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    BGE788 Price and Stock

    NXP Semiconductors BGE788,112

    IC AMP CATV SOT115J
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    DigiKey BGE788,112 Bulk 100
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    Rochester Electronics LLC BGE788C,112

    WIDE BAND HIGH POWER AMPLIFIER
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    NXP Semiconductors BGE788C,112

    IC AMP CATV SOT115J
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    Verical BGE788C,112 14,292 14
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    BGE788C,112 12,300 14
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    BGE788C,112 422 14
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    BGE788C,112 300 14
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    BGE788C,112 237 14
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    Rochester Electronics BGE788C,112 27,551 1
    • 1 $22.81
    • 10 $22.81
    • 100 $21.44
    • 1000 $19.39
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    BGE788 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BGE788 NXP Semiconductors 750 MHz, 34 dB gain push-pull amplifier - Composite second order distortion (CSO): -52 dB; Composite triple beat (CTB): -49 dB; Description: 750 MHz, 34 dB gain Push-Pull ; Frequency range: 40 - 750 Hz; Gain: 34 dB; Return loss (input/output): 20/20 dB; Total current consumption (Itot): 320 mA Original PDF
    BGE788 Philips Semiconductors CATV amplifier module Original PDF
    BGE788 Philips Semiconductors 750 MHz, 34 dB gain push-pull amplifier Original PDF
    BGE788 Philips Semiconductors CATV amplifier module Scan PDF
    BGE788,112 NXP Semiconductors BGE788 - RF/Microwave Amplifier, 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 9 PIN Original PDF
    BGE788,112 NXP Semiconductors 750 MHz, 34 dB gain push-pull amplifier - Composite second order distortion (CSO): -52 dB; Composite triple beat (CTB): -49 dB; Description: 750 MHz, 34 dB gain Push-Pull ; Frequency range: 40 - 750 Hz; Gain: 34 dB; Return loss (input/output): 20/20 dB; Total current consumption (Itot): 320 mA; Package: SOT115J; Container: Bulk Pack Original PDF
    BGE788C NXP Semiconductors BGE788 - RF/Microwave Amplifier, 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 9 PIN Original PDF
    BGE788C NXP Semiconductors NXP Cross Reference Original PDF
    BGE788C NXP Semiconductors Connecting people, protecting your network; NXP CATV C-family for the Chinese SARFT standard Original PDF
    BGE788C Philips Semiconductors 750 MHz, 34 dB gain push-pull amplifier Original PDF
    BGE788C,112 NXP Semiconductors BGE788C - 750 MHz, 34 dB gain push-pull amplifier, SOT115J Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BGE788C,112 NXP Semiconductors 750 MHz, 34 dB gain push-pull amplifier - Composite second order distortion (CSO): -52 dB; Composite triple beat (CTB): -49 dB; Description: 750 MHz, 35.5 dB gain Push-Pull ; Frequency range: 40 - 750 Hz; Gain: 33.2 - 35.2 dB; Return loss (input/output): 16/16 dB; Total current consumption (Itot): 325 mA; Package: SOT115J; Container: Bulk Pack Original PDF

    BGE788 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    14433

    Abstract: philips catv line amplifier BGE788 DIN45004B
    Text: BGE788 750 MHz, 34 dB gain push-pull amplifier Rev. 04 — 30 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a supply voltage of 24 V DC . The module consists of two cascaded stages both in cascode


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    PDF BGE788 OT115J MSC895 14433 philips catv line amplifier BGE788 DIN45004B

    BGE788C

    Abstract: No abstract text available
    Text: BGE788C 750 MHz, 34 dB gain push-pull amplifier Rev. 01 — 1 April 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V DC in a SOT115J package. The module consists of two cascaded stages both in cascode


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    PDF BGE788C OT115J MSC895 BGE788C

    Untitled

    Abstract: No abstract text available
    Text: 1 2 3 5 7 8 9 BGE788 750 MHz, 34 dB gain push-pull amplifier Rev. 5 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a supply voltage of 24 V DC . The module consists of two cascaded stages both in cascode


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    PDF BGE788 OT115J

    BGE788

    Abstract: BP317 DIN45004B SC16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGE788 CATV amplifier module Product specification Supersedes data of 1997 May 05 File under Discrete Semiconductors, SC16 1998 Jan 08 Philips Semiconductors Product specification CATV amplifier module BGE788 PINNING - SOT115J


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    PDF BGE788 OT115J SCA55 127167/00/02/pp8 BGE788 BP317 DIN45004B SC16

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D252 BGE788 750 MHz, 34 dB gain push-pull amplifier Product specification Supersedes data of 1998 Jan 08 2001 Nov 15 Philips Semiconductors Product specification 750 MHz, 34 dB gain push-pull amplifier FEATURES


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    PDF M3D252 BGE788 OT115J SCA73 613518/03/pp8

    BGY588N

    Abstract: BGE788 BGY588 BGE788C BGY588C SILICON NITRIDE
    Text: 捍衛我們的網絡 兩款最新 C 系列有線電視放大模塊 BGY588C BGY588 C 和 BGE788 BGE788C C 是集成型推挽放大模塊,專為中 是集成型推挽放大模塊,專為中國 國 HFC HF C 網絡設計,這兩款產品適用於農村有線電視網絡。


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    PDF BGY588C BGE788C BGY588C BGY588 BGE78 BGY588N BGE788 BGY588N BGE788 BGE788C SILICON NITRIDE

    BGE788C

    Abstract: No abstract text available
    Text: 1 2 3 5 7 8 9 BGE788C 750 MHz, 34 dB gain push-pull amplifier Rev. 2 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V DC in a SOT115J package. The module consists of two cascaded stages both in cascode


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    PDF BGE788C OT115J BGE788C

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


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    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


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    PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


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    PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    BGE788

    Abstract: Datahandbook HBCC32 TRANSIMPEDANCE mmic laser BGR269 BGS67A BGY585A BGY587 BGY587B BGY588N
    Text: Semiconductors Product Portfolio RF Access Systems CATV RF Hybrid Amplifiers * Type Number Description Reverse Hybrids BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V BGY68 75 MHz, 30 dB gain Reverse Amplifier BGY66B 120 MHz, 25 dB gain Reverse Amplifier


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    PDF BGS67A BGY68 BGY66B BGY67 BGY67A BGR269 550MHz BGY588C BGY585A BGY587 BGE788 Datahandbook HBCC32 TRANSIMPEDANCE mmic laser BGR269 BGS67A BGY585A BGY587 BGY587B BGY588N

    BF1201A

    Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
    Text: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26


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    PDF S11/S22 BGS67A BGY68 BGY66B BGY67 13MHz 900MHz SA8027 TSSOP20) 44MHz BF1201A bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A

    bgy888

    Abstract: cable tv amplifier with bge788 BGD502 BGR269 BGS67A BGY585A BGY587 BGY587B BGY588N BGY66B
    Text: Philips Semiconductors New horizons in broadband communications Wideband modules for CATV applications Innovations in CATV power - the broadband revolution Broadband cable is today more than a delivery mechanism for TV channels. With the rapid rise in content delivery and interactive services, broadband cable access is becoming the accepted


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    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一,展示了我们恩智浦半导体 (NXP


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    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    RF1119

    Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
    Text: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


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    PDF PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1000HN TFF1003HN RF1119 TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


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    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


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    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    Untitled

    Abstract: No abstract text available
    Text: C5- I I I l I lO in in in o CM O o o CO >18.5 ±0.3 CO I -61 CO CO CO 860 00 T— •<fr 49 49 5 ±0.3 5 0 to 2 5 BGY685A BGY787 240 6.5 CM CO m CO CM 240 N CO BGY885A BGE788 BGY883 o 8.5 BGY785AD 265 BGY687 BGY685AL BGY685AD CO ±0.5 BGY785A 340 N 40 >15


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    PDF BGY785A BGY685A BGY787 BGE788 BGY785AD BGY687 BGY685AL BGY685AD BGY687B BGY587B

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification CATV amplifier module BGE788 FEATURES PINNING -SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • High gain 2 common • Excellent return loss properties. 3 common 5 +ve APPLICATIONS


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    PDF BGE788 -SOT115J OT115J DIN45004B;

    SOT-115J

    Abstract: BGE788 DIN45004B
    Text: Philips Semiconductors Preliminary specification CATV amplifier module BGE788 FEA TUR ES P IN N IN G SO T115J • E xcellent linearity PIN • E xtrem ely low noise 1 • High gain 2, 3 • E xcellent return loss properties. 5 7, 8 A PP LIC A TIO N S 9 D ES C R IPTIO N


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    PDF BGE788 BGE788 OT115J OT115J MSA319 SOT-115J DIN45004B

    cable tv amplifier with bge788

    Abstract: BGE788C BGY588C BGE788 BGY588N
    Text: BGY588C BGE788C 2 new members in the C family Protect your TV Networks B G Y588C and BGE788C are integrated C A T V push-pull amplifier modules, special design for Chinese H FC network. These 2 products suit perfectly the "All Villages connected" in the H FC Netw ork


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    PDF BGY588C BGE788C cable tv amplifier with bge788 BGE788 BGY588N

    J41C

    Abstract: CGD942C BG0807C CGD944C BGE788C BG0807 BGY588C bge788ccgy888c
    Text: N X P Semiconductors + # m * £ & fe « & r a £ fr ffi& 7 ^ s w # ¥ & * 3 g o & 3 io c m ^ J £Epnp ^ 3 l ^ i + l l l l ^ r i . ^ ^ ( S A R F T ) ^ f f i ^ A p 0 ( I ^ ; f , C m ÿ lJ ^ â & a U T ^ S S O M H z Hl860MHzftjHFCpôg*&j£ffl „ j* s ►« & & * * ! £


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    PDF Hl860MHzftjHFCpà BGY588C, BGE788Cà PCGY888C CGD944Cà PCGD942C BG0807C CGD944C, J41C CGD942C BG0807C CGD944C BGE788C BG0807 BGY588C bge788ccgy888c