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    Motorola Semiconductor Products BSS71

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    KEMET Corporation C0805N479B1GSH 7189

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 4.7PF 100V .1PF
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    BSS71 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSS71 On Semiconductor High Voltage Transistor Original PDF
    BSS71 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=200 / Ic=0.5 / Hfe=40-250 / fT(Hz)=50M / Pwr(W)=0.5 Original PDF
    BSS71 Motorola European Master Selection Guide 1986 Scan PDF
    BSS71 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSS71 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BSS71 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSS71 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSS71CSM Semelab Bipolar NPN Device in a Hermetically Sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications Original PDF
    BSS71/D On Semiconductor CASE 22-3, STYLE1 TO-8 (TO-06AA) Original PDF
    BSS71DCSM Semelab Dual Bipolar NPN Devices in a Hermetically Sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications Original PDF
    BSS71S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSS71S STMicroelectronics High Voltage Amplifier TO-18 Scan PDF

    BSS71 Datasheets Context Search

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    BSS71

    Abstract: LE17 8576
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSS71 • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for High Voltage Amplifier and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF BSS71 500mA 500mW O-206AA) BSS71 LE17 8576

    BSS71CSM

    Abstract: No abstract text available
    Text: BSS71CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF BSS71CSM 10/30m 2-Aug-02 BSS71CSM

    BSS71DCSM

    Abstract: No abstract text available
    Text: BSS71DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15


    Original     		PDF BSS71DCSM MO-041BB) 10/30m 2-Aug-02 BSS71DCSM

    BSS71

    Abstract: No abstract text available
    Text: BSS71 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS71 O206AA) 10/30m 2-Aug-02 BSS71

    Untitled

    Abstract: No abstract text available
    Text: BSS71S HIGH VOLTAGE AMPLIFIER DESCRIPTION The BSS71S is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 µA to 100 mA. The complementary PNP type is the BSS74S.


    Original     		PDF BSS71S BSS71S BSS74S.

    2A 40V NPN

    Abstract: 150v 3A pnp BSW68A bu326
    Text: Search Results Part number search for devices beginning "BSS71" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BSS71 NPN TO18 200V 0.5A 40 250 10/30m 50MHz


    Original     		PDF BSS71" BSS71 BSS71CSM BSS71CSM-JQR-B BSS71DCSM BSS71DCSM-JQR-B 10/30m 2A 40V NPN 150v 3A pnp BSW68A bu326

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSS71 • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for High Voltage Amplifier and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF BSS71 500mA 500mW 86mW/Â O-206AA)

    BSS71 MOTOROLA

    Abstract: BSS71 1N914
    Text: MOTOROLA Order this document by BSS71/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon BSS71 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 200 Vdc Collector– Base Voltage VCBO


    Original     		PDF BSS71/D BSS71 BSS71 MOTOROLA BSS71 1N914

    BSS71

    Abstract: No abstract text available
    Text: BSS71 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS71 O206AA) 10/30m 19-Jun-02 BSS71

    BSS74S

    Abstract: No abstract text available
    Text: BSS74S HIGH VOLTAGE AMPLIFIER PRELIMINARY DATA DESCRIPTION The BSS74S is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 µA to 100 mA. The complementary NPN type is the BSS71S.


    Original     		PDF BSS74S BSS74S BSS71S.

    bss7

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JEf RSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 COU.ECTOR 3 >-&\J n i EMITTER BSS71 MAXIMUM RATINGS Rating Symbol value Unit VCEO VCBO vEBO 200 2*) 6.0 Vdc Collector Currant— Contiruoui


    Original     		PDF BSS71 -25-C V14JU bss7

    Untitled

    Abstract: No abstract text available
    Text: BSS71 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS71 O206AA) 10/30m 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSS71 • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for High Voltage Amplifier and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF BSS71 500mA 500mW 86mW/Â O-206AA)

    Untitled

    Abstract: No abstract text available
    Text: BSS71CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF BSS71CSM 10/30m 17-Jul-02

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    BSS71S

    Abstract: BSS74S
    Text: 3DE 3> • 7^537 0031025 J>S - 5 ■ f Z 7 SGS-THOMSON A T f s I L K M « ! _ B S S 7 1 S S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTION The BSS71S is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed for


    OCR Scan     		PDF BSS71S BSS71S BSS74S. BSS74S

    BU104

    Abstract: BSX21 BU103 8SS44
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o Description BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC


    OCR Scan     		PDF BS250CSM4 8SS44 BSS44 BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BU104 BSX21 BU103

    BSS71 MOTOROLA

    Abstract: BSS71
    Text: MOTOROLA Order this document by BSS71/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon BSS71 COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage v CEO 200 Vdc Collector-Base Voltage v CBO 200 Vdc Em itter-Base Voltage


    OCR Scan     		PDF BSS71/D BSS71 BSS71 MOTOROLA BSS71

    BSW66

    Abstract: BU208A BSW67 BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSS50
    Text: 4flE D • fll331fl7 0 0 0 0 4 5 2 SEMELABL 271 ■ S H L B _ SEMELAB BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number BI.YA8A BLYA9 BLYA9A BLY50 BLY50A BSS15 BSS17 BSS33 B.SSAA BSS50 BSS51 DSS52 BSS60 BSS61 BSS62 BSS71 DSS72 BSS73


    OCR Scan     		PDF BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 120typ 2/10m 40min BSS50 BSW66 BU208A BSW67

    Untitled

    Abstract: No abstract text available
    Text: rz7 SGS-THOMSON ^ 7 # is wasratMoes BSS71S HIGH VOLTAGE AMPLIFIER D E S C R IP T IO N The BSS71Sis a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 |a,A to 100 mA. The comple­


    OCR Scan     		PDF BSS71S BSS71Sis BSS74S.

    2N2222A JANTX

    Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
    Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA


    OCR Scan     		PDF MM6427 BSS52 BSS51 BSS50 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N2222A JANTX 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF