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    SI2303BDS Price and Stock

    Vishay Siliconix SI2303BDS-T1

    MOSFET P-CH 30V 1.49A SOT23-3
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    DigiKey SI2303BDS-T1 Reel 3,000
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    Vishay Siliconix SI2303BDS-T1-E3

    MOSFET P-CH 30V 1.49A SOT23-3
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    DigiKey SI2303BDS-T1-E3 Reel
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    SI2303BDS-T1-E3 Cut Tape
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    SI2303BDS-T1-E3 Digi-Reel 1
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    RS SI2303BDS-T1-E3 Bulk 3,000
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    Vishay Siliconix SI2303BDS-T1-GE3

    MOSFET P-CH 30V 1.49A SOT23-3
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    Vishay Intertechnologies SI2303BDS-T1-E3

    P Channel Mosfet, -30V, 1.49A, To-236; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.49A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI2303BDS-T1-E3
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    Newark SI2303BDS-T1-E3 Cut Tape 3,000
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    Bristol Electronics SI2303BDS-T1-E3 727
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    ComSIT USA SI2303BDS-T1-E3 2,789
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    Vishay Intertechnologies SI2303CDS-T1-GE3

    MOSFETs -30V Vds 20V Vgs SOT-23
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    TTI SI2303CDS-T1-GE3 Reel 6,000 3,000
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    Find more SI2303BDS price and stock on Findchips.com

    SI2303BDS Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2303BDS Sumida P-Channel 30-V (D-S) MOSFET Original PDF
    SI2303BDS Sumida P-Channel 30-V (D-S) MOSFET Original PDF
    SI2303BDS Vishay Siliconix P-Channel, 30-V (D-S) MOSFET Original PDF
    Si2303BDS-E3 Vishay Transistor Mosfet P-CH 30V 1.3A 3TO-236 Original PDF
    SI2303BDS_RC Vishay Siliconix R-C Thermal Model Parameters Original PDF
    Si2303BDS SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    Si2303BDS-T1 Vishay Transistor Mosfet P-CH 30V 1.3A 3TO-236 REEL Original PDF
    SI2303BDS-T1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 1.49A SOT23 Original PDF
    Si2303BDS-T1-E3 Vishay Transistor Mosfet P-CH 30V 1.3A 3 pin SOT-23 Original PDF
    SI2303BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 1.49A SOT23-3 Original PDF
    SI2303BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 1.49A SOT23-3 Original PDF

    SI2303BDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2303BDS-T1-E3

    Abstract: Si2303CDS-T1-E3 Si2303BDS Si2303CDS Si2303BDS-T1
    Text: Specification Comparison Vishay Siliconix Si2303CDS vs. Si2303BDS Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2303CDS-T1-E3 replaces Si2303BDS-T1-E3 Si2303CDS-T1-E3 replaces Si2303BDS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si2303CDS Si2303BDS OT-23 Si2303CDS-T1-E3 Si2303BDS-T1-E3 Si2303BDS-T1 16-Apr-08

    Untitled

    Abstract: No abstract text available
    Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    AN609

    Abstract: Si2303BDS
    Text: Si2303BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2303BDS AN609 13-Mar-07

    Si2303BDS

    Abstract: Si2303BDS-T1 Si2303BDS-T1-E3
    Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 08-Apr-05

    Si2303BDS

    Abstract: Si2303BDS-T1 Si2303BDS-T1-E3 L3 MARKING CODE
    Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 L3 MARKING CODE

    Si2303BDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2303BDS 18-Jul-08

    Si2303DS-T1

    Abstract: Si2303DS Si2303BDS Si2303BDS-T1 Si2303BDS-T1-E3
    Text: Specification Comparison Vishay Siliconix Si2303BDS vs. Si2303DS Description: P-Channel, 30 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2303BDS-T1 Replaces Si2303DS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free version) Replaces Si2303DS-T1


    Original     		PDF Si2303BDS Si2303DS OT-23 Si2303BDS-T1 Si2303DS-T1 Si2303BDS-T1-E3 06-Nov-06

    70318

    Abstract: Si2303BDS Si2303BDS SPICE Device Model
    Text: SPICE Device Model Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2303BDS S-50232Rev. 28-Feb-05 70318 Si2303BDS SPICE Device Model

    Si2303BDS

    Abstract: No abstract text available
    Text: Si2303BDS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.200 @ VGS = -10 V -1.4 0.380 @ VGS = -4.5 V -1.0 VDS (V) -30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303BDS (L3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2303BDS O-236 OT-23) S-21980--Rev. 04-Nov-02

    Si2303BDS

    Abstract: Si2303BDS-T1 Si2303BDS-T1-E3
    Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si2303BDS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.200 @ VGS = -10 V -1.4 0.380 @ VGS = -4.5 V -1.0 VDS (V) -30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303BDS (L3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2303BDS O-236 OT-23) 08-Apr-05

    Si2303BDS

    Abstract: Si2303BDS-T1 Si2303BDS-T1-E3 L3 marking Si2303BDS SPICE Device Model
    Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 11-Mar-11 L3 marking Si2303BDS SPICE Device Model

    260pF

    Abstract: Si2303ADS Si2303BDS Si2303BDS-T1 Si2303BDS-T1-E3
    Text: Specification Comparison Vishay Siliconix Si2303BDS vs. Si2303ADS Description: P-Channel, 30 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2303BDS-T1 Replaces Si2303ADS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free version) Replaces Si2303ADS-T1


    Original     		PDF Si2303BDS Si2303ADS OT-23 Si2303BDS-T1 Si2303ADS-T1 Si2303BDS-T1-E3 06-Nov-06 260pF

    Si2303BDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2303BDS 0-to-10V 20-Nov-02

    L3 MARKING CODE

    Abstract: No abstract text available
    Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC L3 MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: LTC3706 Secondary-Side Synchronous Forward Controller with PolyPhase Capability DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 3706 is a PolyPhase capable secondary-side controller for synchronous forward converters. When used in conjunction with the LTC3705 gate driver and primaryside controller, the part creates a complete isolated power


    Original     		PDF LTC3706 LTC3705 Cur/LTC1871-1 LTC1871-7 MSOP-10 LTC3803/LTC3803-3 LTC3803-5 200kHz 300kHz LT3575

    SiI3811

    Abstract: AE1421 Mitsubishi DA U31 sc2625 NTC SD-15 DELL DA-2 power supply diagram SSLVC08APWR-GP Wistron Corporation ST470U2D5VDM ICS954226AGLF
    Text: Barbados Block Diagram Intel Mobile CPU Clock Generator ICS954226 /CV140PAG 3 Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz 4,5 Project code:91.4C401.001 PCB P/N :04242 REVISION :SD System DC/DC 400 /533MHz 4.3GB/s HOST BUS 200-PIN DDR2 SODIMM


    Original     		PDF ICS954226 /CV140PAG 73GHz 87GHz/2AGHz/2 /533MHz 4C401 MAX8734A 200-PIN 400/533MHz T93C46 SiI3811 AE1421 Mitsubishi DA U31 sc2625 NTC SD-15 DELL DA-2 power supply diagram SSLVC08APWR-GP Wistron Corporation ST470U2D5VDM ICS954226AGLF

    PDTA144E

    Abstract: lqfp-176 pcb LAYOUT VARTA L2 400 max1909 915gm c838 transistor transistor C730 foxconn transistor c708 transistor C715 Transistor HA17
    Text: 1 A B C 2 3 4 5 6 7 8 Schematics Page Index Title / Revision / Change Date Page Title of Schematics Page Title of Schematics Page Rev. Date Page 01 Title 0.2 050523 26 SCREW HOLE & PAD 02 BLOCK DIAGRAM 0.2 050523 27 MINI-PCI 03 Dothan(HOST BUS) 1/2 0.2 050523 28 LAN (82562ET)


    Original     		PDF 82562ET) CK-410M) KB3910 NV44M) 47ohm. 56ohm MS03-1-01 PDTA144E lqfp-176 pcb LAYOUT VARTA L2 400 max1909 915gm c838 transistor transistor C730 foxconn transistor c708 transistor C715 Transistor HA17

    LDR 90

    Abstract: MLP44-16 Si2303BDS Si7456DP Si7848DP TSSOP-16 SiP11206
    Text: SiP11206 Vishay Siliconix Half-Bridge Controller with Primary MOSFET Drivers for Intermediate Bus Converters DESCRIPTION FEATURES SiP11206 is a controller for the primary side of a half-bridge intermediate bus converter IBC . It is ideally suited for isolated applications such as telecom, data communications


    Original     		PDF SiP11206 18-Jul-08 LDR 90 MLP44-16 Si2303BDS Si7456DP Si7848DP TSSOP-16

    CDM20600

    Abstract: MAX9611 MAX9611AUB 127NC xtal GRM21BR61C106K MAX9612 MAX9612AUB GRM31CR72A105K
    Text: 19-5619; Rev 0; 11/10 MAX9611 Evaluation Kit Features The MAX9611 evaluation kit EV kit is an assembled and tested PCB used to evaluate the MAX9611 high-side current-sense amplifier with an integrated 12-bit ADC and a gain block that can be configured either as an op


    Original     		PDF MAX9611 12-bit MAX9611/MAX9612 CDM20600 MAX9611AUB 127NC xtal GRM21BR61C106K MAX9612 MAX9612AUB GRM31CR72A105K

    Untitled

    Abstract: No abstract text available
    Text: Product is End of Life 3/2014 SiP11205 Vishay Siliconix Feed-Forward Controller with Primary MOSFET Drivers for Intermediate Bus Converters DESCRIPTION FEATURES SiP11205 is a feed-forward controller for the primary side of a half-bridge intermediate bus converter IBC . It is ideally


    Original     		PDF SiP11205 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    80385

    Abstract: No abstract text available
    Text: SiP11206 Vishay Siliconix Half-Bridge Controller with Primary MOSFET Drivers for Intermediate Bus Converters DESCRIPTION FEATURES SiP11206 is a controller for the primary side of a half-bridge intermediate bus converter IBC . It is ideally suited for isolated applications such as telecom, data communications


    Original     		PDF SiP11206 08-Apr-05 80385