose and switching. +0.1 3.7-0.1 This diods is also available in other case styles including: the DO-35 case with the type designation 1N4150 and
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1N4150W
OD-123
DO-35
1N4150
LL4150.
200mA
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10BQ040
Abstract: No abstract text available
Text: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-217-28 10BQ040 sch diodSMB PD - 2.397A 10BQ040 SCHOTTKY RECTIFIER 1 Amp Major Ratings and Characteristics
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10BQ040
10BQ040
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30BQ015
Abstract: 30BQ015TR AN-994
Text: 2002-02-18 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-229-40 30BQ015 sch diodSMC Bulletin PD-2.490 rev. A 05/00 30BQ015 SCHOTTKY RECTIFIER 3 Amp SMC Major Ratings and Characteristics
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30BQ015
30BQ015
30BQ015TR
AN-994
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Untitled
Abstract: No abstract text available
Text: Product specification 1N4151W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Silicon Epitaxial Planar Diode +0.1 3.7-0.1 Fast switching diods. This diods is also available in other case styles including: 0.50 0.1max 0.35
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1N4151W
OD-123
OD-123
1N4151W
LL4151.
100MHz,
D-123)
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10MQ100
Abstract: 10MQ100N AN-994
Text: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-219-83 10MQ100N sch diodSMA PD-20520 rev. D 11/99 10MQ100N SCHOTTKY RECTIFIER 2.1 Amp SMA Description/Features
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10MQ100N
PD-20520
10MQ100N
10MQ100
AN-994
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10BQ060
Abstract: No abstract text available
Text: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-217-36 10BQ060 sch diodSMB PD - 2.438A 10BQ060 SCHOTTKY RECTIFIER 1 Amp Major Ratings and Characteristics
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10BQ060
10BQ060
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10BQ015
Abstract: No abstract text available
Text: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-217-02 10BQ015 sch diodSMB PD - 2.396A 10BQ015 SCHOTTKY RECTIFIER 1 Amp Major Ratings and Characteristics
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10BQ015
10BQ015
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15MQ040
Abstract: 15MQ040N 15MQ040TR
Text: 2002-02-01 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-223-04 15MQ040N sch diodSMA Preliminary Data Sheet PD-20517 rev. C 03/99 15MQ040N 3 Amp SCHOTTKY RECTIFIER
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15MQ040N
PD-20517
15MQ040N
15MQ040
15MQ040TR
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MELF SMD
Abstract: 1N4150W 1N4150 LL4150 LL4150 SMD
Text: Diodes SMD Type SMALL SIGNAL DIODES 1N4150W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 Features +0.1 1.6-0.1 Silicon Epitaxial Planar Diode Fast general purpose and switching. +0.1 3.7-0.1 This diods is also available in other case styles including:
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1N4150W
OD-123
DO-35
1N4150
LL4150.
200mA
MELF SMD
1N4150W
LL4150
LL4150 SMD
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diods
Abstract: smd 123 smd diode Sod-123 smd transistor 123 1N4151W LL4151
Text: Diodes SMD Type SMALL SIGNAL DIODES 1N4151W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Silicon Epitaxial Planar Diode +0.1 3.7-0.1 Fast switching diods. This diods is also available in other case styles including: 0.50
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1N4151W
OD-123
OD-123
1N4151W
LL4151.
100MHz,
D-123)
diods
smd 123
smd diode Sod-123
smd transistor 123
LL4151
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smd diode marking a6
Abstract: smd diode a6 DIODE SMD A6 SMD a6 Transistor SMD DIODE A6 t smd transistor A6 SMD A6 smd transistor A6 datasheet DIODE smd marking A6 BAS216
Text: Diodes SMD Type HIGH-SPEED SWITCHING DIODE BAS216 SOD110 Unit: mm Features Small ceramic SMD package High switching speed:max. 4 ns Continuous reverse voltage:max.75V Repetitive peak reverse voltage:max.85V cathode idenfifier Repetitive peak forward current:max. 500 mA.
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BAS216
OD110
smd diode marking a6
smd diode a6
DIODE SMD A6
SMD a6 Transistor
SMD DIODE A6 t
smd transistor A6
SMD A6
smd transistor A6 datasheet
DIODE smd marking A6
BAS216
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Untitled
Abstract: No abstract text available
Text: Surface Mount Bias-Tees Wideband 10 to 4200 MHz Features Maximum Ratings Operating Temperature -40°C to 85°C Storage Temperature JEBT-4R2G • wideband, 10 to 4200 MHz • low insertion loss, 0.6 dB typ. • good isolation, 40 dB typ. -55°C to 100°C RF Power
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30dBm
500mA
BL301
150mA
M97928
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Untitled
Abstract: No abstract text available
Text: Surface Mount JEBT-4R2G+ JEBT-4R2G Bias-Tee Wideband 10 to 4200 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature RF Power 30dBm max. Voltage at DC port 500mA • • • • DC resistance from DC to RF&DC port 4.5 ohm typ.
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30dBm
500mA
BL301
2002/95/EC)
100mA
200mA
M98898
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Untitled
Abstract: No abstract text available
Text: Product specification 1PS79SB62 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Ultra high switching speed + +0.1 0.6-0.1 - Very low capacitance High breakdown voltage +0.1 1.6-0.1 0.77max Guard ring protected +0.05 0.1-0.02 0.07max Ultra small plastic SMD package.
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1PS79SB62
OD-523
77max
07max
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Untitled
Abstract: No abstract text available
Text: Product specification 1PS79SB70 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Low forward voltage + +0.1 0.6-0.1 - High breakdown voltage Guard ring protected +0.1 1.6-0.1 0.77max Ultra small plastic SMD package. +0.05 0.1-0.02 0.07max
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1PS79SB70
OD-523
77max
07max
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diode T-71
Abstract: ESJA57-04A
Text: 1. SCOPE This specification provide the-ratings and the requirements for high voltage silicon diode ESJA57-04A made by FUJI ELECTRIC CO. .LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENT FtCAT 1ON The diods shall be marked with Cathode Mark and Lot No.
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ESJA57-04A
E53fl7TS
ESJA57-CE1A
H53fi7TE
diode T-71
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SR1FM
Abstract: SR1FM-2
Text: MITSUBISHI SILICON RECTIFIER DIODS SRI FM LOW POWER, GENERAL USE LEÁD-MOUNTED TYPE DESCRIPTIO N Dim ension: mm O U T L IN E D R A W IN G The Mitsubishi type SR1FM silicon rectifier diodes SR 1FM -2~S R 1FM -20 are a plastic modification of the diffused junction type rectifier element.
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HIGH VOLTAGE DIODE 12kv
Abstract: ESJA52-12A
Text: SPECIFICATION Device Name_ : High Voltage Si Iicon Diods T vpg Name_; E S J A 5 2 ^ 1 2 A _ No._ :_;_ tlil« m nUrial arid the tnformiiUon har«ln |k ih* pro|>firty of Fuji Eltctilc C o.,ltd. Th*y *hid1 b* r«l|h«r reptcKlucsd, çoplitd.
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ESJA52
0DDti21Ã
H04-004-07
ESJA52-12A
EE367S2
ESJA52-QUA
HIGH VOLTAGE DIODE 12kv
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T-045
Abstract: No abstract text available
Text: P H ILIPS Id A C 2 1 DIODE-TRIODE for use as A.?, amplifier DIODE-TRIODE pour l'utilisation en amplificatrice D.F. DIODS-TRIODE zur Verwendung als N.F.Verstärker Heating: direct by D.C.; series or parallel supply Chauffage: direct par G.C.; alimentation en série ou
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max36
DAC21
T-045
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MMW4
Abstract: F5023
Text: p w tT "iltf T l* f C a ll it p aM h*' W t N 11 , M • * prtptrly pi r tp w lM M , «or «M 1w Q« iw iv lM t u ito g b a n a l« » irtO « u l lM>. « «Hc4mM li 4M xr; «tfi«1ú*Vii P9T lNr ü>r oí • »? 0 *<lifc F < |l Tib N*Urf>l i»a ih» lnror#iaiiaa
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MS5F443Ã
MM-W4-07
MS5F4431
S5F443I
MMW4
F5023
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