M374S1623DT0
Abstract: M374S1623DT0-C7A
Text: M374S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M374S1623DT0 PC133 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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M374S1623DT0
PC133
M374S1623DT0
16Mx72
400mil
M374S1623DT0-C7A
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222k
Abstract: 079R PC-100 PC100-222 KO9018
Text: REVISION DATE REV DESCRPTION ZONE APPVD 6/26/01 III. TIMING I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ W9Q316727KD-222K is a 16Mx72 industry standard 168-pin PC100-222 SDRAM ECC DIMM Manufactured with 18 NEC ELPIDA 8Mx8 400-mil TSOPII-54 100 MHz Synchronous DRAM devices of 12-row, 9-column, 4 -bank addresing.
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W9Q316727KD-222K
16Mx72
168-pin
PC100-222
400-mil
TSOPII-54
12-row,
8Mx72.
W9Q316727KD-222K
D9Q316727KD-222K
222k
079R
PC-100
PC100-222
KO9018
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Untitled
Abstract: No abstract text available
Text: 168PIN PC133 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V6W Description Placement The TS8MLS64V6W is an 8M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS8MLS64V6W consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and
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168PIN
PC133
TS8MLS64V6W
TS8MLS64V6W
PC-133.
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 168Pin PC133 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V6L Description Placement The TS8MLS64V6L is an 8M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS8MLS64V6L consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and
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168Pin
PC133
TS8MLS64V6L
TS8MLS64V6L
PC-133.
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 168PIN PC66 Unbuffered DIMM 128MB with 8Mx8 CL3 TS16MLS64V1WN Description Placement The TS16MLS64V1WN is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS16MLS64V1WN consists of 16pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and
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168PIN
128MB
TS16MLS64V1WN
TS16MLS64V1WN
PC-66.
16pcs
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: PcRam TS16MLE72V6W Transcend Information Inc. Description The TS16MLE72V6W is a 16M bit x 72 Dynamic RAM high density memory module. The TS16MLE72V6W consists of 18pcs CMOS 8Mx8 bit DRAMs and 2pcs 16bits driver mounted on a 168-pin printed circuit board. The TS16MLE72V6W is a Dual In-Line Memory
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TS16MLE72V6W
TS16MLE72V6W
18pcs
16bits
168-pin
216-word
72-bit
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VG36648041DT
Abstract: VS1664648041D VS864648041D
Text: VS864648041D,VS1664648041D 8M,16MX64-Bit SDRAM Module VIS Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4
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VS864648041D
VS1664648041D
16MX64-Bit
VS1664648041D
VG36648041DT)
VS864648041D,
PC100/JEDEC
PC133
VG36648041DT
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E28F00855-1Megx8
Abstract: A1712 AN 5151 28F008S5 EDI7F88MB100S EDI7F88MB120S EDI7F88MB90S
Text: EDI7F88MB 8Meg x 8 Flash Module FIG. 1 BLOCK DIAGRAM EDI7F88MB 8Mx8 DESCRIPTION The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F00855-1Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. A0-A9 W
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EDI7F88MB
EDI7F88MB
E28F00855-1Megx8
120ns
28F008S5
A0-A19
DQ0-DQ31
EDI7F88MB90S
A1712
AN 5151
EDI7F88MB100S
EDI7F88MB120S
EDI7F88MB90S
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Enhanced SDRAM
Abstract: No abstract text available
Text: 64Mbit – Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Preliminary Data Sheet Overview Features • • • • • • • • • • • • • • High Performance 166 MHz Superset to SDRAM 100% Pin Compatible with SDRAM 100% Function and Timing Compatible with JEDEC
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64Mbit
4Mx16
SM2603T-6
SM2604T-6
SM2603T-7
SM2604T-7
SM2603T-10
SM2604T-10
54-pin
Enhanced SDRAM
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SM2603
Abstract: No abstract text available
Text: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz
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64Mbit
4Mx16
16Kbit
166MHz
SM2603T-6
SM2604T-6
SM2603T-7
SM2604T-7
SM2603T-10
SM2604T-10
SM2603
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cmos static ram 1mx8 5v
Abstract: No abstract text available
Text: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V
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K5P6480YCM
1Mx8/512Kx16)
K5P6480TCM-T085
K5P6480YCM-T085
69-Ball
08MAX
cmos static ram 1mx8 5v
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SM3603
Abstract: Enhanced Memory Systems 8mx8 SM3604T-7
Text: 64Mbit – High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While compatible with standard SDRAM, they provide the faster
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64Mbit
4Mx16
SM3603
SM3604
PC-133
SM3603T-7
54-pin
SM3604T-7
Enhanced Memory Systems
8mx8
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Untitled
Abstract: No abstract text available
Text: K3N7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF
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1000B-TC
64M-Bit
/4Mx16)
100ns
120ns
100pF
44-TSOP2-400
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Untitled
Abstract: No abstract text available
Text: K3P7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)@CL=50pF,
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1000B-TC
64M-Bit
/4Mx16)
100/30ns
120/40ns
100pF
44-TSOP2-400
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Untitled
Abstract: No abstract text available
Text: UG58E644 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58E644(8)8HK(S)G is a 8,388,608 bits by 64 EDO DRAM module . The UG58E644(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in 400mil SOJ
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UG58E644
168Pin
400mil
ABT16244
240mil
168-pin
1000mil
190Max
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Untitled
Abstract: No abstract text available
Text: EDI7F88MB 8Megx8 8Megx8 Flash Module The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F008551Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. Block Diagrams EDI7F88MB 8Megx8 The module offers access times between 90 and
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EDI7F88MB
EDI7F88MB
E28F008551Megx8
120ns
28F008S5
A0-A19
DQ0-DQ31
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Untitled
Abstract: No abstract text available
Text: UG58W744 8 8HK(S)G 64M Bytes (8M x 72) DRAM 168Pin DIMM With ECC based on 8M x 8 General Description Features The UG58W744(8)8HK(S)G is a 8,388,608 bits by 72 EDO DRAM module With ECC. The UG58W744(8)8HK(S)G is assembled using 9 pcs of 8Mx8 4K/8K refresh DRAMs in a
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UG58W744
168Pin
168-pin
1250mil)
500Max
100Min
540Min)
010Max
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DS558
Abstract: 6480A6EWS4G09TC
Text: 8M x 64 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 6480A6EWS4G09TC 144 Pin 8Mx64 EDO SODIMM Unbuffered, 4k Self Refresh, 3.3V with SPD General Description Pin Assignment Pin# The 6480A6EWS4G09TC is a 8Mx64 bit, 9 chip, 3.3V, 144 Pin SODIMM module consisting of (8) 8Mx8
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6480A6EWS4G09TC
8Mx64
256x8
A10/AP
DS558-1
DS558
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HYM7V65801BTFG-10S
Abstract: HYM7V65801BTFG HYM7V65801BTFG-10P HYM7V65801BTFG-8
Text: 8Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B F-Series DESCRIPTION The Hynix HYM7V65801B F-Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on
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8Mx64
PC100
HYM7V65801B
8Mx64bits
400mil
54pin
168pin
64Mbytes
HYM7V65801BTFG-10S
HYM7V65801BTFG
HYM7V65801BTFG-10P
HYM7V65801BTFG-8
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M374S1623ET0
Abstract: M374S1623ET0-C1L
Text: M374S1623ET0 PC100 Unbuffered DIMM M374S1623ET0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623ET0 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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M374S1623ET0
PC100
M374S1623ET0
16Mx72
400mil
168-pin
M374S1623ET0-C1L
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HYM7V73A1601BTFG-75
Abstract: No abstract text available
Text: 16Mx72 bits PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V73A1601B F-Series DESCRIPTION The Hynix HYM7V73A1601B F-Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin
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16Mx72
PC133
HYM7V73A1601B
16Mx72bits
400mil
54pin
168pin
128Mbytes
HYM7V73A1601BTFG-75
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HYM7V73A801BTFG-75
Abstract: No abstract text available
Text: 8Mx72 bits PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V73A801B F-Series DESCRIPTION The Hynix HYM7V73A801B F-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP
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8Mx72
PC133
HYM7V73A801B
8Mx72bits
400mil
54pin
168pin
64Mbytes
HYM7V73A801BTFG-75
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MK32VT1664A-8YC
Abstract: No abstract text available
Text: MK32VT1664A-8YC 98.07.17 O K I Semiconductor MK32VT1664A-8YC 16,777,216 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):_ DESCRIPTION The Oki M K32VT1664A-8YC is a fully decoded, 16,777,216 x 64bit synchronous dynam ic random access memory composed of sixteen 64Mb DRAMs (8Mx8) in TSOP
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MK32VT1664A-8YC
MK32VT1664A-8YC
64bit
168-pin
16-Meg
64-bit
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Untitled
Abstract: No abstract text available
Text: Memory Systems Inc. 3 !nd^ st^ TenJPo i S am 64Mbit - High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. The
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64Mbit
4Mx16
SM3603
SM3604
PC-133
3603T-7
54-pin
3604T-7
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