2SB0942
Abstract: 2SB0942A 2SD1267 2SD1267A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc
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2002/95/EC)
2SD1267,
2SD1267A
2SB0942
2SB0942A
2SD1267
O-220F-A1
2SB0942A
2SD1267
2SD1267A
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2SB1418
Abstract: 2SB1418A 2SD2138 2SD2138A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington Unit: mm 4.2±0.2 10.0±0.2 M Di ain sc te on na tin nc ue e/ d 1.0±0.2 • Absolute Maximum Ratings TC = 25°C
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2002/95/EC)
2SB1418,
2SB1418A
2SB1418
2SB1418
2SB1418A
2SD2138
2SD2138A
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2SB0946
Abstract: 2SD1271
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
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2002/95/EC)
2SD1271
2SB0946
SC-67
O-220F-A1
2SB0946
2SD1271
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2SB1299
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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2002/95/EC)
2SB1299
2SB1299
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2SB0944
Abstract: 2SD1269
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
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2002/95/EC)
2SD1269
2SB0944
SC-67
O-220F-A1
2SB0944
2SD1269
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching 5.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 150 V Collector-emitter voltage (Base open)
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2002/95/EC)
2SD1271A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0934 (2SB934) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For Power switching Complementary to 2SD1257 • Package • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SB0934
2SB934)
2SD1257
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1175 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1745 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 12.6±0.3 7.2±0.3 1.0±0.2 0.75±0.1 0.4±0.1
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2002/95/EC)
2SB1175
2SD1745
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) Silicon PNP epitaxial planar type For low-voltage switching 16.7±0.3 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching
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2002/95/EC)
2SB0948
2SB948)
2SB0948A
2SB948A)
2SB0948
2SB0948A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SD1271
2SB0946
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE
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2002/95/EC)
2SD1750,
2SD1750A
2SB1180
2SB1180A
2SD1750
2SD1750A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm Parameter Collector-base voltage (Emitter open) 16.7±0.3 Symbol Rating Unit VCBO 350
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2002/95/EC)
2SD1263,
2SD1263A
2SD1263
2SD1263A
2SD126nteed
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A 0.9±0.1 0˚ to 0.15˚
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2002/95/EC)
2SD1749,
2SD1749A
2SB1179
2SB1179A
2SD1749
2SD1749A
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1071A 5.5±0.2 4.2±0.2 2.7±0.2 14.0±0.5 • Absolute Maximum Ratings TC = 25°C φ 3.1±0.1 Rating Unit Collector-base voltage Emitter open VCBO
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2SD1539A
2SB1071A
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2sb1750
Abstract: No abstract text available
Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE • High-speed switching • I type package enabling direct soldering of the radiating fin to the
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2SD1750,
2SD1750A
2SB1180
2SB1180A
2SD1750
2SD1750A
2sb1750
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2sc3979
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage
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2002/95/EC)
2SC3979,
2SC3979A
2SC3979
2SC3979A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type darlington For power amplification Complementary to 2SB1418 and 2SB1418A 4.2±0.2 Unit: mm • Absolute Maximum Ratings TC = 25°C
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2002/95/EC)
2SD2138,
2SD2138A
2SB1418
2SB1418A
2SD2138
2SD2138A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching • Features 1.0±0.2 5.0±0.1 M Di ain sc te on na tin nc ue e/ d 2.5±0.1 13.0±0.2 • High-speed switching
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2002/95/EC)
2SC4892
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2B4B41
Abstract: 4b41 2J4B41 2J4B J4B41 2G4B41
Text: SILICON DIFFUSED TYPE RECTIFIER STACK O SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS. • Average O utput Rectified C urrent : I o = 2.0A • Repetitive Peak Reverse Voltage : 2 B,G,J 4B41 = 100—600V POLARITY (-)» o( + ) (-)» O (-) M A X IM U M RATINGS SYMBOL
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2B4B41
2G4B41
2J4B41
70x70x2m
50x50x2m
4b41
2J4B
J4B41
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ic 301
Abstract: 2SD1535
Text: Power Transistors 2SD1535 b132fl52 001b7Sa MbO 2S D 1535 Package D im ensions Unit ; mm Silicon NPN Triple Diffused Planar Darlington Type High Power A m plifier • Features • • • • Very good linearity o f DC current gain Iiff High collector-base voltage (VCbo)
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b132fl52
001b7Sa
2SD1535
100X100X2mm
ic 301
2SD1535
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Untitled
Abstract: No abstract text available
Text: TO SH IBA SM8G45,SM8J45,SM8G45A,SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : V d r m = 400, 600V R.M.S On-State Current : It RMS —8A
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SM8G45
SM8J45
SM8G45A
SM8J45A
SM8G45,
SM8J45,
SM8G45A,
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB952, 2SB952A 2SB952, 2SB952A Silicon PNP Epitaxial Planar Type Package Dimensions Unit ! mm Low Voltage Switching •i Features 3.7max. l.lmr—ax.* 8.? max. 6.5 max. • Low collector-eimitter saturation voltage VcEisau • High speed switching
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2SB952,
2SB952A
2SB952
2SB052A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA SM8LZ47 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR <; m a i SILICON PLANAR TYPE a. 7 7 Unit in mm AC PO W ER CONTROL APPLICATIONS 10.3MAX. • Repetitive Peak Off-State Voltage V dRM • R.M.S. On-State Current i T RM S = • High Commutation (dv / dt)
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SM8LZ47
50x50x2m
70x70x2m
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2SB553
Abstract: No abstract text available
Text: TO SH IBA 2SB553 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB553 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 10.3MAX, Low Collector Saturation Voltage : v CE(sat)= —0.4V (Max.) at 1C= -4 A
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2SB553
2SD553.
2SB553
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