BDT63B Search Results

BDT63B Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
BDT63B	Philips Semiconductors	Silicon Darlington Power Transistor	Original	PDF
BDT63B	Magnatec	Silicon Darlington Power Transistor	Scan	PDF
BDT63B	Magnatec	TRANSISTOR DARLINGTON	Scan	PDF
BDT63B	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
BDT63B	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BDT63B	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BDT63B	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BDT63B	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDT63B	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
BDT63B	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BDT63B	Philips Semiconductors	SILICON DARLINGTON POWER TRANSISTORS	Scan	PDF
BDT63BF	Philips Semiconductors	Silicon Darlington Power Transistor	Original	PDF
BDT63BF	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDT63BF	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

BDT63BF	Philips Semiconductors	SILICON DARLINGTON POWER TRANSISTORS	Scan	PDF

BDT63B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	PDF	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	PDF	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	PDF	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	PDF	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	PDF	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	PDF	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
"Tektronix 475" Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,	Original	PDF	48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	PDF	MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	PDF	MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	PDF	MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	PDF	2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
BD179-10 equivalent Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	PDF	BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
sec tip41c Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power	Original	PDF	MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
TRANSISTOR BC 384 Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required	Original	PDF	TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

MJ11017 equivalent Abstract: BU108 MJ11021 BU326 BU100 MJE3055T Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types	Original	PDF	MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T
transistor 1BT Abstract: BDT62C PHILIPS npn 1bt BDT63B Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general	OCR Scan	PDF	BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B
BDT63 Abstract: BDT62 Text: BDT63; 63A BDT63B; 63C _A SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BDT62,	OCR Scan	PDF	BDT63; BDT63B; O-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 bS3T31 BDT63 BDT62
Untitled Abstract: No abstract text available Text: BDT63F; BDT63AF BDT63BF; BDT63CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a S0T186 envelope with an electrically insulated mounting base. The devices are designed fo r audio output stages and general amplifier and switching applications.	OCR Scan	PDF	BDT63F; BDT63AF BDT63BF; BDT63CF S0T186 BDT62F, BDT62AF, BDT62BF BDT62CF. BDT63F
transistor AL P09 Abstract: BDT63 bdt638 BDT53 PCTI TRANSISTOR LC80 P0910 bot62 BDT63B BDT62A Text: 2S-MAY-2000 15= 1? FROM mGNPTEC 01132794449 TO BDT63; 63A BDT63B; 63C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial basetranjistor* in monolithic Darlington circuit for Audiooutput stagesandgeneral amplifier end»witchingapplications; T0-220 plasticenvelope. p-N-Pcomplements are BDT62,	OCR Scan	PDF	2S-MAY-2000 BDT63; BDT63B; T0-220 8DT62, BDT62A; BOT62B 8DT62C. BDT53 TZ621M transistor AL P09 BDT63 bdt638 PCTI TRANSISTOR LC80 P0910 bot62 BDT63B BDT62A
bot63 Abstract: BDT62 BDT62A BDT62B BDT62C BDT63 BDT63B Text: BDT63; 63A BDT63B; 63C y v _ SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; T0-220 plastic envelope. P-N-P complements are BDT62,	OCR Scan	PDF	BDT63; BDT63B; T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T0-220. bot63 BDT62 BDT62A BDT62C BDT63B
BDT63 Abstract: transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A Text: J PHILIPS INTERNATIONAL SbE D BDT63; 63A BDT63B; 63C 711Dfl2fc. 004355^ TT T • ■ PH IN T-JJ-Z7 SILICON DARLINGTON POWER TRANSISTORS N -P-N ep itaxial base transistors in m o n o lith ic D arling to n c irc u it fo r audio o u tp u t stages and general	OCR Scan	PDF	BDT63; BDT63B; 711DflHh T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A
BDT63BF Abstract: 63BF BDT*63CF BDT63CF BDT63F 63CF AI mm sot 553 BDT62AF BDT62BF BDT62CF Text: BDT63F; BDT63AF I ^BDT63BF; BPT63CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a S 0 T 1 8 6 envelope w ith an electrically insulated mounting base. Th e devices are designed fo r audio output stages and general am plifier and switching applications.	OCR Scan	PDF	BDT63F; BDT63AF BDT63BF; BDT63CF S0T186 BDT62F, BDT62AF, BDT62BF BDT62CF. BDT63F BDT63BF 63BF BDT*63CF BDT63CF 63CF AI mm sot 553 BDT62AF BDT62CF
BDT63BF Abstract: BDT62AF 3SM diode 62AF BDT62BF BDT62CF BDT62F BDT63AF BDT63CF BDT63F Text: BDT62F; BDT62AF ^BDT62BF; BDT62CF PHILIPS I N T E R NA TI O NA L SbE D 711DöBb 0 0 4 3 2 4 fl SILICON DARLINGTON POWER TRANSISTORS 23 B T P lTlÑ ” T-33-3/ PNP silicon darlington power transistors in a SOT186 envelope w ith an electrically insulated mounting	OCR Scan	PDF	BDT62F; BDT62AF BDT62BF; BDT62CF 711052k 354fi T-33-3/ OT186 BDT63F, BDT63AF, BDT63BF BDT62AF 3SM diode 62AF BDT62BF BDT62CF BDT62F BDT63AF BDT63CF BDT63F
silicon power 2GB Abstract: DG432 Text: BDT63F; BDT63AF ^DTBSBF; BDT63CF 1 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b Q 0 4 3 2 b b «îM *1 H P H I N T -3 3 -2 ^ SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting	OCR Scan	PDF	BDT63F; BDT63AF BDT63CF OT186 T62BF T62CF. BDT63F OT186. BDT63AF silicon power 2GB DG432

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BDT63B Search Results

BDT63B Datasheets (15)

BDT63B Datasheets Context Search

k2645

BUV48I

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

"Tektronix 475"

D42C5

mje521 equivalent

2N3055

2N5631 equivalent

BD179-10 equivalent

sec tip41c

TRANSISTOR BC 384

MJ11017 equivalent

transistor 1BT

BDT63

Untitled

transistor AL P09

bot63

BDT63

BDT63BF

BDT63BF

silicon power 2GB