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TE Connectivity ROX2SJ200K RES 200K OHM 5% 2W AXIAL
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DigiKey	ROX2SJ200K	Cut Tape	6,506		1	1 $0.36 10 $0.2 100 $0.1176 1000 $0.08368 10000 $0.08368	Buy Now
	ROX2SJ200K	Ammo Pack	5,000		1,000	1 - 10 - 100 - 1000 $0.07292 10000 $0.0483	Buy Now
Avnet Americas	ROX2SJ200K	Bulk		13 Weeks, 5 Days	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	ROX2SJ200K		12,861			1 $0.34 10 $0.132 100 $0.073 1000 $0.069 10000 $0.051	Buy Now
Newark	ROX2SJ200K	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 $0.058	Buy Now
Avnet Abacus	ROX2SJ200K			18 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	ROX2SJ200K					1 - 10 - 100 - 1000 $0.0742 10000 $0.0559	Buy Now
Panasonic Electronic Components ERG-2SJ200 RES 20 OHM 5% 2W AXIAL
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DigiKey	ERG-2SJ200	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	ERG-2SJ200		1,000			1 - 10 - 100 - 1000 $0.0619 10000 $0.0458	Buy Now
Master Electronics	ERG-2SJ200		1,000			1 - 10 - 100 - 1000 $0.0619 10000 $0.0458	Buy Now
Panasonic Electronic Components ERG-2SJ200V RES 20 OHM 5% 2W AXIAL
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DigiKey	ERG-2SJ200V	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERG-2SJ200A RES 20 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ200A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	ERG-2SJ200A	Bulk			6,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panduit Corp ERG2SJ200E
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Bristol Electronics	ERG2SJ200E		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2SJ200 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ200	Toshiba	Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10)	Original	PDF
2SJ200	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SJ200	Toshiba	P-Channel MOSFET	Original	PDF
2SJ200	Toshiba		Original	PDF
2SJ200	Unknown	FET Data Book	Scan	PDF
2SJ200	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200	Toshiba	Field Effect Transistor Silicon P Channel MOS Type	Scan	PDF
2SJ200	Toshiba	Silicon P channel field effect transistor for high power amplifier applications	Scan	PDF
2SJ200-O	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ200O	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF

2SJ200-Y	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ200Y	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200-Y(F)	Toshiba	2SJ200 - MOSFET P-CH 180V 10A TO-3	Original	PDF

2SJ200 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SJ200 東芝電界効果トランジスタシリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : \|Yfs\|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。	Original	PDF	2SJ200 2SK1529
2SK1529 Abstract: K1529 2SJ200 Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1529 2SJ200 2SK1529 K1529 2SJ200
2SK1529 Abstract: Toshiba 2SJ Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1529 2SJ200 2SK1529 Toshiba 2SJ
Untitled Abstract: No abstract text available Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)	Original	PDF	2SK1529 2SJ200 2-16C1B K1529
2SK1529 Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b
K1529 Abstract: 2SK1529 2SJ200 Toshiba 2SJ Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ
2SJ200 Abstract: 2SK1529 Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529
K1529 Abstract: 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200 Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 180V l High forward transfer admittance : \|Yfs\| = 4.0 S typ. l Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1529 2SJ200 K1529 K1529 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200
2SJ200 Abstract: 2SK1529 transistor application Toshiba 2SJ Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529 transistor application Toshiba 2SJ
K1529 Abstract: 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1529 2SJ200 K1529 K1529 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ
2SJ200 Abstract: 2SJ20 Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ200 2SK1529 2-16C1B 2SJ200 2SJ20
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	PDF	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
TRANSISTOR bH-10 Abstract: marking BH-10 2SJ200 2SK1529 SC-65 Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4 .0 S Typ. • Complementary to 2SK1529	OCR Scan	PDF	2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10
Untitled Abstract: No abstract text available Text: TOSHIBA Discrete Semiconductors 2SJ200 Field Effect Transistor 2 Silicon P Channel M O ST ype L -ti-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance	OCR Scan	PDF	2SJ200

toshiba j200 Abstract: 2SJ200 2SK1529 SC-65 Text: TOSHIBA 2SJ200 SILICON P CHANNEL MOS TYPE 2SJ200 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 1 5.9 M A X. 03.2 ±0.2 X / O — , I- \|l\| r Is 2.° * M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Drain-Souree Voltage vd ss Gate-Souree Voltage vg ss	OCR Scan	PDF	2SJ200 2SK1529 toshiba j200 2SJ200 SC-65
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ200 T O S H IB A FIELD EFFECT TR A N S IS TO R SILIC O N P C H A N N E L M O S TYPE 2SJ200 Unit in mm H IG H P O W E R A M P L IF IE R A P P L IC A T IO N • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.)	OCR Scan	PDF	2SJ200 2SK1529
c 111 transistor Abstract: No abstract text available Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : \| Yfs \| “4.OS (TYP.) . Complementary to 2SJ200	OCR Scan	PDF	2SK1529 2SJ200 Ta-25 Tcm25 SC-65 2-16C1B c 111 transistor
Untitled Abstract: No abstract text available Text: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type rc-MOS II Audio Frequency Power Amplifier Application Features • High Breakdown Voltage - VDSS = -180V (Min.) • High Forward Transfer Admittance - Y fs ' = 4 . O S (T y p .) • Complementary to 2SK1529	OCR Scan	PDF	2SJ200 -180V 2SK1529
2SJ200 Abstract: 6C1B Text: I 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage X5.9MAX 03.2 ±0.2 : V jjss “"180V MIN. . High Forward Transfer Admittance : \| Yfs \| “4.OS (TYP.) r . . Complementary to 2SK1529	OCR Scan	PDF	2SJ200 2SK1529 2SJ200 6C1B
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ200 TO S H IB A FIELD EFFECT TRANSISTOR SILICON P CHANN EL MOS TYPE 2SJ200 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.) Complementary to 2SK1529	OCR Scan	PDF	2SJ200 --180V 2SK1529
toshiba j200 Abstract: No abstract text available Text: T O SH IB A 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 SJ 2QQ Unit in mm HIGH POWER AMPLIFIER APPLICATION 1 5.9 MAX. High Breakdown Voltage : V j}ss= —180V High Forward Transfer Admittance : \|Yfg\| = 4.0S Typ. Complementary to 2SK1529	OCR Scan	PDF	2SJ200 toshiba j200
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm 1 5.9 M A X. • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4.0S Typ. • Complementary to 2SK 1529	OCR Scan	PDF	2SJ200 --180V SC-65 2-16C1B
k1529 Abstract: 2SJ200 2SK1529 SC-65 Text: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION IN D U S T R IA L A P P L IC A T IO N S U n it in mm : V j g g = 180V • H igh Forw ard Transfer Adm ittance : \|Yfs\|= 4.0S Typ.) • Com plem entary to 2SJ200	OCR Scan	PDF	2SK1529 2SJ200 k1529 2SJ200 2SK1529 SC-65
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK1529 SILICON N CHANNEL MOS TYPE High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ. Complementary to 2SJ200 1 5 .9 M A X . 3.3MAX. . , 2.0 • • • INDUSTRIAL APPLICATIONS Unit in mm M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	PDF	2SK1529 2SJ200

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2SJ200 Datasheets (17)

2SJ200 Datasheets Context Search

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2SK1529

2SK1529

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2SK1529

K1529

2SJ200

K1529

2SJ200

K1529

2SJ200

2SK1118

TRANSISTOR bH-10

Untitled

toshiba j200

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c 111 transistor

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2SJ200

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toshiba j200

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k1529

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