Untitled
Abstract: No abstract text available
Text: ECX-6256-27.000M RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6256 -27.000M Series Ecliptek Custom Crystal Nominal Frequency 27.000MHz ELECTRICAL SPECIFICATIONS
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ECX-6256-27
ECX-6256
000MHz
MIL-STD-883,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: ECX-6256-27.000M TR RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6256 -27.000M TR Series Ecliptek Custom Crystal Packaging Options Tape & Reel
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ECX-6256-27
ECX-6256
000MHz
MIL-STD-883,
MIL-STD-202,
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SG444020
Abstract: SG464020 celduc sg SG464020 CELDUC SG464420 SG444420 photocoupleur potentiometre SG464120 ONTIME10
Text: S/GRA/SG4xxxxx/A/13/03/2000 RELAY WITH PROPORTIONAL CONTROL celduc relais code SG441020 SG444020 SG464120 SG469120 SG468120 Farnell order code 399-6232 399-6244 399-6256 399-6268 399-6270 page 1 /6GB SG4 PHASE ANGLE CONTROLLER This relay has an analog input isolated from the mains, provided to vary the
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S/GRA/SG4xxxxx/A/13/03/2000
SG441020
SG444020
SG464120
SG469120
SG468120
SG444120
SG449020
SG444020
SG464020
celduc sg
SG464020 CELDUC
SG464420
SG444420
photocoupleur
potentiometre
SG464120
ONTIME10
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schematic flash disk
Abstract: ABEL 6256 RAM abel software FLASH370I FLOPPY DISK DATASHEET Sun Disk CY3140 FLASH370 synario
Text: fax id: 6256 1CY 314 0 PRELIMINARY CY3140 ABEL /Synario™ Design Kit for FLASH370i™ Features System Requirements • Device independent design entry formats: — ABEL-HDL for ABEL-4, ABEL-5, and ABEL-6 — Schematic entry, VHDL, and ABEL-HDL for Synario™
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CY3140
FLASH370iTM
FLASH370iTM
FLASH370i
schematic flash disk
ABEL
6256 RAM
abel software
FLOPPY DISK DATASHEET
Sun Disk
CY3140
FLASH370
synario
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Untitled
Abstract: No abstract text available
Text: HLX6256 32K x 8 STATIC RAM The monolithic 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation
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HLX6256
400mW
40MHz
ADS-14228
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Untitled
Abstract: No abstract text available
Text: HX6256 32K x 8 STATIC RAM The monolithic 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems
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HX6256
600mW
40MHz
ADS-14227
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ei3026
Abstract: EI-3026 12 v 100w power amp diagram capacitor power factor correction schematic AN-42047 FEB112-001 APPLICATION OF IC 4007 GBU45 diode bridge bd1 4a 600V 1N4148 75V 150mA Diodes
Text: www.fairchildsemi.com FEB112-001 User’s Guide 100W Power Factor Corrected Supply Featured Fairchild Products: FAN7527B www.fairchildsemi.com/FEBsupport 2005 Fairchild Semiconductor Page 1 of 12 Rev 1.2 May 2005 www.fairchildsemi.com Contents 1. General Board Description .3
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FEB112-001
FAN7527B
ei3026
EI-3026
12 v 100w power amp diagram
capacitor power factor correction schematic
AN-42047
APPLICATION OF IC 4007
GBU45
diode bridge bd1 4a 600V
1N4148 75V 150mA Diodes
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30T-TO-3PF
Abstract: r2a smd transistor diode 1n5401 MMBT3904 SMD FAIRCHILD smd diode r5a smd transistor R5B K10104 P0316 3A, 400V smd BRIDGE-RECTIFIER 500w power amplifier PCB layout
Text: www.fairchildsemi.com FEB108-001 User’s Guide Power Factor Corrected 500W Off-Line Power Supply Featured Fairchild Product: FAN4810 www.fairchildsemi.com/FEBsupport www.fairchildsemi.com Contents 1. General Board Description .3
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FEB108-001
FAN4810
30T-TO-3PF
r2a smd transistor
diode 1n5401
MMBT3904 SMD FAIRCHILD
smd diode r5a
smd transistor R5B
K10104
P0316
3A, 400V smd BRIDGE-RECTIFIER
500w power amplifier PCB layout
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Untitled
Abstract: No abstract text available
Text: HLX6256 32K x 8 STATIC RAM—Low Power The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industrystandard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in low voltage
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HLX6256
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Untitled
Abstract: No abstract text available
Text: HLX6256 32K x 8 STATIC RAM—Low Power The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is
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HLX6256
ADS-14228
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Untitled
Abstract: No abstract text available
Text: HX6256 32K x 8 Static RAM The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation
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HX6256
ADS-14227
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64K X 4 CACHE SRAM
Abstract: 1Mb static ram 6256 RAM dh14 71V432 IDT7MPV6255 IDT7MPV6256 a5 gnd 7MPV6255
Text: 256KB, 512KB, AND 1MB SECONDARY CACHE MODULES FOR THE PowerPC Integrated Device Technology, Inc. PRELIMINARY IDT7MPV6255 IDT7MPV6256 IDT7MPV6266 FEATURES DESCRIPTION • For CHRP based PowerPC systems. • 256KB, 512KB , and 1MB Pipelined Burst SRAM options
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256KB,
512KB,
IDT7MPV6255
IDT7MPV6256
IDT7MPV6266
512KB
ELF178KSC-3Z50
83MHz
7MPV6266
64K X 4 CACHE SRAM
1Mb static ram
6256 RAM
dh14
71V432
IDT7MPV6255
IDT7MPV6256
a5 gnd
7MPV6255
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High Current Driver
Abstract: No abstract text available
Text: Standard ICs 6-channel high current driver BA6256 The BA 6256 is a low voltage, high current driver with six circuits, and is designed for applications such as LE D s, relays, solenoids, and other driver devices which operate at low voltages. This driver is particularly ideal for direct
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BA6256
BA6256
400mA
High Current Driver
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pin configuration of ic cd 4066
Abstract: resistive Humidity Sensor sn1 sensor k1084 capacitor 106 35K RCR Resistor "Humidity Sensor" E0C6256 LCD EPSON 640 x 200 K1013
Text: PF722-04 EPSON E0C6256 4-bit Single Chip Microcomputer Core CPU Architecture R-f Converter Serial Interface • DESCRIPTION The E 0C 6256 is a C M O S 4-bit single-chip microcomputer, built-in core C PU E0C 6200A , RO M , RAM, A/D converter R-f conversion type , SVD circuit, LCD driver, serial interface, watchdog timer, programmable timer,
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PF722-04
E0C6256
E0C6256
E0C6200A,
900kHz)
200pF
QFP5-100pin
QFP5-128pin
pin configuration of ic cd 4066
resistive Humidity Sensor
sn1 sensor
k1084
capacitor 106 35K
RCR Resistor
"Humidity Sensor"
LCD EPSON 640 x 200
K1013
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M5M4256P-15
Abstract: MCM6256 MCM6256-10 M5M4256S-15 M5M4256P M5M4257P-12 MCM6256-12 6256 RAM M5M4256P-20 M5M4257P
Text: - 184 - 2 5 6 K X m & it t, CO n MO S -i V TRAC max ns TRCY rain (ns) TCAD f- > / ins) TAH rain (rs) TP rain (ris) D y n a m i c RAM ft ft T1CY min (ns) (2 6 2 1 4 4 x 1 ) m TDH min (ns) TRWC V D D or V C C (ns) (V) Ä m î DD max (mA) I DD STANDBY ( I SB/ I SB2)
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144x1)
16PIN
LH21257-20
LH21258-10
LH21258-12
10UJITSU
MCM6256-10
MCM6256-12
HCM6256-15
MCM6257B-10
M5M4256P-15
MCM6256
M5M4256S-15
M5M4256P
M5M4257P-12
6256 RAM
M5M4256P-20
M5M4257P
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LC36256-12
Abstract: IC36256-10 3276b DIP28
Text: E m LC 3 6 2 5 6 -1 0 / 1 2 LC 3 6 2 5 6 L-1 0 / 1 2 m m N O . * ñ - jL - x 260^ D 077 toMM'/VX'sr- h CMOS L S I/ 3 2 7 6 8 7 - K X 8 ,t f y "V "V . P 7 ^ RAM CMOS / Ai* IC36256/LC 36256U *32768,7 - l-X 8 P y h«f*ro#NIBOWSÏ^ 'J = » :0/ y/ I•C M O S * * 5* •< •>nAMT’ <to» „
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LC36256-10/12
LC36256L-10/12
LC36256/LC36256U
3e768r7-
LC36256-1G/L-10
120ns
LC36256-12/L-12
LC36P56L-10
LC3G25B-1Q/|
DIP28tf>
LC36256-12
IC36256-10
3276b
DIP28
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Untitled
Abstract: No abstract text available
Text: '993 Tí* PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON I SCHICONDUCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc [ 1 DOl [ 2 D02 E 3 D03 E 4 004 [ 5 • Write Cycle Access _ BYTE or WORD via WE
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MT4C16256/7/8/9
40-Pin
C1993
MT4C162S6/7/V9
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aml 10 series
Abstract: CHIPX LC36256AL LC36256AL-10 LC36256AL-12 LC36256AL-70 LC36256AL-85 LC36256AML-10 LC36256AML-12 LC36256AML-70
Text: [Ordering number: EN4163 Asynchronous Silicon Gate C M O S LSI LC36256AL, AML-70/85/10/12 256 K 32768 words x 8 bits SRAM Overview Package Dimensions T h e L C 3 6 2 5 6 A L , A M L -7 0 /8 5 /1 0 /1 2 are fu lly asynchronous silicon gate CMOS static RAM s with an
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EN4163
LC36256AL,
AML-70/85/10/12
AML-70/85/10/12
LC36256AL-70,
LC36256AML-70
LC36256AL-85,
LC36256AML-85
LC36256AL/AML
aml 10 series
CHIPX
LC36256AL
LC36256AL-10
LC36256AL-12
LC36256AL-70
LC36256AL-85
LC36256AML-10
LC36256AML-12
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t3d01
Abstract: pin configuration of IC 1619 cp LM 3177 C16-256 MT4C16257
Text: PRELIMINARY M T 4C 16256/7/8/9 S 256K X 16 WIDE DRAM |U |I C R O N WIDE DRAM 2 5 6 K X 16 DRAM FAST-PAGE-MODE SELF REFRESH FEATURES OPTIONS P IN A S S IG N M E N T 4 0 -P in S O J T o p 4 0 -P in MARKING • Timing 70ns access -7 80ns access -8 • Write Cycle Access
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512-cycle
MT4C16257/9
MT4C16258/9
MT4C16256/7
MT4C16256/7/0/9
t3d01
pin configuration of IC 1619 cp
LM 3177
C16-256
MT4C16257
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62L33
Abstract: 4096 RAM lcd driver comparator 621C 6232 RAM stopwatch 128 by 64 lcd BLD 128 D
Text: IX. Related Products IX. RELATED PRODUCTS S-MOS carries a line of 4- and 8-bit MCU ICs with built-in LCD drive and control functions, as summarized below. Contact S-MOS for more information. Package *QFP Available Infrared remote control cir cuit, analog comparator,
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32KHz
455KHz
500KHZ
62L81
62L82
62A82
32KHz
62L33
4096 RAM
lcd driver comparator
621C
6232 RAM
stopwatch
128 by 64 lcd
BLD 128 D
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AN6256
Abstract: N5C2
Text: Panasonic ic AN6256 Ä -fe "j h 'T 'ÿ '+ f f l Ê SÄ x — 7 p' b U ^ ^ A u to m a tic fo r • « C a s s e tte Unit : mm V - f - r - t u- 7 9 1 -lS J t? 11 ■ f - - r a a « a i 0 » , n # » -® ' « '* .! !* » , l e d k 7 -r-riggfr i r tl l tV
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AN6256
AN6256
16-Lead
N5C2
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Untitled
Abstract: No abstract text available
Text: Honeywell HTMOS High Temperature Products Advance Information HIGH TEMPERATURE 32K x 8 STATIC RAM FEATURES APPLICATONS • Tested -55 to +225°C, Operation to +300°C • Down-Hole Oil Well • Fabricated with HTMOS™ IV Silicon on Insulator SOI • Avionics
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HT6256
28-Lead
4ssifl72
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)
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HLX6256
1x106ra
1x10l4
1x101
4551A72
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)
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HX6256
1x106rad
1x1014cm
1x109
1x101
28-Lead
4551A72
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