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    C612 Search Results

    C612 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6123(0)-Z-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    TLV320ADC6120IRTER Texas Instruments Stereo-channel, 768-kHz, Burr-Brown™ audio analog-to-digital converter (ADC) with 123-dB SNR 20-WQFN -40 to 125 Visit Texas Instruments
    SF Impression Pixel

    C612 Price and Stock

    Torex Semiconductor LTD XC6127N42ANR-G

    IC SUPERVISOR 1 CHANNEL SSOT24
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    DigiKey XC6127N42ANR-G Cut Tape 2,850 1
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    XC6127N42ANR-G Digi-Reel 2,850 1
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    Torex Semiconductor LTD XC6120C182HR-G

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    Torex Semiconductor LTD XC6120N152HR-G

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    Torex Semiconductor LTD XC6122E628ER-G

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    DigiKey XC6122E628ER-G Digi-Reel 100 1
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    XC6122E628ER-G Cut Tape 100 1
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    Avnet Silica XC6122E628ER-G 17 Weeks 3,000
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    Chip1Stop XC6122E628ER-G Cut Tape 200
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    Torex Semiconductor LTD XC6127C26DNR-G

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    Chip1Stop XC6127C26DNR-G Cut Tape 2,976
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    C612 Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C612 General Electric Semiconductor Data Handbook 1977 Scan PDF
    C612 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    C612 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    C612 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    C612 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    C612 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    C61200JSL2 BI Technologies Capacitor: Ceramic: 20PF: 25: SL Original PDF
    C61200JSL5 BI Technologies Capacitor: Ceramic: 20PF: 50: SL Original PDF
    C61200KSL1 BI Technologies Capacitor: Ceramic: 20PF: 100: SL: Original PDF
    C61200KSL2 BI Technologies Capacitor: Ceramic: 20PF: 25: SL: Original PDF
    C61200KSL5 BI Technologies Capacitor: Ceramic: 20PF: 50: SL: Original PDF
    C61200MSL1 BI Technologies Capacitor: Ceramic: 20PF: 100: SL: Original PDF
    C61200ZSL1 BI Technologies Capacitor: Ceramic: 20PF: 100: SL: -20% to Original PDF
    C6120A.41.10 General Cable Multiple Conductor Cables, Cables, Wires, 5P/18 16/30TC UNSH TYPE CM Original PDF
    C612L General Electric Semiconductor Data Handbook 1977 Scan PDF
    C612L Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    C612L Richardson Electronics Inverter Silicon Controlled Rectifiers Scan PDF
    C612L Silicon Power Thyristor, Thyristor, 2000V Forward Blocking Voltage Scan PDF
    C612L Silicon Power 40 mm Inverter Thyristor Scan PDF
    C612PC Richardson Electronics 1.3kV V[drm] Max., 1.2kA I[T] Max. Silicon Controlled Rectifier Scan PDF

    C612 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    photovoltaic sensor

    Abstract: PDB-V612-1 photoconductive 110 photovoltaic PDB-C612 photoconductive light sensor PHOTOVOLTAIC CELL PDB-C612-1 PDB-C612-2 PDB-C612-3
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C612 Photovoltaic Type PDB-V612 DETECTORS INC. PACKAGE DIMENSIONS INCH mm 0.700 [17.78] 0.700 [17.78] 0.700 [17.78] 6.25 [158.7] 1.00 [25.4] 0.035 [0.89] 0.200 [5.08] 0.200 [5.08]


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    PDF PDB-C612 PDB-V612 PDB-C612-2 PDB-V612-2 PDB-C612-3 PDB-V612-3 SC612 PDB-C612-1 PDB-V612-1 100-PDB-C612-V612 photovoltaic sensor PDB-V612-1 photoconductive 110 photovoltaic photoconductive light sensor PHOTOVOLTAIC CELL PDB-C612-1 PDB-C612-2 PDB-C612-3

    Untitled

    Abstract: No abstract text available
    Text: Solderable Silicon Photodiodes PDB-C612-2 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ± .050 [1.27] 2X 6.25 [158.7] 2X .250 [6.35] 2X TINNED RED 30 AWG PVC WIRE, ANODE BLACK 30 AWG PVC WIRE, CATHODE .021 [0.53] .014 [0.36] CHIP DIMENSIONS INCH [mm]


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    PDF PDB-C612-2 PDB-C612-2

    PDB-C612

    Abstract: PDB-C612-2 5v810
    Text: Solderable Silicon Photodiodes PDB-C612-2 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ± .050 [1.27] 2X 6.25 [158.7] 2X .250 [6.35] 2X TINNED RED 30 AWG PVC WIRE, ANODE BLACK 30 AWG PVC WIRE, CATHODE .021 [0.53] .014 [0.36] CHIP DIMENSIONS INCH [mm]


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    PDF PDB-C612-2 PDB-C612-2 PDB-C612 5v810

    Pw380us

    Abstract: transistor c 1923 TIP42C TIP42CE3
    Text: Spec. No. : C612E3 Issued Date : 2004.07.14 CYStech Electronics Corp. Revised Date : Page No. : 1/4 6A PNP Epitaxial Planar Power Transistor TIP42CE3 Description TIP42CE3 is designed for use in general purpose amplifier and switching applications. Features


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    PDF C612E3 TIP42CE3 TIP42CE3 -100V -500mA O-220AB UL94V-0 Pw380us transistor c 1923 TIP42C

    C6118A

    Abstract: C6121 ul 2464 C6118 ul 2464 cable ul2464
    Text: Electronics Communication & Control Cable, Multi-Paired Multi-Paired, Unshielded UL 2464, NEC Type CM UL c(UL), CSA CMG Product Construction: Conductor: • 18 AWG fully annealed stranded tinned copper per ASTM B-33 • Twisted pairs Insulation: • Premium-grade, coIor-coded S-R PVC


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    PDF C-2464 2002/95/EC C6118A C6121 ul 2464 C6118 ul 2464 cable ul2464

    r727

    Abstract: No abstract text available
    Text: User's Guide SLLU180 – June 2013 TLK10232 Dual-Channel XAUI/10GBASE-KR Transceiver with Crosspoint Evaluation Module EVM Graphical Users Interface User’s Guide This user’s guide describes the usage and construction of the TLK10232 evaluation module (EVM). This


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    PDF SLLU180 TLK10232 XAUI/10GBASE-KR r727

    smd diode c331

    Abstract: smd diode c329 smd diode c328 smd diode C616 CR0402-16W-1000FPT r0201 res murata SAMTECTSW10608GS3PIN 0402 lin res smd diode C618 ST C619
    Text: Evaluation Board User Guide UG-290 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD9434 and AD9484 Analog-to-Digital Converters FEATURES Full featured evaluation board for the AD9434 and AD9484


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    PDF UG-290 AD9434 AD9484 AD9517 AN-905 AN-878 AN-877 UG09910-0-7/11 smd diode c331 smd diode c329 smd diode c328 smd diode C616 CR0402-16W-1000FPT r0201 res murata SAMTECTSW10608GS3PIN 0402 lin res smd diode C618 ST C619

    J239

    Abstract: HS6237 CP9035 vampower 8 vampower j246 D880 C6250 CP9030 J241
    Text: Betriebsanleitung für Beckhoff CP-Link Karten CP9030 / CP9035 Version: 1.5 Datum: 05.10.2009 Allgemeine Hinweise Inhaltsverzeichnis 1. Allgemeine Hinweise 5 2. Beckhoff CP-Link Systembeschreibung 6 Hinweise zur Dokumentation Haftungsbedingungen Erklärung der Sicherheitssymbole


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    PDF CP9030 CP9035 CP9030 HS6237 686LCD CP3030 J239 CP9035 vampower 8 vampower j246 D880 C6250 J241

    CX9010-N031

    Abstract: Beckhoff Ek1100 ES3004 bc515 hengstler 890 IL2301bxxx Fisher ROC 107 modbus CU2508 KL2541 HEIDENHAIN EnDat 2.1
    Text: BECKHOFF New Automation Technology Ürünlere Genel Bakış Endüstriyel PC Gömülü PC Lightbus I/O Terminalleri Fieldbus Kutusu Sürücü Teknolojisi PC-Fieldbus kartları, Ağ anahtarları 2 Automation Motion I/O IPC Beckhoff Ürünlerine Genel Bakış | Bu katalog, Endüstriyel bilgisayarlar, saha haberleşmesi, sürücü teknolojileri, otomasyon yazılımları


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    PDF DK1409-0808 CX9010-N031 Beckhoff Ek1100 ES3004 bc515 hengstler 890 IL2301bxxx Fisher ROC 107 modbus CU2508 KL2541 HEIDENHAIN EnDat 2.1

    SAMSUNG 0805 thick film resistor

    Abstract: SAMSUNG DATASHEET CHIP CAPACITOR Samsung Capacitor 0805 capacitors samsung IRF7821 soic8 irf7832 chip resistor R10 Thick Film Chip Resistor Network SAMSUNG capacitors SM1206 DATASHEET
    Text: ISL88550AEVAL1Z Kit: Synchronous Step Down Controller with Sourcing and Sinking LDO Regulator Application Note July 23, 2008 General Description Features ISL88550A integrates a synchronous buck PWM controller to generate VDDQ, a sourcing and sinking LDO linear


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    PDF ISL88550AEVAL1Z ISL88550A AN1200 SAMSUNG 0805 thick film resistor SAMSUNG DATASHEET CHIP CAPACITOR Samsung Capacitor 0805 capacitors samsung IRF7821 soic8 irf7832 chip resistor R10 Thick Film Chip Resistor Network SAMSUNG capacitors SM1206 DATASHEET

    transistor C9012

    Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
    Text: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 Quvyvƒ†ÃTr€ vp‚qˆp‡‚…† The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.


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    PDF GTV1000 AN98051 GTV1000 TDA884X C9029 220uF C6004 transistor C9012 transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015

    smd diode c644

    Abstract: diode c649 smd diode c548 C748 SMC transistor C734 smd diode c549 C706 diode c624 DIODE smd diode C645 diode c741
    Text: Octal, 12-Bit, 40/50 MSPS Serial LVDS 1.8 V A/D Converter AD9222 8 ADCs integrated into 1 package 93 mW ADC power per channel at 50 MSPS SNR = 70 dB to Nyquist ENOB = 11.3 bits SFDR = 84 dBc Excellent linearity DNL = ±0.3 LSB (typical) INL = ±0.4 LSB (typical)


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    PDF 12-Bit, AD9222 ANSI-644, AD9222BCPZ-40 AD9222BCPZRL7-401 AD9222BCPZ-501 AD9222BCPZRL7-501 AD9222-50EBZ 64-Lead smd diode c644 diode c649 smd diode c548 C748 SMC transistor C734 smd diode c549 C706 diode c624 DIODE smd diode C645 diode c741

    c606 Schottky diode

    Abstract: avago bar code on the box smd diode c644
    Text: Octal, 14-Bit, 50 MSPS, Serial LVDS, 1.8 V ADC AD9252 8 analog-to-digital converters ADCs integrated into 1 package 93.5 mW ADC power per channel at 50 MSPS SNR = 73 dB (to Nyquist) ENOB = 12 bits SFDR = 84 dBc (to Nyquist) Excellent linearity DNL = ±0.4 LSB (typical); INL = ±1.5 LSB (typical)


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    PDF 14-Bit, AD9252 ANSI-644, MO-220-VMMD-4 64-Lead CP-64-3) AD9252BCPZ-50 AD9252BCPZRL7-501 AD9252-50EBZ1 c606 Schottky diode avago bar code on the box smd diode c644

    NV18

    Abstract: isl6247 transistor SMD w26 Socket AM2 Compal Electronics SMD SOT23 A53 rt8101l p25 BTQ00 RTL8101L compal
    Text: A B C D E 1 2 1 BTQ00 Rev1.0 Schematics Document 2 Intel Prescott uFCPGA-478 / P4 Northwood with Springdale / ICH5 / nVIDIA NV18/34/31M chipset 2003/05/15 3 3 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


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    PDF BTQ00 uFCPGA-478 NV18/34/31M LA-1841 PR113 NV18 isl6247 transistor SMD w26 Socket AM2 Compal Electronics SMD SOT23 A53 rt8101l p25 BTQ00 RTL8101L compal

    GE C712 thyristor

    Abstract: GE C712 scr c712l C712L c712l thyristor SCR 400V 1000A SCR C712 SCR C648 GE thyristor scr SCR C612
    Text: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE


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    PDF 488BHIIMIÃ GE C712 thyristor GE C712 scr c712l C712L c712l thyristor SCR 400V 1000A SCR C712 SCR C648 GE thyristor scr SCR C612

    RS 302 440 40

    Abstract: C612 C612L C612PE C612PM C612PN C612PS C612PT C613L C613PT
    Text: High Speed Silicon Controlled Rectifier 2000 Volts C612 1150 Amps RMS a m p l if y in g g a t e The General Electric device type C612 is a new pressure m ounted, high current SCR designed for power switching at high voltage and high frequen­ cies up to 5 KHz . The C612 gate structure has an involute, rnterdigitated


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    C712L

    Abstract: TO200AC C648PB c712pd C612L c712pn C713 C612 C613 C648E
    Text: INVERTER SCRs RICHARDSON/ NATIONAL EL LEE D NATIONAL T Y P E NO. VOLTAGE R A N G E Peak on-state sinusoidal current @ Tc =65°C, 50% duty A I tim • 7734T17 OOOOL'ìS 57b ■ NAT C612 C613 C648 C712 C713 1300-2000 1300-2000 500-1200 1300-2000 1300-2000


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    PDF 7734T1? C648N C648T C648P C648PA C648PB C612PC C613PC C712PC C713PC C712L TO200AC C648PB c712pd C612L c712pn C713 C612 C613 C648E

    GE C712

    Abstract: C612 C613 C648 C648E C648M C648P C648T C712 SCR firing inverter circuit
    Text: 700 TO 1500 AMPERES C648 C612 C 613 C 712 A M P L IF Y IN G G ATE A M P L IF Y IN G G A TE A M P L IF Y IN G G A TE A M P L IF Y IN G GATE 5 00 1200 1500-1800 GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE 1500-2000 S 1500-2000 FORWARD CONDUCTION


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    PDF 488BHIIMIÃ GE C712 C612 C613 C648 C648E C648M C648P C648T C712 SCR firing inverter circuit

    Thyristor c612

    Abstract: C612L C612 C612PE C612PM C612PN C612PS C612PT 20-CX
    Text: C612 40 mm Inverter Thyristor 2000V / 735A / 60us S IL IC O N ^ ^TpOWGR The C612 is ideal for forced commutation. It is processed by multi-diffusion, utilizing 40mm diameter silicon with a unique involute pilot gate. It is supplied in a disk package ready to


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    PDF C612L C612PT C612PN C612PS C612PM C612PE C612/6RT42 0V/15 0V/10 10jUsec. Thyristor c612 C612 20-CX

    alcoa electrical joint compound

    Abstract: SF1154 C613 3M Electric Joint Compound C612 C648 C648E C648M C648P C648T
    Text: 700 TO 1500 AMPERES C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1 5 0 0 -1 8 0 0 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S VO LTAG E RANG E FO RW ARD CONDUCTION . 'T R M S


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    PDF 488BHIIMIÃ SF1154 SF1154, G322L LS2037 G322L, alcoa electrical joint compound C613 3M Electric Joint Compound C612 C648 C648E C648M C648P C648T

    diode c648

    Abstract: C648 GE SCR 1000 AMP scr c385 GE SCR C648 c358 C612 C613 C648E 25C312
    Text: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G G A TE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S


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    PDF 488BHIIMIÃ SF1154, G322L diode c648 C648 GE SCR 1000 AMP scr c385 GE SCR C648 c358 C612 C613 C648E 25C312

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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    2SA124

    Abstract: OC343 2SA123 MA520 TF65 OC54 t1826 2n1750 2SA37 OC56
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


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    PDF 25M5A MA240 25MSA MA393EÃ JAN2N129 TI380 TI379 TI381 TI382 TI383 2SA124 OC343 2SA123 MA520 TF65 OC54 t1826 2n1750 2SA37 OC56

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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