WCs MARKING
Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation
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5116400BJ-50/-60
5117400BJ-50/-60
3116400BJ/BT-50/-60
3117400BJ-50/-60
400BJ-50/-60
400BJ/BT-50/-60
P-TSOPII-26/24-1
GPX05857
WCs MARKING
SMD MARKING code ASC
SMD MARKING CODE RAC
5117400
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MSM5117400
Abstract: No abstract text available
Text: O K I Semiconductor 5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.
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MSM5117400
304-Word
MSM5117400
cycles/32ms
capab40
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Untitled
Abstract: No abstract text available
Text: HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T433D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16 Mbit DRAM (HM 5117400BTS/BLTS) sealed in TSOP package. An outline of the HB56T433D is 72-pin
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HB56T433D
304-word
32-bit
ADE-203Rev.
5117400BTS/BLTS)
72-pin
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Q907
Abstract: Q67100-Q915 Q554b
Text: SIEM ENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:
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5117400AJ-50/-60/-70/-80
5117400ASJ-50/-60/-70/-80
235b05
D0SSH72
Q907
Q67100-Q915
Q554b
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version
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5117400BJ
5117400BT
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Untitled
Abstract: No abstract text available
Text: M UT" >5" 5 HB56A441BR Series 4,194,304-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 1,1994 HITACHI The HB56A441BR is a 4 M x 40 dynamic RAM m odule, m ounted 10 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A441BR is 72-pin single in
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HB56A441BR
304-Word
40-Bit
117400A
72-pin
HB56A441BR-6A
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Untitled
Abstract: No abstract text available
Text: HM5116400 Series 5117400 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-648D Z Rev. 4.0 Jun. 12, 1997 Description The Hitachi H M 5116400 Series, H M 5117400 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced 0.5 |Jm CMOS technology for high performance and low power.
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HM5116400
HM5117400
304-word
ADE-203-648D
300-mil
26-pin
ns/70
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ALRS8
Abstract: No abstract text available
Text: m iir 1^ 2 , 5117400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 5117400A /A L is a CMOS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high p erform ance and low pow er. The
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HM5117400A/AL
304-word
117400A
HM5117400AS/ALS-6
HM5117400AS/ALS-7
HM5117400AS/ALS-8
300-mil
24/26-pin
CP-24DB)
ALRS8
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Untitled
Abstract: No abstract text available
Text: HB56D836 Series 8 ,3 8 8 ,6 0 8 -w o r d x 3 6 -b lt H ig h D e n s ity D y n a m ic R A M M o d u le The HB56D 836 is a 8 M x 36 dynam ic RAM module, mounted 16 pieces of 16-Mbit DRAM HM 5117400AS sealed in SOJ package and 8 pieces of 4-M bit DRAM (H M 514100B S/C S)
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HB56D836
HB56D
16-Mbit
5117400AS)
514100B
72-pin
HB56D836BR-6A
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 A d v a n c e d In fo rm a tio n • 4 194 30 4 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % sup ply • 0 to 70 C o p e ra tin g te m p e ra tu re Low p o w e r dissip a tio n
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5117400BJ
5117400BT
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MSM5117400
Abstract: No abstract text available
Text: O K I Semiconductor MSC23436-xxBS12/DS12 4,194,304-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23436-xxBS12/D S12 is a fully decoded 4,194,304-word x 36-bit CM OS Dynamic Random Access M em ory M odule composed of eight 16-Mb DRAM s in SOJ M SM 5117400 packages and four 4-Mb
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MSC23436-xxBS12/DS12
304-Word
36-Bit
MSC23436-xxBS12/DS12
16-Mb
MSM5117400)
MSM514100B)
72-pin
MSM5117400
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23432-xxBS8/DS8 .rimUflMlMGy 4,194,304-Word by 32-Bit Dynamic RAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23432-xxB S8/D S8 is a fully decoded 4,194,304-w ord x 32-bit CM O S D ynam ic Random Access Mem ory M odule com posed of eight 16-Mb DRAMs in SOJ M SM 5117400 packages mounted with
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MSC23432-xxBS8/DS8
304-Word
32-Bit
23432-xxB
304-w
16-Mb
72-pin
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marne
Abstract: MSM5117400
Text: O K I Semiconductor MSC23832-XXBS16/DS16 [PygOfl^DGUSlD^? 8,388,608-Word by 32-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23832-xxBS16/D S16 is a fully decoded 8,388,608-word x 32-bit CM OS dynamic Random Access Memory module composed of sixteen 16-Mb DRAM s in SOJ M SM 5117400 packages mounted
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MSC23832-xxBS16/DS16
608-Word
32-Bit
MSC23832-xxBS16/DS16
16-Mb
MSM5117400)
72-pin
marne
MSM5117400
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5117400BJ-50
Abstract: wd71
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: • • • • • • • • -50 -60 -70 ^RAC RAS access time 50 60 70 ns ÍCAC
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5117400BJ
P-SOJ-26/24
5117400BJ-50/-60/-70
85max
5117400BJ-50
wd71
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: ^RAC RAS access time -50 -60 -70 50 60 70 ns ns fcAC CAS access time 13 15 20 ^AA
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5117400BJ
5117400BJ-50/-60/-70
P-SOJ-26/24
85max
fl23Sb05
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23832-XXBS16/DS16 PrüüSifiííflDWf 8,388,608-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23832-xxBS16/D S16 is a fully decoded 8,388,608-w ord x 32-bit CM OS dynamic Random Access Memory module com posed of sixteen 16-Mb DRAM s in SOJ M SM 5117400 packages mounted
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MSC23832-XXBS16/DS16
608-Word
32-Bit
23832-xxBS16/D
608-w
16-Mb
72-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23836-XXBS24/DS24 í!'T C ítóíi® ¡rf 8,388,608-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23836-xxBS24/D S24 is a fully decoded 8,388,608-w ord x 36-bit CM OS Dynamic Random Access Memory Module com posed of sixteen 16-Mb DRAMs in SOJ M SM 5117400 packages and eight 4Mb DRAMs in SOJ (M SM 514100B) packages mounted with tw enty-four 0.2|j,F decoupling capacitors on a
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MSC23836-XXBS24/DS24
608-Word
36-Bit
23836-xxBS24/D
608-w
16-Mb
514100B)
72-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17400 A 4,194,304-Word x 4-Bit D YNAM IC RAM : FAST PAGE M O DE TYPE D E S C R IP T IO N The 5117400A is a new generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the M SM 5117400A is O K I's C M O S silicon gate process technology.
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304-Word
MSM5117400A
304-w
117400A
cycles/32ms
MSM5117400A
A0-A10
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Untitled
Abstract: No abstract text available
Text: S IE M E N S 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Prelim inary Information • • • 4 194 304 words by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time:
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OCR Scan
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PDF
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5117400AJ-50/-60/-70/-80
5117400ASJ-50/-60/-70/-80
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Untitled
Abstract: No abstract text available
Text: HM5116400 Series 5117400 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-648C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM 5116400 Series, HM 5117400 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced 0.5 (J.m CMOS technology for high performance and low power.
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OCR Scan
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PDF
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HM5116400
HM5117400
304-word
ADE-203-648C
300-mil
26-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M SM 5117400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 5117400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 5117400A achieves high integration, high-speed operation, and low-power
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117400A
304-Word
MSM5117400A
194354-word
26/24-pin
cycles/32
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TAA 785 A IC
Abstract: No abstract text available
Text: The M S M 5117400 is a 16 M eg ab it d y n am ic m em ory o rgan ized a s 4 ,1 9 4 ,3 0 4 w o rd b y 4 b it. T h e tech n ology used to fab ric ate the M S M 5 1 1 7 4 0 0 is O K I's C M O S silicon ga te p ro c e ss tech n ology . T h e device o p erates at a single + 5 V p ow er su p p ly . A ll in pu ts an d o u tp u ts are T T L co m p atib le.
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MSM5117400
28-pin
TAA 785 A IC
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HB56A841BR-6A
Abstract: D8553
Text: HB56A841BR Series 8,388,608-Word x 40-Btt High Density Dynamic RAM Module HITACHI The HB56A841BR is a 8 M x 40 dynamic RAM m odule, m ounted 20 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A841BR is 72-pin single in
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HB56A841BR
608-Word
40-Btt
117400A
72-pin
HB56A841BR-6A
D8553
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5117400B
Abstract: in9668 HM5117400BLS-6 HM5117400BS6
Text: 5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi 5117400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM 5117400B offers Fast Page Mode
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HM5117400B
304-word
ADE-203-369A
5117400B
mW/550
mW/495
B400B
HM511740
HM5M7400B
in9668
HM5117400BLS-6
HM5117400BS6
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