MCH3383
Abstract: No abstract text available
Text: MCH3383 Ordering number : EN9000A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3383 Low Voltage Drive Switching Device Applications Features • • • • ON-resistance RDS on 1=57mΩ (typ.) 0.9V drive Halogen free compliance Protection diode in
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EN9000A
MCH3383
PW10s,
900mm2
MCH3383
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ech8 pattern
Abstract: ECH8651R ECH8651R-TL-H ECH8651 A10105
Text: ECH8651R Ordering number : ENA1010A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8651R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor
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ENA1010A
ECH8651R
PW10s,
900mm2
A1010-7/7
ech8 pattern
ECH8651R
ECH8651R-TL-H
ECH8651
A10105
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bb11175
Abstract: BB11172 BB11174 BB1117F4 REG1117 REG1117-2 REG1117-3 REG1117-5 REG1117A
Text: REG1117 REG1117A SBVS001D − OCTOBER 1992 − REVISED JULY 2004 800mA and 1A Low Dropout Positive Regulator 1.8V, 2.5V, 2.85, 3.3V, 5V, and Adjustable FEATURES D FIXED AND ADJUSTABLE VERSIONS D 2.85V MODEL FOR SCSI-2 ACTIVE D D D D D D TERMINATION OUTPUT CURRENT:
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REG1117
REG1117A
SBVS001D
800mA
REG1117:
REG1117A:
800mA
bb11175
BB11172
BB11174
BB1117F4
REG1117
REG1117-2
REG1117-3
REG1117-5
REG1117A
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Untitled
Abstract: No abstract text available
Text: ECH8310 Ordering number : ENA1430 SANYO Semiconductors DATA SHEET ECH8310 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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ECH8310
ENA1430
900mm2Ã
A1430-4/4
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Untitled
Abstract: No abstract text available
Text: SCH1435 Ordering number : ENA1637 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SCH1435 General-Purpose Switching Device Applications Features • • 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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SCH1435
ENA1637
900mm2Ã
A1637-4/4
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Untitled
Abstract: No abstract text available
Text: SCH1331 Ordering number : ENA1530 SANYO Semiconductors DATA SHEET SCH1331 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications
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SCH1331
ENA1530
900mm2Ã
A1530-4/4
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Untitled
Abstract: No abstract text available
Text: CPH6444 Ordering number : ENA1243A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH6444 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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CPH6444
ENA1243A
900mm2â
A1243-4/4
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Untitled
Abstract: No abstract text available
Text: ECH8315 Ordering number : ENA1387 SANYO Semiconductors DATA SHEET ECH8315 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C
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ECH8315
ENA1387
900mm2Ã
A1387-4/4
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Untitled
Abstract: No abstract text available
Text: ECH8663R Ordering number : ENA1184 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.
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ECH8663R
ENA1184
A1184-4/4
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Untitled
Abstract: No abstract text available
Text: CPH6350 Ordering number : ENA1529 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6350 General-Purpose Switching Device Applications Features • • 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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CPH6350
ENA1529
900mm2Ã
A1529-4/4
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8758B MCH6663 Power MOSFET http://onsemi.com 30V, 1.8A, 188mΩ, –30V, –1.5A, 325mΩ, Complementary Dual MCPH6 Features • • • • ON-resistance Nch : RDS on 1=145mΩ(typ.) Pch : RDS(on)1=250mΩ(typ.) 4V drive Halogen free compliance
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EN8758B
MCH6663
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1353B MCH3478 N-Channel Power MOSFET http://onsemi.com 30V, 2A, 165mΩ, Single MCPH3 Features • • • Low ON-resistance 1.8V drive Protection diode in • • Ultrahigh speed switching Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1353B
MCH3478
900mm2Ã
A1353-5/5
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1531A SCH1333 P-Channel Power MOSFET http://onsemi.com –20V, –2A, 130mΩ, Single SCH6 Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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ENA1531A
SCH1333
900mm2Ã
A1531-7/7
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BB11174
Abstract: BB11175 BB1117 BB11172 REG1117 bb11173 5wk9 REG1117-2 REG1117-3 REG1117-5
Text: REG1117 800mA Low Dropout Positive Regulator 2.85V, 3V, 3.3V, 5V, and Adjustable FEATURES APPLICATIONS ● 2.85V, 3V, 3.3V, 5V, and ADJUSTABLE VERSIONS ● SCSI-2 ACTIVE TERMINATION ● HAND-HELD DATA COLLECTION DEVICES ● 2.85V MODEL FOR SCSI-2 ACTIVE
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REG1117
800mA
800mA
OT-223
REG1117
to110
REG1117-5
REF1004-2
BB11174
BB11175
BB1117
BB11172
bb11173
5wk9
REG1117-2
REG1117-3
REG1117-5
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82306
Abstract: marking WZ 3HP04MH A0445
Text: 3HP04MH Ordering number : ENA0445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
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3HP04MH
ENA0445
900mm2
A0445-4/4
82306
marking WZ
3HP04MH
A0445
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3LP04MH
Abstract: No abstract text available
Text: 3LP04MH Ordering number : ENA0551 P-Channel Silicon MOSFET 3LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
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3LP04MH
ENA0551
900mm2
A0551-4/4
3LP04MH
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82306
Abstract: ECH8621R
Text: ECH8621R Ordering number : EN8718 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8621R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.
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ECH8621R
EN8718
900mm2
82306
ECH8621R
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PQ018EH01ZPH
Abstract: 015E PQ015EH01ZPH PQ015EH01ZZH PQ018EH01ZZH PQ025EH01ZPH PQ025EH01ZZH O10F PQXXXEH01ZXH
Text: PQxxxEH01ZxH Series PQxxxEH01ZxH Series Features Low Voltage Operation Low Power-Loss Voltage Regulators • Outline Dimensions Unit : mm 10.6MAX. (0.55) 3.5±0.5 3.28±0.5 (0.6) 6 ø2 015E H01 8.4±0.5 13.7MAX. Lead finish identification mark H (2.4) 1.Low voltage operation
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PQxxxEH01ZxH
O-263
11ZxH
PQ025EH01ZxH
120Hz
3600mm2
900mm2
400mm2
115mm2
PQ018EH01ZPH
015E
PQ015EH01ZPH
PQ015EH01ZZH
PQ018EH01ZZH
PQ025EH01ZPH
PQ025EH01ZZH
O10F
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CPH6621
Abstract: No abstract text available
Text: CPH6621 Ordering number : ENA0847 SANYO Semiconductors DATA SHEET CPH6621 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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CPH6621
ENA0847
900mm20
A0847-4/4
CPH6621
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MCH3314
Abstract: MCH5805 SB01-05
Text: Ordering number : ENN7125 MCH5805 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5805 DC / DC Converter Applications Package Dimensions unit : mm 2195 0.25 [MCH5805] 0.15 0.3 5 3 2 0.65 1 0.07 1.6 4 0.25 Composite type with a P-channel sillicon MOSFET
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ENN7125
MCH5805
MCH5805]
MCH3314)
SB01-05)
MCH3314
MCH5805
SB01-05
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CPH6603
Abstract: No abstract text available
Text: Ordering number : ENN7146 CPH6603 P-Channel Silicon MOSFET CPH6603 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2202 [CPH6603] 0.15 2.9 5 4 0.6 6 0.2 • 0.6 1.6
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ENN7146
CPH6603
CPH6603]
CPH6603
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CPH6601
Abstract: ENN7155 TA-3620
Text: Ordering number : ENN7155 CPH6601 P-Channel Silicon MOSFET CPH6601 Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2202 [CPH6601] 0.15 2.9 5 4 0.6 6
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ENN7155
CPH6601
CPH6601]
CPH6601
ENN7155
TA-3620
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5wk9
Abstract: bb11182 1352B Burr Brown part marking "SCSI Terminators" Burr-Brown IC data book appendix c 1N5817 6730S REG1118 B91007604
Text: REG1118 REG 1118 800mA Low Dropout Positive Regulator with Current Source and Sink Capability FEATURES DESCRIPTION ● SOURCES 800mA, SINKS 400mA ● 2.85V OUTPUT FOR SCSI ACTIVE NEGATION TERMINATION ● 1.3V max DROPOUT VOLTAGE AT IO = 800mA ● INTERNAL CURRENT LIMIT
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REG1118
800mA
800mA,
400mA
800mA
REG1118-2
400mA.
27-line
5wk9
bb11182
1352B
Burr Brown part marking
"SCSI Terminators"
Burr-Brown IC data book appendix c
1N5817
6730S
REG1118
B91007604
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ENA0302
Abstract: ECH8306
Text: ECH8306 Ordering number : ENA0302 P-Channel Silicon MOSFET ECH8306 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage
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ECH8306
ENA0302
900mm2
A0302-4/4
ENA0302
ECH8306
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