DIM200PHM33-F000
Abstract: No abstract text available
Text: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module PDS5606-2.1 June 2003 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS ■ High Reliability Inverters
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DIM200PHM33-F000
PDS5606-2
DIM200PHM33-F000
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DIM200PHM33-F000
Abstract: DIM200PHM33-F
Text: DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 LN28814 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
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DIM200PHM33-F000
DS5606-4
DS5606-5
LN28814)
DIM200PHM33-F000
DIM200PHM33-F
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DIM200PHM33-A000
Abstract: tc 2608
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces May 2002, version DS5464-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS
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DIM200PHM33-A000
DS5464-5
DS5464-6
DIM200PHM33-A000
tc 2608
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Untitled
Abstract: No abstract text available
Text: DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 LN28814 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
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DIM200PHM33-F000
DS5606-4
DS5606-5
LN28814)
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DIM200PHM33-F000
Abstract: No abstract text available
Text: DIM200PHM33-F000 Half Bridge IGBT Module DS5606-3.3 AUGUST 2008 LN26304 FEATURES Isolated MMC Base plate with AIN Substrate KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * Soft Punch Through Silicon 10µs Short Circuit Withstand
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DIM200PHM33-F000
DS5606-3
LN26304)
DIM200PHM33-F000
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bi-directional switches IGBT
Abstract: H BRIDGE inverters circuit diagram using igbt inverter power 12v dc to 220 dc circuit diagram 125 diode Material Handling Systems power recovery diode DIM200PHM33-A000
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces June 2002, version DS5464-6.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS
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DIM200PHM33-A000
DS5464-6
DIM200PHM33-A000
bi-directional switches IGBT
H BRIDGE inverters circuit diagram using igbt
inverter power 12v dc to 220 dc circuit diagram
125 diode
Material Handling Systems
power recovery diode
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DIM200PHM33-A000
Abstract: No abstract text available
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces October 2001, version DS5464-4.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS
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DIM200PHM33-A000
DS5464-4
DS5464-5
DIM200PHM33-A000
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nh 2608
Abstract: bi-directional switches IGBT DIM200PHM33-A000
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces November 2002, version DS5464-6.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS
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DIM200PHM33-A000
DS5464-6
DS5464-7
DIM200PHM33-A000
nh 2608
bi-directional switches IGBT
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bi-directional switches IGBT
Abstract: DIM200PHM33-A000
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces November 2002, version DS5464-6.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS
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DIM200PHM33-A000
DS5464-6
DS5464-7
DIM200PHM33-A000
bi-directional switches IGBT
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Untitled
Abstract: No abstract text available
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces November 2002, version DS5464-6.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS
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DIM200PHM33-A000
DS5464-6
DS5464-7
DIM200PHM33-A000
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DIM200PHM33-F000
Abstract: No abstract text available
Text: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module Replaces June 2003 version, issue PDS5606-2.1 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability
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DIM200PHM33-F000
PDS5606-2
PDS5606-3
DIM200PHM33-F000
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DIM200PHM33-F000
Abstract: ge traction motor DS5606-1
Text: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module Preliminary Information DS5606-1.2 June 2003 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS
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DIM200PHM33-F000
DS5606-1
DIM200PHM33-F000
ge traction motor
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DIM200PHM33-A000
Abstract: No abstract text available
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Preliminary Information Replaces August 2001, version DS5464-3.0 FEATURES DS5464-4.0 October 2001 KEY PARAMETERS • 10µs Short Circuit Withstand VCES ■ High Thermal Cycling Capability VCE sat (typ)
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DIM200PHM33-A000
DS5464-3
DS5464-4
DIM200PHM33-A000
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Untitled
Abstract: No abstract text available
Text: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module DS5606-3.2 June 2008 LN26118 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS ■
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DIM200PHM33-F000
DS5606-3
LN26118)
DIM200PHM33-F000
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches
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4500Vee
DS5766-4.
DCR370T
DCR370T18
DCR1560F26
DCR1560F
drd2960y40
alsic 105
DCR1710F18
DCR650G34
DCR2760V
DRD850D34
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DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
K1457
Tag 225-600
dim1200fss12
thyratron
IGBT cross-reference
DCR890F
DSF110
igbt types 6000v
DIM800DCS12-A
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IGBT cross reference semikron eupec
Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130
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DS5468
DS5468-2
FZ1200R33KF2
140x190
DIM1200ESM33
FZ1600R12KF4
140x130
DIM1600FSM12
FF400R12KF4
IGBT cross reference semikron eupec
150Ne120
FZ800R16KF4
MG200J2YS50 mitsubishi
IGBT cross reference semikron
Eupec Power Semiconductors
IGBT mitsubishi mg300j2ys50
MBM200GS12
FZ1600R12KF4
MG200Q2YS40
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IGBT cross reference semikron eupec
Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130
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DS5468
DS5468-2
FZ1200R33KF2
140x190
DIM1200ESM33
FZ1600R12KF4
140x130
DIM1600FSM12
FF400R12KF4
IGBT cross reference semikron eupec
IGBT cross reference semikron
2MBI 200NB-120 IGBT
Eupec
150Ne120
MG200J2YS50 mitsubishi
MG100Q2YS51
MG400Q1US41 igbt mitsubishi
FZ800R16KF4
MG200Q2YS40
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2sd315ai
Abstract: 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers
Text: AN 5946 Driving Dynex High Power IGBT modules with Concept Gate Drives Application Note AN5946-2.0 September 2009 LN26854 Author: Dinesh Chamund Introduction Dynex Semiconductor manufactures a variety of IGBT modules ranging from 1200V to 6500V and 100A to 2400A.
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AN5946-2
LN26854
2sd315ai
2sc0108t
bi-directional switch IGBT driver
2SC0435T
2SD106AI
2SD106Ai-17
2sc0108
2sc0435
CT-Concept
igbt trafo drivers
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DCR2950W
Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
igbt types 6000v
igbt sinewave inverter
thyristor phase control 600v to 1600v
DCR2630Y
Tag 225-600
PT85QWX45
HVDC plus
bi-directional switches IGBT
GTO hvdc thyristor
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MP02X
Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
Text: a lp h a n u m e r ic p a r t lis t Part No. ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA DCR1375SBA DCR1376SBA DCR1474SY DCR1475SY DCR1476SY DCR1478SY DCR1574SY DCR1575SY DCR1576SY DCR1594SW DCR1595SW DCR1596SW
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OCR Scan
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ACR300SG
ACR400SE
ACR44U
DCR1002SF
DCR1003SF
DCR1006SF
DCR1008SF
DCR1020SF
DCR1021SF
DCR1374SBA
MP02X
DCR10
DYNEX
DG648
DCR1596SW
DIM200PHM33
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108X62
Abstract: No abstract text available
Text: powerline igbt modules IG B T M o d u le s Generic Part Number Voltage Grade Current Rating Circuit Type VcES V 'c (A) @ T case CQ Max. Saturation Current Voltage VCE(SAT) Rating (Typical) «CM (A) (V) Total Switching Energy Isolation Voltage (mJ) v« (kV)
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GP250MHB06S
GP350MHB06S
GP500LSS06S
GP200MHS12
GP200MKS12
GP200MLS12
DIM400DDM12
DIM400LSS12
DIM800DDM12
DIM800FSM12
108X62
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