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Bourns Inc 4611X-101-154LF RES ARRAY 10 RES 150K OHM 11SIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4611X-101-154LF	Bulk	2,000		1	1 $0.53 10 $0.302 100 $0.1806 1000 $0.11435 10000 $0.1076	Buy Now
Bristol Electronics	4611X-101-154LF		1,800			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	4611X-101-154LF			18 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bourns Inc 4611X-101-222LF RES ARRAY 10 RES 2.2K OHM 11SIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4611X-101-222LF	Bulk	1,980		1	1 $0.53 10 $0.302 100 $0.1806 1000 $0.11435 10000 $0.1076	Buy Now
Avnet Americas	4611X-101-222LF	Bulk		15 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.11449	Buy Now
RS	4611X-101-222LF	Bulk		17 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.176	Get Quote
TME	4611X-101-222LF		1,225			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Abacus	4611X-101-222LF			18 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	4611X-101-222LF					1 - 10 - 100 - 1000 $0.1669 10000 $0.1233	Buy Now
Bourns Inc 4611X-101-271LF RES ARRAY 10 RES 270 OHM 11SIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4611X-101-271LF	Bulk	1,965		1	1 $0.67 10 $0.378 100 $0.2257 1000 $0.14293 10000 $0.10821	Buy Now
Avnet Americas	4611X-101-271LF	Bulk		15 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.11449	Buy Now
Mouser Electronics	4611X-101-271LF		2,120			1 $0.63 10 $0.263 100 $0.187 1000 $0.125 10000 $0.123	Buy Now
Newark	4611X-101-271LF	Bulk			2,000	1 - 10 - 100 - 1000 $0.129 10000 $0.118	Buy Now
RS	4611X-101-271LF	Bulk		17 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.176	Get Quote

Bristol Electronics	4611X-101-271LF		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	4611X-101-271LF			18 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	4611X-101-271LF					1 - 10 - 100 - 1000 $0.1722 10000 $0.1248	Buy Now
Bourns Inc 4611X-101-332LF RES ARRAY 10 RES 3.3K OHM 11SIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4611X-101-332LF	Bulk	1,965		1	1 $0.67 10 $0.378 100 $0.2257 1000 $0.14293 10000 $0.10821	Buy Now
Avnet Americas	4611X-101-332LF	Bulk		15 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.11449	Buy Now
Newark	4611X-101-332LF	Bulk			2,000	1 - 10 - 100 - 1000 $0.129 10000 $0.118	Buy Now
RS	4611X-101-332LF	Bulk		17 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.13	Get Quote
Avnet Abacus	4611X-101-332LF			18 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	4611X-101-332LF					1 - 10 - 100 - 1000 $0.1722 10000 $0.1248	Buy Now
Bourns Inc 4611X-101-471LF RES ARRAY 10 RES 470 OHM 11SIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4611X-101-471LF	Bulk	1,921		1	1 $0.67 10 $0.378 100 $0.2257 1000 $0.14293 10000 $0.10821	Buy Now
Avnet Americas	4611X-101-471LF	Bulk		15 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.11449	Buy Now
Mouser Electronics	4611X-101-471LF		2,014			1 $0.65 10 $0.263 100 $0.187 1000 $0.132 10000 $0.123	Buy Now
Newark	4611X-101-471LF	Bulk			2,000	1 - 10 - 100 - 1000 $0.129 10000 $0.118	Buy Now
RS	4611X-101-471LF	Bulk		17 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.176	Get Quote

Avnet Abacus	4611X-101-471LF			18 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	4611X-101-471LF					1 - 10 - 100 - 1000 $0.1722 10000 $0.1248	Buy Now

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1X101 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor m285 Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650 Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
prom 238A790 Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)	Original	PDF	238A790 2x105 1x1012 28-Lead 28C256 AT28C256. AS9000, prom 238A790 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite BAE Systems
238A792 Abstract: No abstract text available Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	238A792 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, 238A792
190A325 Abstract: C710 D 5962h96877 Text: 190A325 198A592 128K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	190A325 198A592 5962H96877 40-Lead 32-Lead 1x106 1x1014 1x109 1x10-11 C710 D 5962h96877
prom 238A790 Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE Text: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free	Original	PDF	238A790 28-Lead 2x105 1x1012 28C256 AT28C256. AS9000, x5040) prom 238A790 AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
S4 46 Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833 Text: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	225A833 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, S4 46 AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
HX84050 Abstract: No abstract text available Text: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2	Original	PDF	HX84050 1x1014 1x109 1x1011 1x10-10 200-Lead HX84050
CQFj 44 Abstract: CQFJ 68 lead CQFJ Text: WS128K32-25G2SMX 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • Access Time of 25ns ■ Radiation Tolerant • Total Dose Hardness through 1x106 rad SiO2 ■ Neutron Hardness through 1x1014 cm-2 ■ Dynamic and Static Transient Upset Hardness through	Original	PDF	WS128K32-25G2SMX 128Kx32 1x106 1x1014 1x1011 1x1012 1x10-10 WS128K32-25AR 128Kx32 CQFj 44 CQFJ 68 lead CQFJ
A1760 Abstract: 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	238A792 64-Lead 1x106 1x1014 1x109 1x10-11 AS9000, A1760 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE
HXNV01600 Abstract: No abstract text available Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness 1x1010 rad(Si)/s Dose Rate Survivability 1x1012 rad(Si)/s Soft Error Rate ≤ 1x10-10 upsets/bit-day	Original	PDF	HXNV01600 1x106 1x1010 1x1012 1x10-10 1x1014 ADS-14229 HXNV01600
197A807 Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4 Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)	Original	PDF	197A807 2x105 1x1012 5962R96891 28-Lead 28C256 AT28C256. AS9000, 197A807 BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
Untitled Abstract: No abstract text available Text: PRELIMINARY HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On n 150 nm Process Leff = 130 nm n Total Dose Hardness n Dose Rate Upset Hardness ≥ 1x109 rad(Si)/s Dose Rate Survivability ≥ 1x1012 rad(Si)/s	Original	PDF	HXNV01600 1x106 1x109 1x1012 1x10-10 1x1014 1x1015
BAE Systems Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML Text: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	209A542 1x106 1x1014 1x109 1x10-11 40-Lead AS9000, BAE Systems AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML
transistor B885 Abstract: 201A072 225A837 B885 Text: 201A072 225A837 256K x 8 Radiation Hardened Static RAM MCM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	201A072 225A837 1x106 1x1014 1x109 1x10-11 1x1012 5962H99541 40-Lead AS9000, transistor B885 201A072 225A837 B885

Untitled Abstract: No abstract text available Text: D-HR Series High Insulation Resistance, High Voltage Relays -10kV & 15kV 10kV or 15kV Isolation Low Contact Resistance 1x1014 Ohms Minimum Insulation Resistance PCB or Flying Leads Connections Ideal for sensitive test and measurement circuits which require low leakage current losses	Original	PDF	-10kV 1x1014 DAT71210F-HR) ISO9001
Untitled Abstract: No abstract text available Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	203A665 5962H98615 40-Lead 1x106 1x1014 1x109 1x10-11 1x1012 AS9000, x5040)
LT1012 spice model Abstract: LT1012 500E LT1024 Text: /'TLTTCAB SPICE MACROMODELS TECHNOLOGY 1X1012 Macromodel Linear Technology LT1012 op amp model with calls for LT1024 Written: 09-05-1989 16:53:38 Type: Bipolar npn input, internal comp. Typical specs: Vos-l.OE-OS, I b = 3 .0E-11, I o s = 2 .0E-11, G B P = 6 .0E+05Hz, Phase mar.= 70 deg,	OCR Scan	PDF	U1012 LT1012 LT1024) 0E-05, 0E-11, 0E-01V/us, 9E-01V/us, 380uA LT1012 spice model 500E LT1024
Untitled Abstract: No abstract text available Text: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)	OCR Scan	PDF	1x10e 1x101 36-Lead 28-Lead HC6856 1E-10
RAD HARD TRENCH TRANSISTOR Abstract: No abstract text available Text: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 FEATURES RADIATION • Fabricated with R IC M O S1“ Silicon on Insulator SOI 1.2 (im process • Total Dose Hardness through 1x10 e rad (S i0 2) • Neutron Hardness through 1x1014 cm 2 OTHER	OCR Scan	PDF	1x101 PIN23 HX6464/1 HX6464/2 HX6464/3 RAD HARD TRENCH TRANSISTOR
Untitled Abstract: No abstract text available Text: Honeywell A dvance Information HC83240 128K X 32 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Automatic "Fly-By" Error Detect and Correct EDC for any single and double bit errors • Neutron Hardness through 1x1014 crrr2	OCR Scan	PDF	1x101 HC83240 SEL17 SEL18 SEL19 SEL20 SEL21 SEL22
Untitled Abstract: No abstract text available Text: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)	OCR Scan	PDF	HC6364 1x106 1x1014cm
Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)	OCR Scan	PDF	HX9100 1x101 1x1012rad 1x101/cm2 HX9100 4SS1A72
Untitled Abstract: No abstract text available Text: Honeywell Advance Information 256K x 16 RADIATION-TOLERANT SRAM HC81640 FEATURES R A D IA TIO N OTHER • Total D ose H ardness at Tactical Level • Detects and Corrects All Single and Double Bit Errors Automatically • Neutron H ardness through 1x1014 cm 2	OCR Scan	PDF	1x101 HC81640
harris 6616 Abstract: No abstract text available Text: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2	OCR Scan	PDF	1x106 1x1014c 1x109 1x101 24-Lead HC6616/1 HC6616/2 harris 6616

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1X101 Price and Stock

Bourns Inc 4611X-101-154LF

Bourns Inc 4611X-101-222LF

Bourns Inc 4611X-101-271LF

Bourns Inc 4611X-101-332LF

Bourns Inc 4611X-101-471LF

1X101 Datasheets Context Search

transistor m285

prom 238A790

238A792

190A325

prom 238A790

S4 46

HX84050

CQFj 44

A1760

HXNV01600

197A807

Untitled

BAE Systems

transistor B885

Untitled

Untitled

LT1012 spice model

Untitled

RAD HARD TRENCH TRANSISTOR

Untitled

Untitled

Untitled

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harris 6616