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Fuji Electric Co Ltd 2SK3586-01 Mosfet, N, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:73A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:270W Rohs Compliant: Yes \|Fuji Electric 2SK3586-01
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2SK358 Datasheets (34)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK358	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK358	Toshiba		Original	PDF
2SK358	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK358	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK358	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK358	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK358	Unknown	FET Data Book	Scan	PDF
2SK3580-01MR	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3580-01MR	Fuji Electric	Power Amplifier, 100V 50A 35W, MOS-FET N-Channel enhanced	Original	PDF
2SK358/1	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK3581-01L	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3581-01S	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3581-01SJ	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK358/2	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

2SK3582MFV	Toshiba	2SK3582MFV - Junction FETs(Single)	Original	PDF
2SK3582TK	Toshiba	Field Effect Transistor Silicon N Channel Junction Type For ECM	Original	PDF
2SK3582TV	Toshiba	Silicon N Channel Junction Type For ECM	Original	PDF
2SK3583	Panasonic	FETs, IPD, IGBTs, GaAs MMICs	Original	PDF
2SK358/3	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK3584	Panasonic	FETs, IPD, IGBTs, GaAs MMICs	Original	PDF

2SK358 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C-123 Abstract: 2SK3589-01 n-channel, 75v, 50a Text: 2SK3589-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照	Original	PDF	2SK3589-01 C-123 2SK3589-01 n-channel, 75v, 50a
max 1786 Abstract: Mosfet 100V 50A 2SK3587-01MR n-channel, 75v, 50a Text: 2SK3587-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	PDF	2SK3587-01MR O-220F max 1786 Mosfet 100V 50A 2SK3587-01MR n-channel, 75v, 50a
2SK3580-01MR Abstract: No abstract text available Text: 2SK3580-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply	Original	PDF	2SK3580-01MR O-220F 2SK3580-01MR
2SK3582TV Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range	Original	PDF	2SK3582TV 2SK3582TV
2SK3582TK Abstract: 2SK3582 Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C	Original	PDF	2SK3582TK 2SK3582TK 2SK3582
2SK3582TV Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM Lead Pb -free 1.2±0.05 Rating 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C)	Original	PDF	2SK3582TV 2SK3582TV
2SK3582TK Abstract: ecm circuit Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel JUNCTION Type 2SK3582TK For ECM 0.22±0.05 Rating Unit VGDS -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range	Original	PDF	2SK3582TK 2SK3582TK ecm circuit
T16M Abstract: No abstract text available Text: 2SK3589-01 FUJI POWER MOSFET200303 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern	Original	PDF	2SK3589-01 MOSFET200303 T16M
2SK3587 Abstract: 2sk3587-01mr Text: 2SK3587-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators	Original	PDF	2SK3587-01MR O-220F 2SK3587 2sk3587-01mr
2SK3585 Abstract: 2SK358 Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  High mutual conductance gm	Original	PDF	2002/95/EC) 2SK3585G 2SK3585 2SK358
Untitled Abstract: No abstract text available Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 • VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	PDF	2SK3582MFV
2SK3582TK Abstract: maximum idss transistor 290A transistor transistor marking CG Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range	Original	PDF	2SK3582TK 2SK3582TK maximum idss transistor 290A transistor transistor marking CG
Switching N-Channel Power MOS FET 50a Abstract: 2SK3588-01L 100V 100A mos fet n-channel, 75v, 50a 48v 50a power supply Text: 2SK3588-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply	Original	PDF	2SK3588-01L Switching N-Channel Power MOS FET 50a 100V 100A mos fet n-channel, 75v, 50a 48v 50a power supply
Untitled Abstract: No abstract text available Text: 2SK3586-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	PDF	2SK3586-01 O-220AB

2SK3582CT Abstract: 2SK3582 Text: 2SK3582CT 東芝ジャンクション FET シリコンNチャネル接合形 2SK3582CT エレクトレットコンデンサマイクロフォン用・1.0x0.6×0.38 mmt の CSP パッケージのため小型マイクロフォンに最適・減電圧特性に優れる	Original	PDF	2SK3582CT 100Hz, 100mV 2SK3582CT 2SK3582
2SK3582MFV Abstract: 2SK3582 Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	PDF	2SK3582MFV 2SK3582MFV 2SK3582
2SK3582TK Abstract: No abstract text available Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature	Original	PDF	2SK3582TK 2SK3582TK
Untitled Abstract: No abstract text available Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	PDF	2SK3582MFV
2SK3582 Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj	Original	PDF	2SK3582TV 2SK3582
2SK3582MFV Abstract: No abstract text available Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	PDF	2SK3582MFV 100mV 2SK3582MFV
2sk3585 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  High mutual conductance gm	Original	PDF	2002/95/EC) 2SK3585G 2sk3585
Untitled Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range 0.4 0.4 2 0.3±0.05 3 Unit Gate Current	Original	PDF	2SK3582TV
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	PDF	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
mg15g1al3 Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673	OCR Scan	PDF	2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

2SK358 Search Results

2SK358 Price and Stock

Fuji Electric Co Ltd 2SK3586-01

2SK358 Datasheets (34)

2SK358 Datasheets Context Search

C-123

max 1786

2SK3580-01MR

2SK3582TV

2SK3582TK

2SK3582TV

2SK3582TK

T16M

2SK3587

2SK3585

Untitled

2SK3582TK

Switching N-Channel Power MOS FET 50a

Untitled

2SK3582CT

2SK3582MFV

2SK3582TK

Untitled

2SK3582

2SK3582MFV

2sk3585

Untitled

2SK1118

mg15g1al3