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    RFP30 Price and Stock

    Infineon Technologies AG IRFP3006PBF

    MOSFET N-CH 60V 195A TO247AC
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    DigiKey IRFP3006PBF Tube 970 1
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    Infineon Technologies AG IRFP3077PBF

    MOSFET N-CH 75V 120A TO247AC
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    DigiKey IRFP3077PBF Tube 403 1
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    Mouser Electronics IRFP3077PBF 1,147
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    B&K Precision Corporation RFP3008

    RF SENSOR RFM3000 SERIES
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    DigiKey RFP3008 Box 1 1
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    Brady Worldwide Inc RFP300

    (RFP) RFP300, PAD, 15"X19" MED,
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    B&K Precision Corporation RFP3018

    RF SENSOR RFM3000 SERIES
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    DigiKey RFP3018 Box 1
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    Find more RFP30 price and stock on Findchips.com

    RFP30 Datasheets (45)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFP-300-100RN Anaren Flangeless Resistors 300 Watts, 100 Ohms Original PDF
    RFP-300-50TD Anaren Flangeless Termination Original PDF
    RFP3006 B&K Precision 6 GHZ RF POWER SENSOR REAL-TIME Original PDF
    RFP3008 B&K Precision 8 GHZ RF POWER SENSOR REAL-TIME Original PDF
    RFP-30-100R Anaren Flangeless Resistors 30 Watts, 100 Ohms Original PDF
    RFP3018 B&K Precision 18 GHZ RF POWER SENSOR REAL-TIME Original PDF
    RFP3040 B&K Precision 40 GHZ RF POWER SENSOR REAL-TIME Original PDF
    RFP-30-50T Anaren Flangeless Termination 30 Watts, 50 Ohms Original PDF
    RFP3055 Fairchild Semiconductor 12A, 60V, 0.150 ?, N-Channel Power MOSFETs Original PDF
    RFP3055 Harris Semiconductor 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) Original PDF
    RFP3055 Intersil 12A, 60V, 0.150 ?, N-Channel Power MOSFETs Original PDF
    RFP3055 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFP3055LE Fairchild Semiconductor 11A, 60V, 0.107 ?, Logic Level, N-Channel Power Original PDF
    RFP3055LE Harris Semiconductor 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFP3055LE Intersil 11A, 60V, 0.107 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFP3055LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFP3055RLE Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP3055RLE Intersil Obsolete Product Datasheet Scan PDF
    RFP3055RLE Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFP-30A50TP Anaren Flanged Termination 50 Ohms Original PDF

    RFP30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FD3055

    Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. 175oC TB334 FD3055 Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

    FD3055

    Abstract: fp3055 TA49082 IS433 RFD3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. TB334 RFD3055SM RFD3055SM9A136 RFD3055SM9A O-252 FD3055 fp3055 TA49082 IS433 RFD3055

    FD3055

    Abstract: Fp3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF RFD3055, RFD3055SM, RFP3055 FD3055 Fp3055

    f1s30p05

    Abstract: RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334
    Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 50V Formerly developmental type TA09834. Ordering Information PACKAGE 2436.4 Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses


    Original     		PDF RFG30P05, RFP30P05, RF1S30P05SM TA09834. f1s30p05 RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334

    f3055l

    Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. f3055l FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A

    0n06

    Abstract: mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE
    Text: [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan- RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic


    Original     		PDF 0N06L RFP30N06LE, RF1S30N06LESM 0n06 mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE

    FD3055

    Abstract: IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055 RFD3055SM RFP3055
    Text: RFD3055, RFD3055SM RFP3055 S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Features Packaging • 12A, 60V JEDEC TO-220AB TOP VIEW DRAIN (FLANGE) • rDS(ON) = 0.150Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFD3055, RFD3055SM RFP3055 O-220AB 175oC O-251AA RFD3055SM RFP3055 1-800-4-HARRIS FD3055 IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055

    F30N06LE

    Abstract: RFP30N06LE MOSFET 38E-3 TA49027 F30N06L RF1S30N06LESM RFP30N06LE 1S30N06L AN7254 RF1S30N06LE
    Text: RFP30N06LE, RF1S30N06LE, RF1S30N06LESM S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1995 Features Packages JEDEC TO-220AB • 30A, 60V SOURCE DRAIN GATE • rDS ON = 0.047Ω • 2kV ESD Protected


    Original     		PDF RFP30N06LE, RF1S30N06LE, RF1S30N06LESM O-220AB O-262AA RF1S30N06LE performanc39 1e-30 F30N06LE RFP30N06LE MOSFET 38E-3 TA49027 F30N06L RF1S30N06LESM RFP30N06LE 1S30N06L AN7254

    FD3055

    Abstract: IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. FD3055 IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

    F1S30P05

    Abstract: RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334
    Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    Original     		PDF RFG30P05, RFP30P05, RF1S30P05SM TA09834. F1S30P05 RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334

    f3055l

    Abstract: FP3055LE f3055 RFP3055LE
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet Title FD3 5L, D30 LSM November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE f3055l FP3055LE f3055 RFP3055LE

    Untitled

    Abstract: No abstract text available
    Text: RFP3055RLE Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)10 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)


    Original     		PDF RFP3055RLE

    Untitled

    Abstract: No abstract text available
    Text: RFP3055 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)30# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)53# Minimum Operating Temp (øC)-55õ


    Original     		PDF RFP3055

    0N06L

    Abstract: RFP30N06
    Text: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil


    Original     		PDF RFP30N06LE, RF1S30N06LESM 0N06L RFP30N06

    F1S30P06

    Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
    Text: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM


    Original     		PDF RFG30 RFP30P RF1S30 P06SM) O220AB, O262AA, O263AB) RFG30P06, RFP30P06, F1S30P06 RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334

    F1S30P06

    Abstract: F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P
    Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 60V Formerly developmental type TA09834. Ordering Information PACKAGE TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 RF1S30P06SM TO-263AB F1S30P06 • rDS ON = 0.065Ω


    Original     		PDF RFG30P06, RFP30P06, RF1S30P06SM TA09834. O-247 O-220AB O-263AB 175oC TB334 RFP30P06 F1S30P06 F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P

    f3055l

    Abstract: f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs • 11A, 60V Formerly developmental type TA49158. • rDS ON = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. TB334 f3055l f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE

    f3055l

    Abstract: FP3055LE
    Text: ? *3 2 £ RFD3055LE, RFD3055LESM, RFP3055LE 12A, 60V, 0.150 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 12A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFD3055LE, RFD3055LESM, RFP3055LE 150i2 1e-30 06e-3 22e-7) 48e-3 77e-5) 55e-3 f3055l FP3055LE

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		PDF RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 0-065i2 81e-8) 23e-1 97e-3 37e-5) 78e-9

    f3055l

    Abstract: FP3055LE u603 RFP3055LE TA49158
    Text: RFD3055LE, RFD3055LESM, RFP3055LE inter«! D a ta S h e e t N o vem b er 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs F ile N u m b e r 4 0 4 4 .3 Features • 11 A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process


    OCR Scan     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. 107C2 6-S26 AN7260. f3055l FP3055LE u603 RFP3055LE TA49158

    F1S30P05

    Abstract: No abstract text available
    Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0651J RF1S30P05SM F1S30P05

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		PDF RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0-065i2 Operati85e-9 81e-8) 23e-1 97e-3 37e-5)

    p30N06LE

    Abstract: P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0
    Text: m HARRIS RFP30N06LE S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFET MegaFET January 1994 Package Features TO-220AB • 30A.60V TOP VIEW • r DS(ON) - 0.047£2 • 2KV ESD Protected DRAIN


    OCR Scan     		PDF RFP30N06LE O-220AB RFP30N06LE 07e-3 03e-7) 38e-3 64e-5) 75e-3 90e-6) p30N06LE P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0

    30N06LE

    Abstract: 30n06l s1am 30n06 F30N06LE
    Text: fT| HARRIS RFP30N06LE, RF1S30N06LE, S E ",O N O U C T O R RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs J u ly 1 9 9 5 Features Packages JE D EC T 0 -2 2 0 A B • 3 0 A ,6 0 V • r D S O N | =


    OCR Scan     		PDF RFP30N06LE, RF1S30N06LE, RF1S30N06LESM -262A RF1S30N06LE RF1S30N06LESM 576e-4 591e-9 1e-30 30N06LE 30n06l s1am 30n06 F30N06LE