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IXYS Corporation DE275-501N16A Rf Mosfet, N Channel, 500V, De-275; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Power Dissipation:590W; Operating Frequency Min:-; Operating Frequency Max:100Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°Crohs Compliant: Yes \|Ixys Rf DE275-501N16A
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501N16A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.	Original	PDF	DE275X2-501N16A DE275X2-501N16A
DE275X2-501N16A Abstract: No abstract text available Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in	Original	PDF	DE275X2-501N16A DE275X2-501N16A
DE275X2-501N16A Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2 Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.	Original	PDF	DE275X2-501N16A DE275X2-501N16A "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
DE275-102N06A Abstract: DE375-102N10A DE375-501N16A Text: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.	Original	PDF	DE375-501N16A DE275-102N06A DE375-102N10A DE275-102N06A DE375-102N10A DE375-501N16A
DE275-501N16A Abstract: 92-0002 DE275-501N16 Text: Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	DE275-501N16A DE275-501N16A 92-0002 DE275-501N16
DE275-501N16A Abstract: 501N16A gsm Handset Circuit Diagram PIN diode SPICE model Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500	Original	PDF	DE275-501N16A DE275-501N16A 501N16A gsm Handset Circuit Diagram PIN diode SPICE model
DE275-501N16A Abstract: KP58 Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE275-501N16A DE275-501N16A KP58
DE375-501N16A Abstract: No abstract text available Text: Directed Energy, Inc. An DE375-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500	Original	PDF	DE375-501N16A DE375-501N16A