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    Untitled

    Abstract: No abstract text available
    Text: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed


    Original     		PDF 200PIN 256MB 32Mx16 TS32MSQ64V4M TS32MSQ64V4M 64bits DDR2-400 32Mx16its 200-pin

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 256MB 32Mx16 TS32MMQ64V5M TS32MMQ64V5M 64bits DDR2-533 32Mx16bits

    DDR2-667

    Abstract: PC2-5300 SSTL-18
    Text: NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM • Performance:


    Original     		PDF NT256T64UH4A1FY 256MB: 240pin 32Mx16 240-pin 32Mx64 84-ball DDR2-667 PC2-5300 SSTL-18

    7F7F7F0B00000000

    Abstract: PC2-5300 PC2-6400 NT512T64UH8B0FN NT1GT64U8HB0BN-3C 32MX16
    Text: NT256T64UH4B0FN / NT512T64UH8B0FN NT1GT64U8HB0BN 256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 32Mx16/64Mx8 SDRAM B-Die Features • Performance:


    Original     		PDF NT256T64UH4B0FN NT512T64UH8B0FN NT1GT64U8HB0BN 256MB: 512MB: PC2-4200 PC2-5300 PC-6400 DDR2-533/667/800 32Mx16/64Mx8 7F7F7F0B00000000 PC2-6400 NT512T64UH8B0FN NT1GT64U8HB0BN-3C 32MX16

    Untitled

    Abstract: No abstract text available
    Text: 172PIN DDR2 400 Micro-DIMM 512MB With 32Mx16 CL3 TS512MPA0512U Description Placement The TS512MPA0512U is a 64M x 64bits DDR2-400 Micro-DIMM. The TS512MPA0512U consists of 8pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed


    Original     		PDF 172PIN 512MB 32Mx16 TS512MPA0512U TS512MPA0512U 64bits DDR2-400 32Mx16bits 172-pin

    Untitled

    Abstract: No abstract text available
    Text: 172PIN DDR2 400 Micro-DIMM 256MB With 32Mx16 CL3 TS256MPA0256U Placement Description The TS256MPA0256U is a 32M x 64bits DDR2-400 Micro-DIMM. The TS256MPA0256U consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed


    Original     		PDF 172PIN 256MB 32Mx16 TS256MPA0256U TS256MPA0256U 64bits DDR2-400 32Mx16bits 172-pin

    OTB-400-1

    Abstract: No abstract text available
    Text: MEMORY MODULE SDRam 64Mx48-SOP 3DSD2G64VB4488 Synchronous Dynamic Ram MODULE 2Gbit SDRAM organized as 32Mx64, based on 32Mx16 Pin Assignment Top View BGA 119 (8x15 - Pitch : 1.27mm) Features - Stack of four 512Mbit SDRam. - Organized as 32Mx64bit. - Single +3.3V power supply.


    Original     		PDF 64Mx48-SOP 3DSD2G64VB4488 32Mx64, 32Mx16 512Mbit 32Mx64bit. 3DFP-0488-REV OTB-400-1

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE SDRAM 32Mx64-BGA DATA SHEET SYNCHRONOUS DRAM MODULE 3DSD2G64VB4383 2-Gbit SDRAM organized as 32Mx64, based on 32Mx16 Features - Stack of four 512Mbit SDRAM. - Organized as 32Mx64bit. - High frequency: 133Mhz - Single +3.3V power supply. - Fully synchronous; all signals registered on


    Original     		PDF 32Mx64-BGA 3DSD2G64VB4383 32Mx64, 32Mx16 512Mbit 32Mx64bit. 133Mhz 3DDS-0383-2

    Untitled

    Abstract: No abstract text available
    Text: SG564323578NZ3R December 21, 2005 Ordering Information Module Part Numbers Description SG564323578NZ3R 32Mx64 256MB , SDRAM, 144-pin SODIMM, Unbuffered, Non-ECC, 32Mx16 Based, PC133, CL 3.0, 25.40mm, Green Module (RoHS Compliant). Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]


    Original     		PDF SG564323578NZ3R SG564323578NZ3R 32Mx64 256MB) 144-pin 32Mx16 PC133,

    SG564323FG8N0UU

    Abstract: No abstract text available
    Text: SG564323FG8N0UU May 19, 2006 Ordering Information Part Numbers Description Module Speed SG564323FG8N0DB 32Mx64 256MB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 32Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0


    Original     		PDF SG564323FG8N0UU SG564323FG8N0DB 32Mx64 256MB) 240-pin 32Mx16 DDR2-400-333, SG564323FG8N0UU

    IS42S16320D-7TLI

    Abstract: IS42S16320D is42s16320 IS42S16320D-7BL IS42S86400D-7TL IS42S16320D-7TL IS45S16320D-7TLA1 IS42S16320D-5TL IS45S16320D-7TLA2 is42s86400
    Text: IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 PRELIMINARY INFORMATION JUNE 2011 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge


    Original     		PDF IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 512Mb IS42/45SxxxxxD IS42/45RxxxxxD IS42/45R86400D/16320D/32160D, IS42S16320D-7TLI IS42S16320D is42s16320 IS42S16320D-7BL IS42S86400D-7TL IS42S16320D-7TL IS45S16320D-7TLA1 IS42S16320D-5TL IS45S16320D-7TLA2 is42s86400

    W3DG6433V-D1

    Abstract: No abstract text available
    Text: White Electronic Designs W3DG6433V-D1 256MB – 32Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION Burst Mode Operation The W3DG6433V is a 32Mx64 synchronous DRAM module which consists of four 32Mx16 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8


    Original     		PDF W3DG6433V-D1 256MB 32Mx64 W3DG6433V 32Mx16 W3DG6433V-D1

    HY27USXX121M

    Abstract: package tsop1 512MBIT hynix nand HY27US HY27 HY27SSXX121M
    Text: HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary 0.1 Renewal Product Group


    Original     		PDF HY27SS HY27US 512Mbit 64Mx8bit 32Mx16bit) 512Mb HY27USXX121M package tsop1 512MBIT hynix nand HY27 HY27SSXX121M

    AS4C32M16S-7AI

    Abstract: TSOP 54 II
    Text: Datasheet | Rev. 1.1 | 2012 512Mbit Single-Data-Rate SDR SDRAM AS4C64M8S-7TCN 64Mx8 (16M x 8 x 4 Banks) AS4C32M16S-7TCN 32Mx16 (8M x 16 x 4 Banks) Datasheet Version 1. 1 1 512 Mbit SDRAM AS4C[08/16] Revision History R Rev. 1.1 April 2012 Revised Operating-; Standby- and Refresh Currents


    Original     		PDF 512Mbit AS4C64M8S-7TCN 64Mx8 AS4C32M16S-7TCN 32Mx16 AS4C32M16S-7AI TSOP 54 II

    DPSD32MX16WY5

    Abstract: No abstract text available
    Text: 32Mx16, 7.5 - 15ns, P12, M-Densus 30A231-00 A M-Densus 512 Megabit Synchronous DRAM 32MX16WY5 High Density Memory Device ADVANCED INFORMATION DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of


    Original     		PDF 32Mx16, 30A231-00 DPSD32MX16WY5 DPSD32MX16WY5 53A001-00

    Untitled

    Abstract: No abstract text available
    Text: NT256T64UH4A1FN / NT512T64UH8A1FN 256MB: 32M x 64 / 512MB: 64M x 64 PC2-4200 / PC2-5300 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on DDR2-533/667 32Mx16 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • 32Mx64 and 64Mx64 Unbuffered DDR2 SO-DIMM based on


    Original     		PDF NT256T64UH4A1FN NT512T64UH8A1FN 256MB: 512MB: PC2-4200 PC2-5300 DDR2-533/667 32Mx16 200-Pin 32Mx64

    HY5PS121621BFP

    Abstract: HY5PS121621B HY5PS121621BFP-2
    Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS121621BFP 512Mb 32Mx16) 1HY5PS121621BFP 300Mhz 400Mhz 500MHz 84Ball HY5PS121621BFP HY5PS121621B HY5PS121621BFP-2

    H5MS5162

    Abstract: H5MS5162DFR h5ms5162dfr-j3m hynix mcp DDR333 DDR370 DDR400
    Text: 512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O Specification of 512Mb 32Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512Mbit 512Mb 32Mx16bit) 512Mbit 16bit) H5MS5162DFR 16bits) H5MS5162 h5ms5162dfr-j3m hynix mcp DDR333 DDR370 DDR400

    Untitled

    Abstract: No abstract text available
    Text: HY5PS121621BFP 512Mb 32Mx16 DDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS121621BFP 512Mb 32Mx16) 1HY5PS121621BFP 300Mhz 400Mhz 500MHz 450MHz/500MHz)

    Untitled

    Abstract: No abstract text available
    Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS121621BFP 512Mb 32Mx16) 1HY5PS121621BFP 300Mhz 400Mhz 500MHz 450MHz/500MHz)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary


    Original     		PDF HY27SS HY27US 512Mbit 64Mx8bit 32Mx16bit)

    NT5TU32M16BG

    Abstract: No abstract text available
    Text: NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx8 & 32Mx16 DDR2 SDRAM B Die Features • Performance: PC2-4200 PC2-5300 PC2-6400


    Original     		PDF NT256T64UH4B0FY NT512T64U88B0BY NT1GT64U8HB0BY 256MB: 512MB: 240pin 64Mx8 32Mx16 PC2-4200 PC2-5300 NT5TU32M16BG

    Untitled

    Abstract: No abstract text available
    Text: NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM • Performance:


    Original     		PDF NT256T64UH4A1FY 256MB: 240pin 32Mx16 240-pin 32Mx64 PC2-5300 333MHz SSTL-18

    eeprom 34c

    Abstract: M1N25664TUH4A2F
    Text: M1N25664TUH4A2F-37B Green M1N51264TUH8A2F-37B (Green) 256MB: 32M x 64 / 512MB: 64M x 64 PC2-4200 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on DDR2-533 32Mx16 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)


    Original     		PDF M1N25664TUH4A2F-37B M1N51264TUH8A2F-37B 256MB: 512MB: PC2-4200 DDR2-533 32Mx16 200-Pin 32Mx64 64Mx64 eeprom 34c M1N25664TUH4A2F