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    BUZ72 Search Results

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    BUZ72 Price and Stock

    Infineon Technologies AG BUZ72A

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    Bristol Electronics BUZ72A 1,450
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    Quest Components BUZ72A 1,160
    • 1 $6.27
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    • 100 $6.27
    • 1000 $3.135
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    Harris Semiconductor BUZ72A

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    Bristol Electronics BUZ72A 120
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    Quest Components BUZ72A 96
    • 1 $6.27
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    • 100 $3.8665
    • 1000 $3.8665
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    . BUZ72L

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    Bristol Electronics BUZ72L 30
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    Vishay Siliconix BUZ72A

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    Bristol Electronics BUZ72A 10
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    Siemens BUZ72

    TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,10A I(D),TO-220AB
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    Quest Components BUZ72 303
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    BUZ72 136
    • 1 $3.132
    • 10 $3.132
    • 100 $2.088
    • 1000 $1.9314
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    ComSIT USA BUZ72 1,248
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    BUZ72 Datasheets (60)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ72 Infineon Technologies SIPMOS Power Transistor Original PDF
    BUZ72 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ72 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ72 Siemens Original PDF
    BUZ72 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ72 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ72 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ72 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ72 Siemens Power Transistors Scan PDF
    BUZ726A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ72A Fairchild Semiconductor TRANS MOSFET N-CH 100V 9A 3TO-220AB Original PDF
    BUZ72A Harris Semiconductor Power MOSFET Selection Guide Original PDF
    BUZ72A Infineon Technologies Power MOSFET, 100V, TO-220, RDSon=0.25 ?, 9A, NL Original PDF
    BUZ72A Intersil 9A, 100V, 0.250 ?, N-Channel Power MOSFET Original PDF
    BUZ72A Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ72A Siemens Original PDF
    BUZ72A Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ72A STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    BUZ72A STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    BUZ72A Toshiba Power MOSFETs Cross Reference Guide Original PDF

    BUZ72 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ72A

    Abstract: TA17401 TB334
    Text: BUZ72A Data Sheet December 2001 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


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    PDF BUZ72A TA17401. O-220Aopment. BUZ72A TA17401 TB334

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


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    PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    BUZ72A

    Abstract: BUZ72A DATASHEET thomson tr 62
    Text: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


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    PDF BUZ72A 100oC 175oC O-220 BUZ72A BUZ72A DATASHEET thomson tr 62

    BUZ72A

    Abstract: TA17401 TB334
    Text: BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching


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    PDF BUZ72A TA17401. BUZ72A TA17401 TB334

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


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    PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    BUZ72A

    Abstract: No abstract text available
    Text: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


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    PDF BUZ72A 100oC 175oC O-220 BUZ72A

    2N4351 MOTOROLA

    Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
    Text: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132


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    PDF 2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76

    BUZ72A

    Abstract: mosfet .5a 100v
    Text: BUZ72A Data Sheet [ /Title BUZ7 2A /Subject (9A, 100V, 0.250 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features


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    PDF BUZ72A O220AB TA17401. BUZ72A mosfet .5a 100v

    complementary of irf830

    Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
    Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3


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    PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary

    BUZ72A

    Abstract: No abstract text available
    Text: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A VDSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY


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    PDF BUZ72A 100oC 175oC O-220 BUZ72A

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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    PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


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    PDF SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64

    4900 SIEMENS

    Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS


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    PDF SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor_ BUZ72 N AMER PHILIPS/DISCRETE ObE D _ • bb53T31 0014430 7 ■ L r - 3 ^ - 1 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF BUZ72 bb53T31 O220AB; T-39-11 bbS3T31 0D14435 bt53T31

    BU272A

    Abstract: BUZ72A
    Text: interrii BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET PART NUMBER BU272A PACKAGE TO-220AB BRAND BUZ72A NOTE: When ordering, use the entire part number. 2262.2 Features • 9A, 100 V This is an N-Channel enhancement mode silicon gate power


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    PDF BUZ72A TA17401. BU272A O-220AB BUZ72A

    schematic diagram UPS

    Abstract: BUZ72A
    Text: rZ 7 SGS-THOMSON BUZ72A 5SlD g[BÏ I!L[l(ginsl©lfflD(gl N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on BUZ72A 100 V 0.25 fi 'd 9 A • 100 VOLTS - FOR UPS APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦


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    PDF BUZ72A O-220 00A/itS schematic diagram UPS BUZ72A

    Z72A

    Abstract: No abstract text available
    Text: BUZ72A O HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor A ug ust 19 91 Features Package T0-220AB • 9 A, 100V TOP VIEW • rDS on = 0 .2 5 il • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds • Linear Transfer Characteristics


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    PDF BUZ72A T0-220AB BUZ72A Z72A

    BUZ900D

    Abstract: BUZ50ASM BUZ50B-220SM
    Text: SEMELAB pic Type_No BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P


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    PDF BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ900D BUZ50B-220SM

    airbag

    Abstract: No abstract text available
    Text: SGS-THOMSON BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ*72A . . . . . . V dss 100 V R d s oo Id 0 .2 5 LI 11 A AVALANCHE RUG G EDNESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALAN C H E DATA AT 100°C LOW GATE CHARGE HIGH CURREN T CAPABILITY


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    PDF BUZ72A airbag

    BUZ72A

    Abstract: 24RZ
    Text: S G S -T H O M S O N BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ72A Voss 100 V ^DS on *D 0.25 ii 9 A • 100 VOLTS - FOR UPS APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ • EASY DRIVE - FOR REDUCED SIZE AND


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    PDF BUZ72A BUZ72A 10OAVs 24RZ

    Untitled

    Abstract: No abstract text available
    Text: BUZ72A Semiconductor Data Sheet June 1999 9A, 100 V, 0.250 Ohm, N-Channel Power MOSFET File Number 2262.2 Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


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    PDF BUZ72A TA17401.

    buz72a

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF b53131 BUZ72A BUZ72A_ T-39-11 0D14443

    BUZ72

    Abstract: V103 TRANSISTOR V103 F5101
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ72 ObE D • ^53^31 ~ 0014430 7 . T - 3*7-1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF BUZ72 bbS3T31 7zms71j bfci53cà 001443b T-39-11 BUZ72 V103 TRANSISTOR V103 F5101