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    ATC700A Price and Stock

    American Technical Ceramics Corp ATC700A2R0BP150XT

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    Bristol Electronics ATC700A2R0BP150XT 1,568
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    American Technical Ceramics Corp ATC700A330JP150X

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    Bristol Electronics ATC700A330JP150X 277
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    American Technical Ceramics Corp ATC700A0R1BW 150X

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    Bristol Electronics ATC700A0R1BW 150X 40
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    American Technical Ceramics Corp ATC700A101GW150XT

    CAPACITOR, CERAMIC, MULTILAYER, 150 V, C0G, 0.0001 UF, SURFACE MOUNT, 0606
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    Quest Components ATC700A101GW150XT 616
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    American Technical Ceramics Corp ATC700A0R7BP50X

    CERAMIC CHIP CAPACITOR
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    Quest Components ATC700A0R7BP50X 604
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    Find more ATC700A price and stock on Findchips.com

    ATC700A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATC700A4R7BT150XT American Technical Ceramics CER CAP Original PDF
    ATC700A4R7BT150XT American Technical Ceramics CER CAP Original PDF

    ATC700A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1


    Original     		PDF MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1. PCN12895 MRF6S9060NBR1 MRF6S9060NR1 MRF6S9060NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6S9060N MRFE6S9060NR1

    Resistor mttf

    Abstract: MRF6S9060NBR1 MRF6S9060NR1 MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION


    Original     		PDF MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1. PCN12895 MRF6S9060NBR1 MRF6S9060NBR1 Resistor mttf MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MMRF1315N MMRF1315NR1 IS--95 7/2014Semiconductor,

    MHVIC910HR2

    Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010N MW6S010NR1 MW6S010GNR1 MHVIC910HR2 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.


    Original     		PDF BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW6S010N Rev. 5, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010N MW6S010NR1 MW6S010GNR1

    ATC700a

    Abstract: vga to rgb sync MAX9539 MAX9540 19-0638 video graphic* controller sub-d 15 13 pins vga signal cable hd 26 d-sub ribbon RGBhv to
    Text: 19-0638; Rev 0; 8/06 MAX9539/40 Evaluation Kit The MAX9539/40 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that contains one MAX9539 and one MAX9540 multisignal sync system. The MAX9539 is a video graphic sync adder and the MAX9540 is a video graphic sync


    Original     		PDF MAX9539/40 MAX9539 MAX9540 MAX9539/MAX9540 MAX9540 ATC700a vga to rgb sync 19-0638 video graphic* controller sub-d 15 13 pins vga signal cable hd 26 d-sub ribbon RGBhv to

    MRF5S9070NR

    Abstract: No abstract text available
    Text: Document Number: MRF5S9070NR1 Rev. 7, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S9070NR1 MRF5S9070NR

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1015N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1015NR1 MMRF1015GNR1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and


    Original     		PDF MMRF1015N MMRF1015NR1 MMRF1015GNR1 MMRF1015NR1

    BLF7G3135L-350P

    Abstract: ATC700A
    Text: BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 1 — 12 October 2012 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1.


    Original     		PDF BLS7G3135L-350P; BLS7G3135LS-350P BLS7G3135L-350P 7G3135LS-350P BLF7G3135L-350P ATC700A

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 2 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.


    Original     		PDF BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P

    MwT-22Q4

    Abstract: ATC100a101 ATC200B104 ATC700a ATC700A102 MWT22Q4
    Text: MwT-22Q4 High Power, High Linearity Packaged FET Features • • • • Ideal for DC-4000 MHz High Power / High Linearity Applications Excellent RF Performance: o 33 dBm P1dB o 47 dBm IP3 o 16 dB SSG @ 2000 MHz o 40% PAE MTTF > 100 years @ Channel Temperature 150°C


    Original     		PDF MwT-22Q4 DC-4000 MwT-22Q4 cdma2000, TRL10 ATC100a101 ATC200B104 ATC700a ATC700A102 MWT22Q4

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6S9060N MRFE6S9060NR1

    ATC100B160JT500XT

    Abstract: ESMG FREESCALE PACKING rfics marking 5 JESD22 MRF5S9070NR1 A113 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S9070NR1 ATC100B160JT500XT ESMG FREESCALE PACKING rfics marking 5 JESD22 MRF5S9070NR1 A113 A114 A115 AN1955

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.


    Original     		PDF BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 2 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.


    Original     		PDF CLF1G0035-100P; CLF1G0035S-100P CLF1G0035-100P CLF1G0035S-100P 1G0035S-100P

    ALT1110

    Abstract: MRFE6S9060N ATC700a MRFE6S9060NR1 A113 A114 A115 AN1955 ATC100B470JT500XT C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6S9060N MRFE6S9060NR1 ALT1110 MRFE6S9060N ATC700a MRFE6S9060NR1 A113 A114 A115 AN1955 ATC100B470JT500XT C101

    marking C8 amplifier

    Abstract: ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08
    Text: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.


    Original     		PDF BLF2022-90; OT502A AN01001 marking C8 amplifier ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08

    RPE123

    Abstract: RPE132 ATC200B EIA-198 murata ma28 331J COG 100 EIA-198 method 103 RPE131 ATC100E RPE121
    Text: APPLICATION SPECIFIC CAPACITORS CATALOG C-29-B Please visit our website www.murata.com CONTENTS US Manufacturing Process Guide .1 Glossary of Specialized


    Original     		PDF C-29-B RPE123 RPE132 ATC200B EIA-198 murata ma28 331J COG 100 EIA-198 method 103 RPE131 ATC100E RPE121

    MRF6S9060NBR1

    Abstract: C1547 A114 A115 C101 JESD22 MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1 ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 RF Power Field Effect Transistors MRF6S9060NR1 MRF6S9060NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9060N MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060NR1 MRF6S9060NBR1 C1547 A114 A115 C101 JESD22 MRF6S9060N MRFE6S9060NR1 ATC-100B-3R0

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.


    Original     		PDF BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P

    MVM010

    Abstract: MURATA mvm010 PC26T140 PC26J300 PC24J4R5 MVM010W GHC11000 mav03 pc28j3r5 CDR21BG
    Text: Configuration Microelectronics Johanson Vottro -nics Tronser MIL Designation Tekelec II n MTR02X YV 1 1 MTR12X MTR22X l i MTR32X «E». a w MTR42X ea H i U t MTR52X MTR021 MTR121 MTR221 MTR321 MTR421 MTR521 27260 27261 27261SL 27264 27265 27263 P1A P1B P1J


    OCR Scan     		PDF MTR021 MTR121 MTR221 MTR321 MTR421 MTR521 MTR921 MTR022 MTR122 MTR222 MVM010 MURATA mvm010 PC26T140 PC26J300 PC24J4R5 MVM010W GHC11000 mav03 pc28j3r5 CDR21BG