RFP70N06
Abstract: AN9322 AVALANCHE TRANSISTOR
Text: Harris Semiconductor No. AN9322.1 Harris Power MOSFET January 1996 A Combined Single Pulse and Repetitive UIS Rating System Author: Wallace D. Williams the +25oC line, the application is beyond the UIS rating of the device and the user stands a risk of device failure. If the
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AN9322
1-800-4-HARRIS
RFP70N06
AVALANCHE TRANSISTOR
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Common rail piezo injector driver
Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or
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RF1K49093
Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI
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RF1K49093
RF1K49093
1e-30
61e-4
09e-6)
10e-3
99e-6)
82e-3
47e-7)
AN7254
AN9321
AN9322
MS-012AA
RF1K4909396
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AN9321
Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Text: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113DK8
AN9321
AN9322
HUF76113DK8
HUF76113DK8T
MS-012AA
TB334
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75631P
Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Text: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE
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HUFA75631P3,
HUFA75631S3ST
O-220AB
O-263AB
HUFA75631P3
75631P
AN9321
HUFA75631P3
HUFA75631S3ST
TB334
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF70N06
MIL-S-19500.
150oC
TA49007.
AN7254
AN7260
AN9321
AN9322
RFF70N06
RFG70N06
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76639p
Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
Text: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic
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HUF76639P3,
HUF76639S3S
O-220AB
HUF76639P3
76639p
HUF76639P3
HUF76639S3S
HUF76639S3ST
TB334
92e2
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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RELAY 4088
Abstract: TB334 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L
Text: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet Title FD1 06L D14 6LS P14 6L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using
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RFD14N06L,
RFD14N06LSM,
RFP14N06L
RELAY 4088
TB334
RFD14N06L
RFD14N06LSM
RFD14N06LSM9A
RFP14N06L
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AN9321
Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
Text: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3
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HUFA76413D3,
HUFA76413D3S
O-251AA
O-252AA
HUFA76413D3
AN9321
HUFA76413D3
HUFA76413D3S
HUFA76413D3ST
TB334
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AN9321
Abstract: HUFA75823D3 HUFA75823D3S HUFA75823D3ST TB334 27e5
Text: HUFA75823D3, HUFA75823D3S Data Sheet November 2000 File Number 4965 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75823D3S HUFA75823D3 Features
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HUFA75823D3,
HUFA75823D3S
O-251AA
O-252AA
HUFA75823D3
75823D
AN9321
HUFA75823D3
HUFA75823D3S
HUFA75823D3ST
TB334
27e5
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AN7254
Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
Text: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI
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RF1K49154
AN7254
AN9321
AN9322
MS-012AA
RF1K49154
RF1K4915496
TB334
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HUF76445P3
Abstract: HUF76445S3S HUF76445S3ST TB334
Text: HUF76445P3, HUF76445S3S Data Sheet October 1999 File Number 4676.3 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 45P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76445P3 HUF76445S3S D rpor on, ann gic vel raF wer
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HUF76445P3,
HUF76445S3S
O-220AB
HUF76445P3
HUF76445P3
HUF76445S3S
HUF76445S3ST
TB334
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75307
Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75307P3,
HUF75307D3,
HUF75307D3S
75307
75307d
transistor 75307D
HUF75307D3
HUF75307D3S
HUF75307D3ST
HUF75307P3
TA75307
TB334
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75307
Abstract: 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7
Text: HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet November 2000 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs Title UFA7 07P3, UFA7 07D3, UFA7 07D3 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUFA75307P3,
HUFA75307D3,
HUFA75307D3S
75307
75307d
transistor 75307D
HUFA75307D3
HUFA75307D3S
HUFA75307D3ST
HUFA75307P3
TA75307
TB334
UFA7
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76423P
Abstract: 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13
Text: HUFA76423P3, HUFA76423S3S Data Sheet November 2000 File Number 4980 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76423P3 HUFA76423S3S
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HUFA76423P3,
HUFA76423S3S
O-220AB
O-263AB
HUFA76423P3
76423P
76423S
HUFA76423P3
HUFA76423S3S
HUFA76423S3ST
TB334
63E13
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59E-1
Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
Text: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF75309T3ST
59E-1
AN7254
AN7260
AN9321
AN9322
HUF75309T3ST
TB334
TB337
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76633s
Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
Text: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S
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HUF76633P3,
HUF76633S3S
O-220AB
O-263AB
HUF76633P3
76633s
76633p
AN9321
AN9322
HUF76633P3
HUF76633S3S
HUF76633S3ST
TB334
mosfet 407
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76629D
Abstract: AN9321 HUF76629D3 HUF76629D3S HUF76629D3ST TB334 4692
Text: HUF76629D3, HUF76629D3S Data Sheet October 1999 File Number 4692.3 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 29D Packaging JEDEC TO-251AA 0V, 54 m, A, GATE SOURCE DRAIN FLANGE HUF76629D3 HUF76629D3S wer OSF ) utho eyw
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HUF76629D3,
HUF76629D3S
O-251AA
HUF76629D3
76629D
AN9321
HUF76629D3
HUF76629D3S
HUF76629D3ST
TB334
4692
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AN9321
Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
Text: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER
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HUFA75831SK8
MS-012AA
HUFA75831Slopment.
AN9321
HUFA75831SK8
HUFA75831SK8T
MS-012AA
TB370
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76629D
Abstract: AN9321 HUFA76629D3 HUFA76629D3S HUFA76629D3ST TB334
Text: HUFA76629D3, HUFA76629D3S Data Sheet November 2000 File Number 4990 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76629D3 HUFA76629D3S
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HUFA76629D3,
HUFA76629D3S
O-251AA
O-252AA
HUFA76629D3
76629D
AN9321
HUFA76629D3
HUFA76629D3S
HUFA76629D3ST
TB334
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76443P
Abstract: AN7254 AN9321 AN9322 HUF76443P3 HUF76443S3S HUF76443S3ST TB334
Text: HUF76443P3, HUF76443S3S Data Sheet October 1999 File Number 4784 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76443P3 HUF76443S3S
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HUF76443P3,
HUF76443S3S
O-220AB
O-263AB
HUF76443P3
76443P
AN7254
AN9321
AN9322
HUF76443P3
HUF76443S3S
HUF76443S3ST
TB334
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HUF76107P3
Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF76107P3
HUF76107P3
AN7260
AN7254
AN9321
AN9322
TB334
TC298
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rs808
Abstract: HUF76112SK8T AN7254 AN7260 AN9321 AN9322 HUF76112SK8 MS-012AA TB334
Text: HUF76112SK8 Data Sheet December 2001 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low
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HUF76112SK8
HUF76112SK8
725pF
rs808
HUF76112SK8T
AN7254
AN7260
AN9321
AN9322
MS-012AA
TB334
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