Intersil ignition IGBT
Abstract: 350VVGE
Text: HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2000 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Title This N-Channel IGBT is a MOS gated, logic level device GT1 which is intended to be used as an ignition coil driver in 4N4 automotive ignition circuits. Unique features include an
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HGT1S14N41G3VLS,
HGTP14N41G3VL
TA49360.
Intersil ignition IGBT
350VVGE
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IRF044SM
Abstract: No abstract text available
Text: SEME IRF044SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 34A 0.040W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF
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IRF044SM
220SM
00A/ms
300ms,
IRF044SM
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Intersil ignition IGBT
Abstract: No abstract text available
Text: HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2000 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Title This N-Channel IGBT is a MOS gated, logic level device GT1 which is intended to be used as an ignition coil driver in 4N4 automotive ignition circuits. Unique features include an
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HGT1S14N41G3VLS,
HGTP14N41G3VL
TA49360.
O-220AB
HGTP14N41G3VL
Intersil ignition IGBT
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6718v
Abstract: IRF044
Text: IRF044 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)
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IRF044
300ms,
6718v
IRF044
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IRFN5210
Abstract: No abstract text available
Text: IRFN5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN5210
-100V
300ms,
IRFN5210
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diode IN 34A
Abstract: irfxxx
Text: SEME IRFN044 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 34A Ω 0.040Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF
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IRFN044
220SM
300ms,
diode IN 34A
irfxxx
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Untitled
Abstract: No abstract text available
Text: IRF044 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)
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IRF044
300ms,
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to276
Abstract: No abstract text available
Text: SEME IRF044SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRF044SMD
IRFN044"
IRFN044SMD
IRFN044SMD-JQR-B
O276AB)
2400pF
130nC
130nC
to276
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IRFN5210
Abstract: IRF5210SMD
Text: IRFN5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN5210
-100V
300ms,
IRFN5210
IRF5210SMD
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diode IN 34A
Abstract: IRF044SMD
Text: SEME IRF044SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRF044SMD
00A/ms
300ms,
diode IN 34A
IRF044SMD
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Intersil ignition IGBT
Abstract: 14N41 555 igbt driver HGT1S14N41G3VLT HGT1S14N41G3VLS HGTP14N41G3VL TB334
Text: [ /Title HGT1 S14N4 1G3V LS, HGTP 14N41 G3VL /Subjec t (14A, 410V NChann el, Logic Level, Voltag e Clampi ng IGBTs ) /Autho r () /Keyw ords (14A, 410V NChann el, Logic Level, Voltag e Clampi ng IGBTs, HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2001
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S14N4
14N41
HGT1S14N41G3VLS,
HGTP14N41G3VL
Intersil ignition IGBT
14N41
555 igbt driver
HGT1S14N41G3VLT
HGT1S14N41G3VLS
HGTP14N41G3VL
TB334
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RAD-HARD igbt
Abstract: transformers 14 H 1a 380 v radiation hardened IGBT Intersil ignition IGBT BTS 425 bts 425 l1 Rad Hard in Fairchild for Diodes Rad Hard in Fairchild for MOSFET 14N4 ASTRO 211 MOSFET
Text: HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2000 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Title This N-Channel IGBT is a MOS gated, logic level device GT1 which is intended to be used as an ignition coil driver in 4N4 automotive ignition circuits. Unique features include an
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HGT1S14N41G3VLS,
HGTP14N41G3VL
TA49360.
RAD-HARD igbt
transformers 14 H 1a 380 v
radiation hardened IGBT
Intersil ignition IGBT
BTS 425
bts 425 l1
Rad Hard in Fairchild for Diodes
Rad Hard in Fairchild for MOSFET
14N4
ASTRO 211 MOSFET
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Untitled
Abstract: No abstract text available
Text: S EM E IRF044SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRF044SMD
00A/ms
300ms,
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Untitled
Abstract: No abstract text available
Text: S EM E IRFN044SMD LA B MECHANICAL DATA N–CHANNEL POWER MOSFET VDSS ID cont RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )
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IRFN044SMD
00A/ms
300ms,
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HGT1S14N41G3VLS
Abstract: HGT1S14N41G3VLS9A HGTP14N41G3VL TB334 intersil ignition Intersil ignition IGBT
Text: HGT1S14N41G3VLS, HGTP14N41G3VL TM Data Sheet September 2000 File Number 4887 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Features This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in
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Original
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PDF
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HGT1S14N41G3VLS,
HGTP14N41G3VL
TA49360.
HGT1S14N41G3VLS
HGT1S14N41G3VLS9A
HGTP14N41G3VL
TB334
intersil ignition
Intersil ignition IGBT
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HGT1S14N41G3VLS
Abstract: HGT1S14N41G3VLS9A HGTP14N41G3VL TB334 ignition coil
Text: HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet December 2001 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Features This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an
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Original
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PDF
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HGT1S14N41G3VLS,
HGTP14N41G3VL
TA49360.
HGTP14N41G3VL
HGT1S14N41G3VLS
HGT1S14N41G3VLS9A
TB334
ignition coil
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IRFN044SMD
Abstract: No abstract text available
Text: SEME IRFN044SMD LAB MECHANICAL DATA N–CHANNEL POWER MOSFET VDSS ID cont RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in .
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IRFN044SMD
00A/ms
300ms,
IRFN044SMD
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IRF044
Abstract: No abstract text available
Text: IRF044 SEIN/IE LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET . _ 3ajsg.S73i 30.^0 (1 ’ 97) 30.15(i.iaf) i r.13(O.C75I ! (U.&55) I TS(0.tsi) V DSS 60V 1D(cont) 44A 7 è 1'; 2- dia. 2OK». ,-J ^D S (on) - â à
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OCR Scan
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IRF044
00A/J1S
300ms,
IRF044
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Untitled
Abstract: No abstract text available
Text: n il É tti IN I IRF044 SEM E LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET V DSS 60V ID(cont) 44A 0.028Q ^D S (on) FEATURES M 20.32 (0.800) * 118.80 a an in i a <w (0.740) • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ • SIMPLE DRIVE REQUIREMENTS
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OCR Scan
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IRF044
340mJ
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IRF044SM
Abstract: No abstract text available
Text: Illl E ^ i Illl SEME IRF044SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 4- V Dss 60V ^D(cont) 34A 3.0 ,r<” 3.5 •4 ► 0.25 I 2.0 0 .0 4 0 0 RpS(on) v r t1 1 ITT-1- FEATURES 3 • HERMETICALLY SEALED SURFACE MOUNT PACKAGE
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OCR Scan
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IRF044SM
040ft
O-220SM
300ms,
fll331fl7
IRF044SM
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Untitled
Abstract: No abstract text available
Text: im itti mi SEME IRFN044 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 60V 34A DSS 0.25 I D(cont) 3.0 0.040Q ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS
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OCR Scan
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IRFN044
O-220SM
300ms,
000150b
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Untitled
Abstract: No abstract text available
Text: Illl W . mi SEME IRFN044 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 60V 34A 0.040ft VDSS 11.5 0.25 I D(cont) 3.0 ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS
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OCR Scan
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IRFN044
040ft
O-220SM
340mJ
300ms,
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Untitled
Abstract: No abstract text available
Text: 1111 E^E INI SEM E IRF044 LAB MECHANICAL DATA D im ensions in m m inches N-CHANNEL POWER MOSFET 3 9 .9 5 ( 1 .5 7 3 ) 3 0 .4 0 ( 1 . 1 97 ) 30 .1 5 ( 1 . 1 87 ) 17.15 ( 0 . 6 7 5 ) 16.64 ( 0 .6 5 5 ) V DSS D(cont) R DS(on) 60V 44A 0.028Í2 FEATURES • HERMETICALLY SEALED TO-3 METAL
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OCR Scan
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IRF044
340mJ
300ms,
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