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    Motorola Semiconductor Products MMDF2C02HDR2

    COMPLEMENTARY TMOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA MMDF2C02HDR2 6,450
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    Text: MOTOROLA O rder this docum ent by M M DF2C02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs


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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by DF2C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products M o to ro la P re ferre d D e vic e C om plem entary TMOS Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs


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    M7 DIODE POLARITY

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet DF2C02HD Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process.


    OCR Scan     		PDF MMDF2C02HD management130 DF2C02H M7 DIODE POLARITY