BD135 SMD Search Results

BD135 SMD Result Highlights (5)

Part	Manufacturer	Description
BLM15PX121BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 120ohm POWRTRN
BLM15PX181SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 180ohm POWRTRN
BLM21HE802SN1L	Murata Manufacturing Co Ltd	FB SMD 0805inch 8000ohm NONAUTO
BLM15PX330BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 33ohm POWRTRN
BLM15PX600SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 60ohm POWRTRN

BD135 SMD Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
bd135 TRANSISTOR REPLACEMENT GUIDE Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	PDF	BD135 BD137 BD139 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd135 TRANSISTOR REPLACEMENT GUIDE transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
2N2907 SOT-23 Abstract: BC547 smd 2n2222 smd BAT16-046 2n2907 smd SMD BC547 2n2222 sot-23 BB409 BC517 "cross reference" 2N3563 Text: Data Book Leaded Devices SMD-Packages SOT-89 SOT-223 1N4001 SOD-323 SCD-80 SOT-23 SOT-143 SOT-323 SOT-343 SOT-363 BAW78A BAS78A 1N4002 BAW78B BAS78B 1N4003 BAW78C BAS78C 1N4004 SCT-595 BAW78D BAS78D 1N4001 2x BAW79A BAS79A 1N4002 (2x) BAW79B BAS79B 1N4003 (2x)	Original	PDF	OT-89 OT-223 1N4001 OD-323 SCD-80 OT-23 OT-143 OT-323 OT-343 OT-363 2N2907 SOT-23 BC547 smd 2n2222 smd BAT16-046 2n2907 smd SMD BC547 2n2222 sot-23 BB409 BC517 "cross reference" 2N3563
BF963 Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd Text: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99	Original	PDF	OD-123 1N4001 1N4002 1N4003 1N4004 1N4148 BF963 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Philips Application Note ECO6907 Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177 Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as	Original	PDF
motorola rf Power Transistor Abstract: motorola 1N4148 1N4148 BD135 MRF6402 5Bp smd transistor data SMD DIODE gp 317 Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast	Original	PDF	MRF6402/D MRF6402 MRF6402 MRF6402/D* motorola rf Power Transistor motorola 1N4148 1N4148 BD135 5Bp smd transistor data SMD DIODE gp 317
diode 1N4148 SMD PACKAGE DIMENSION Abstract: motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148 Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast	Original	PDF	MRF6402/D MRF6402 MRF6402 diode 1N4148 SMD PACKAGE DIMENSION motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148
DIODE SMD 012 MOTOROLA Abstract: PL 431 transistor Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 13/11/99 The RF Line MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast	Original	PDF	MRF6402/D MRF6402 MRF6402 MRF6402/D DIODE SMD 012 MOTOROLA PL 431 transistor
TRANSISTOR BC337 SMD Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139 Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices	Original	PDF	MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A PN2222A MPS2907A MPSA06 MPSA56 TRANSISTOR BC337 SMD transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
philips power transistor bd139 Abstract: bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd Text: AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat BISS transistors Rev. 01.00 — 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low VCEsat, PBSS, power transistors	Original	PDF	AN10405 philips power transistor bd139 bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd
MJ3001 equivalent Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc	Original	PDF	MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
motorola MJ15001 Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —	Original	PDF	MJ15001 MJ15002 MJ15002 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A motorola MJ15001 BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
TIP142 TRANSISTOR REPLACEMENT Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V	Original	PDF	TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
2SC105 Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp	Original	PDF	2N4918, 2N4919, 2N4920 2N4921 2N4923* TIP73B TIP74 TIP74A TIP74B TIP75 2SC105 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
All similar transistor 2sa715 Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc	Original	PDF	BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference

2SA1046 Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.	Original	PDF	BUX85 BUX85 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA1046 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
mje15033 replacement Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.	Original	PDF	MJE341 MJE344 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje15033 replacement BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
BU108 Abstract: TIP105 Darlington transistor BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —	Original	PDF	MJE2361T MJE2360T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 TIP105 Darlington transistor BDX54 BU326 BU100
2N2907 SOT-23 Abstract: 1N4004 SOD-123 BC517 "cross reference" BC8488 BAT16-046 1N4148 SOD-323 A BCS59 BC548 sot 2N2907 CROSS BC548 cross reference Text: SIEMENS Leaded Devices Cross Reference SMD-Packages SOD-123 SOD-323 SOT-23 SOT143 SOT-323 1N4001 1N4002 1N4003 1N4004 1N40Q1 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 SOT-89 SOT-223 BAW78A BAW78B BAW 78C BAW78D BAW79A BAW79B BAW79C BAW79D BAS78A BAS78B	OCR Scan	PDF	1N4001 1N4002 1N4003 1N4004 1N40Q1 1N4002 1N4003 1N4004 1N4148 OD-123 2N2907 SOT-23 1N4004 SOD-123 BC517 "cross reference" BC8488 BAT16-046 1N4148 SOD-323 A BCS59 BC548 sot 2N2907 CROSS BC548 cross reference
bc327 smd Abstract: bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd Text: Philips Sem iconductors Small-signal Transistors Conversion list CONVERSION LIST FROM LEADED TO SMD TYPES LEADED SMD LEADED SMD LEADED SMD BC107 BC847 BC546 BC846 BC107A BC847A BC546A BC846A BC107B BC847B BC546B BC846B BC108 BC848 BC547 BC847 BC108A BC848A	OCR Scan	PDF	BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C bc327 smd bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd
40 pin J004 Abstract: transistor bd135 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and	OCR Scan	PDF	MRF6402 1N4148 BD135 40 pin J004 transistor bd135
MRF6402 Abstract: transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6402 The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and	OCR Scan	PDF	MRF6402 MRF6402 1N4148 BD135 transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148
1206 transistor Abstract: chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an internally matched input. •	OCR Scan	PDF	MRF6406 1206 transistor chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent
43 JO smd Abstract: 1c smd transistor transistor bd135 chip PCN resistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The M RF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold m etallizations and offers a high degree of reliability and	OCR Scan	PDF	MRF6402 MRF6402 1N4148 BD135 43 JO smd 1c smd transistor transistor bd135 chip PCN resistor
5Bp smd Abstract: smd transistor 8g 1N4148 ATC100A BD135 CS-12 MRF6406 CASE-319 bd135 equivalent Transistor t 2 smd motorola Text: Order this data sheet by MRF6406/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an	OCR Scan	PDF	MRF6406/D MRF6406 MRF6406 2PHX33607Q-0 MRF6406/D 5Bp smd smd transistor 8g 1N4148 ATC100A BD135 CS-12 CASE-319 bd135 equivalent Transistor t 2 smd motorola

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BD135 SMD Search Results

BD135 SMD Result Highlights (5)

BD135 SMD Datasheets Context Search

bd135 TRANSISTOR REPLACEMENT GUIDE

2N2907 SOT-23

BF963

Philips Application Note ECO6907

motorola rf Power Transistor

diode 1N4148 SMD PACKAGE DIMENSION

DIODE SMD 012 MOTOROLA

TRANSISTOR BC337 SMD

philips power transistor bd139

MJ3001 equivalent

motorola MJ15001

TIP142 TRANSISTOR REPLACEMENT

2SC105

All similar transistor 2sa715

2SA1046

mje15033 replacement

BU108

2N2907 SOT-23

bc327 smd

40 pin J004

MRF6402

1206 transistor

43 JO smd

5Bp smd