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    C3072 Search Results

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    C3072 Price and Stock

    onsemi MOC3072SR2VM

    6PW RP TRIAC T&R VDE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MOC3072SR2VM Digi-Reel 1,520 1
    • 1 $1.5
    • 10 $0.947
    • 100 $1.5
    • 1000 $0.64388
    • 10000 $0.64388
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    MOC3072SR2VM Cut Tape 1,520 1
    • 1 $1.62
    • 10 $1.023
    • 100 $1.62
    • 1000 $0.60116
    • 10000 $0.60116
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    MOC3072SR2VM Reel 1,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.56455
    • 10000 $0.48408
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    Mouser Electronics MOC3072SR2VM 881
    • 1 $1.49
    • 10 $0.946
    • 100 $0.7
    • 1000 $0.53
    • 10000 $0.48
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    Newark MOC3072SR2VM Bulk 1,000
    • 1 -
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    • 100 -
    • 1000 $0.623
    • 10000 $0.488
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    Avnet Silica MOC3072SR2VM 3,000 16 Weeks 1,000
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    EBV Elektronik MOC3072SR2VM 17 Weeks 1,000
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    New Advantage Corporation MOC3072SR2VM 2,000 1
    • 1 -
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    • 100 -
    • 1000 $0.787
    • 10000 $0.7282
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    onsemi MOC3072SVM

    6PW RP TRIAC SMD VDE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MOC3072SVM Tube 1,199 1
    • 1 $1.89
    • 10 $1.89
    • 100 $1.89
    • 1000 $0.68434
    • 10000 $0.59208
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    Mouser Electronics MOC3072SVM 1,000
    • 1 $1.88
    • 10 $0.945
    • 100 $0.863
    • 1000 $0.675
    • 10000 $0.592
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    Newark MOC3072SVM Bulk 1
    • 1 $1.92
    • 10 $1.23
    • 100 $0.904
    • 1000 $0.683
    • 10000 $0.62
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    Avnet Silica MOC3072SVM 16 Weeks 1,000
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    EBV Elektronik MOC3072SVM 17 Weeks 1,000
    • 1 -
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    Picker Components PC307-24G-X

    RELAY GEN PURPOSE SPDT 1A 24V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PC307-24G-X Tube 1,175 1
    • 1 $1.43
    • 10 $1.43
    • 100 $1.0726
    • 1000 $0.83426
    • 10000 $0.80446
    		Buy Now

    onsemi MOC3072SM

    6-PIN DIP RAND. PHASE TRIAC OUTP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MOC3072SM Bulk 920 1
    • 1 $1.44
    • 10 $0.909
    • 100 $1.44
    • 1000 $0.50904
    • 10000 $0.46177
    		Buy Now
    Mouser Electronics MOC3072SM 1,538
    • 1 $1.43
    • 10 $0.909
    • 100 $0.672
    • 1000 $0.451
    • 10000 $0.451
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    Newark MOC3072SM Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.598
    • 10000 $0.468
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    Rochester Electronics MOC3072SM 58 1
    • 1 $0.5
    • 10 $0.5
    • 100 $0.47
    • 1000 $0.425
    • 10000 $0.425
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    TME MOC3072SM 1
    • 1 $1.628
    • 10 $0.899
    • 100 $0.688
    • 1000 $0.594
    • 10000 $0.576
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    Avnet Silica MOC3072SM 16 Weeks 1,000
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    EBV Elektronik MOC3072SM 17 Weeks 1,000
    • 1 -
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    onsemi MOC3072TVM

    OPTO TRIAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MOC3072TVM Tube 920 1
    • 1 $1.75
    • 10 $1.114
    • 100 $1.75
    • 1000 $0.62262
    • 10000 $0.53634
    		Buy Now
    Mouser Electronics MOC3072TVM 401
    • 1 $1.53
    • 10 $0.971
    • 100 $0.703
    • 1000 $0.596
    • 10000 $0.523
    		Buy Now
    Avnet Silica MOC3072TVM 16 Weeks 1,000
    • 1 -
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    EBV Elektronik MOC3072TVM 1,000 17 Weeks 1,000
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    New Advantage Corporation MOC3072TVM 1,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.9742
    • 10000 $0.9742
    		Buy Now
    Find more C3072 price and stock on Findchips.com

    C3072 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C30723G PerkinElmer Optoelectronics Ingaas Pin Large-area 900 NM to 1700 NM Original PDF
    C30723GH Excelitas Technologies INGAAS PIN, 5MM, TO-8 PACKAGE Original PDF
    C30724P EG&G LOW COST SILICON AVALANCHE PHOTODIODE (Plastic Encapsulated Package) Scan PDF
    C30724PH Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE APD TO-18 PLASTIC Original PDF

    C3072 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c3072

    Abstract: line filter 6.8mH C307-2
    Text: C3072 REV A Product Description 6.8mH Ringing Filter Inductor Customer Terminal #1 Indicator EIA date code and lot code A COEV C3072 XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface A +0.006"/-0.000" 0.40 .016REF 1 8 2 7 3 6 4 5 [11.05 MAX] 0.435 MAX [9.14 MAX]


    Original     		PDF C3072 C3072 016REF 10kHz, 100mVAC, 100mADC, 100kHz, line filter 6.8mH C307-2

    Untitled

    Abstract: No abstract text available
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Right: TO-C30737PH Series T-1¾ TO-like hrough-Hole Package (4.9 mm Diameter) Let: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coeficient APD


    Original     		PDF O-C30737PH C30737LH C30737 C30724 Standard-90 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92

    c3072

    Abstract: hFE kec KTC3072L marking K 00 Marking C307-2
    Text: SEMICONDUCTOR C3072L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C3072 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C3072 C3072L 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No :


    Original     		PDF KTC3072L C3072 c3072 hFE kec KTC3072L marking K 00 Marking C307-2

    c3072

    Abstract: KTC3072D
    Text: SEMICONDUCTOR C3072D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C3072 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C3072 C3072D 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No :


    Original     		PDF KTC3072D C3072 c3072 KTC3072D

    smd t1A

    Abstract: t1A 13
    Text: Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-1¾ TO-like Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F inding Applications C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD


    Original     		PDF O-C30737PH C30737LH C30737 C30724 C3072490 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92 C30724EH smd t1A t1A 13

    Untitled

    Abstract: No abstract text available
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    MAX8770

    Abstract: ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta
    Text: 1 2 3 4 5 CPU Yonah/Merom 478 PIN micro FC-PGA 1 RJ9 Block Diagram P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM CRT P11 P2 P12 945GM/PM R/G/B ICS954310 R/G/B 1466 PIN (micro FCBGA)


    Original     		PDF 318MHz 166X4) ICS954310 945GM/PM P5-10 16Lanes P36-40 88E8053 ALC260 TI-TPA6011A4 MAX8770 ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta

    C3072

    Abstract: 2SC3072 c3072 npn
    Text: C3072 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC3072 C3072 2SC3072 c3072 npn

    C3072

    Abstract: c3072 npn 2SC3072
    Text: C3072 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC3072 20070701-JA C3072 c3072 npn 2SC3072

    PGEW 3S09

    Abstract: C30724 PerkinElmer Optoelectronics 3S09 PGEW 1S03 laser diode 905nm 905nm Plastic Pulsed Laser Diode LO-081 2S09 PGEW2S09
    Text: Optoelectronics Description Applications The PGEW series employs an advanced multiple quantum well laser diode chip design producing high peak output power at low drive current. Peak wavelength is centered near the maximum responsivity of most silicon photodiodes including PerkinElmer


    Original     		PDF C30724 905nm lO-0812/03 PGEW 3S09 PerkinElmer Optoelectronics 3S09 PGEW 1S03 laser diode 905nm 905nm Plastic Pulsed Laser Diode LO-081 2S09 PGEW2S09

    Untitled

    Abstract: No abstract text available
    Text: D A T A S H E DPGEW & TPGEW Series 905 nm Pulsed Laser Diodes E S E N S O R S O LUTI O N S Multi EPI-Cavity Plastic Lasers T Overview The double DPEW and triple (TPGEW) EPI-cavity structures are 905 nm pulsed lasers in low cost plastic encapsulated packages. These package types complement PerkinElmer's


    Original     		PDF DTS1107

    laser diode 905nm

    Abstract: C30724 EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09
    Text: PGEW Series 905nm Plastic Pulsed Laser Diode Description Applications The PGEW series employs an advanced multiple quantum well laser diode chip design producing high peak output power at low drive current. Peak wavelength is centered near the maximum responsivity of


    Original     		PDF 905nm C30724 lO-0812/03 laser diode 905nm EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09

    2SC3072

    Abstract: C3072
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072 2SC3072 C3072

    c3072

    Abstract: 2SC3072 c3072 npn
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072 c3072 2SC3072 c3072 npn

    c3072

    Abstract: 2SC3072 c3072 npn
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) ·


    Original     		PDF 2SC3072 c3072 2SC3072 c3072 npn

    c3072

    Abstract: c3072 npn 2SC3072
    Text: Transistors SMD Type Silicon NPN Epitaxial C3072 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High DC current gain. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		PDF 2SC3072 O-252 C3072 c3072 c3072 npn 2SC3072

    Untitled

    Abstract: No abstract text available
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072

    c3072 npn

    Abstract: c3072
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072 c3072 npn c3072

    2SC3072

    Abstract: C3072
    Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072 2SC3072 C3072

    c3207

    Abstract: C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320
    Text: CR-1 8 7 6 5 3 4 2 1 REVISIONS ZONE DESCRIPTION LTR DATE APPR. SONY PROPRIETARY INFORMATION F F SONY CONFIDENTIAL IRX-3130 E SCHEMATICS E TV TUNER BOARD ENX-31 TABLE OF CONTENTS BLOCK TITLE D PAGE REF.NO. DESCRIPTIONS 1 XXXX - XXXX INDEX THIS PAGE HISTORY


    Original     		PDF IRX-3130 ENX-31 RB3557 RB3600 RB3601 RB3602 RB3603 RB3610 RB3611 RB3612 c3207 C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320

    EG*G Optoelectronics

    Abstract: C30724 C30724P EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100
    Text: J^E G S G CANADA AN OPTOELECTRONICS GROUP COMPANY SÌ APD Package 04-22-97) C30724P Features: 3.25/3.17 ( 0 . 1 2 8 ) / ( 0 .125) 3_ 1 .0 2 (0.040) CATHODE cxzzr 3 t = I J . 2.54 ( 0 . 100 ) ANODE 0 .4 6 -c


    OCR Scan     		PDF C30724P 900nm C30724P EG*G Optoelectronics C30724 EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76