irf*234 n
Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5
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4flSS455
irf*234 n
IRFBE40
IRF540 p-channel MOSFET
IRFBG40
irf540 800v
irfz24 mosfet
IRFCG50
IRFC034
HEXFET Guide
international rectifier d10
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D0205AB
Abstract: D0-205AB
Text: 4855452 INTERNATIONAL RECTIFIER IO R in t e r n a t i o n a l 73 73C 07174 D T"-*/-2-3 Data Sheet No. PD-2.136 r e c t if ie r D E | 4 f l 5 S 4 S e 0007174 T R23D & R23DR SERIES 1400 - 800 VOLTS RANGE 315 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES
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R23DR
D0-205AB
R23DR12A.
4flSS455
00D717fl
D0205AB
D0-205AB
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Untitled
Abstract: No abstract text available
Text: ÜÛ55452 ÜGlS2Sb 32e! • INR International fc Rectifier IRFIBE20G HEXFET® Power MOSFET • • • • • p d -9.853 b5E D INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating
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IRFIBE20G
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Untitled
Abstract: No abstract text available
Text: , I Q R , _ IN T E R N A T IO N A L R E C T IF IE R Data Sheet imo. _ _ INTERNATIONAL RECTIFIER 4855452 02 h u -3 .u98 D e | 4 A 5 5 4S 2 D 0 D 7 7 7 3 ‘i | INTERNATIONAL RE CT IF IE R
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S34BH
S34B4A
S34BH4A
T0-200AC
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hant
Abstract: No abstract text available
Text: 4855452 INTERNATIONAL RECTI F I E R IJORJ IN T E R N A T IO N A L 02E 07651 R E C TII=lgH 05 f ” D Hoto C hant /? Ma PD-3.123 DE|4flSS4SE aD07L,Sl b | ~ S23D & S23DH SERIES 400-200 VOLTS RANGE 370 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs
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aD07L
S23DH
209AB
T0-209AB
hant
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10RIF10W
Abstract: 16RIF10W 16RIF60W
Text: SS INTERNATIONAL RECTIFIER 4855452 dF | m ö SSMS2 0004043 □ | 55C 0 4 8 4 3 INTERNATIONAL RECTIFIER Data Sheet No. PD-3.176 Y- INTERNATIONAL RECTIFIER IÖR 2 10RIF/I6RIF,20RIF SERIES 16A,S5A,3SA RMS Medium Power Fast Turn-off Thyristors Major Ratings and Characteristics
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10RIF
16RIF
20RIF
60JHz
10RIF,
Source-20fl
10RIF10W
16RIF10W
16RIF60W
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IRF250
Abstract: IRF252
Text: HE 0 I 4ÖSS45S G G C m i a Data Sheet No. PD-9.321H ö I INTERNATIONAL R E C T I F I E R I«R INTERNATIONAL RECTIFIER T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF250 IRF251 IRF252 IRF253 N-CHANNEL Product Summary 200 Volt, 0.085 Ohm HEXFET
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SS45S
T-39-13
IRF250
IRF251
IRF252
IRF253
O-204AE
IRF250,
IRF251,
IRF252,
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125OC
Abstract: 250R
Text: INTERNATIONAL RECTIFIER IO R in t e r n a t io n a l 73 ÏËfl 4ÛS54SS □ O□ bTT5 □ T -2,5-/? Data Sheet No. PD-3.157 RecTiFiER S23AF SERIES 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 fjs 380 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs
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4AS54S5
S23AF
S23AF
1400Vt
S23AF14A.
Q007000
T0-200AB
125OC
250R
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s1bc
Abstract: EC120 ELNE FS18C
Text: INTERNATIONAL RECTIFIER 05 DE~| 4ÛSS45E DODTbDT 7 | I IÇ?K 1i n t e r n a t i o n a l , r e c t i f i e r T-25-19 Data Sheet No. PD-3.121 S18C & S18CH SERIES 1200-600 VOLTS RANGE 165 AMP RMS, CENTER AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS
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T-25-19
S18CH
O-209AC
209AC
208AD
s1bc
EC120
ELNE
FS18C
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