2SK363 Search Results

2SK363 Result Highlights (5)

Part	Manufacturer	Description
2SK3634-AZ	Renesas Electronics Corporation	Switching N-Channel Power Mosfet, MP-3, /Bag
2SK3634-Z-AZ	Renesas Electronics Corporation	Switching N-Channel Power Mosfet
2SK3635-Z-E1-AZ	Renesas Electronics Corporation	Switching N-Channel Power Mosfet, MP-3Z, /Embossed Tape
2SK3635-AZ	Renesas Electronics Corporation	Switching N Channel MOSFET, MP-3, /Bag
2SK3635-Z-AZ	Renesas Electronics Corporation	Switching N-Channel Power Mosfet, MP-3Z, /Bag

2SK363 Price and Stock

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Rochester Electronics LLC 2SK3634-AZ MOSFET N-CH 200V 6A TO251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3634-AZ	Bulk			360	1 - 10 - 100 - 1000 $0.83 10000 $0.83	Buy Now
Rochester Electronics LLC 2SK3635-Z-AZ SMALL SIGNAL N-CHANNEL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3635-Z-AZ	Bulk			254	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Buy Now
Rochester Electronics LLC 2SK3634-Z-AZ 6A, 200V, N-CHANNEL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3634-Z-AZ	Bulk			332	1 - 10 - 100 - 1000 $0.91 10000 $0.91	Buy Now
Rochester Electronics LLC 2SK3635-Z-E1-AZ MOSFET N-CH 200V 8A TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3635-Z-E1-AZ	Bulk			254	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Buy Now
Renesas Electronics Corporation 2SK3635-Z-E1-AZ Trans MOSFET N-CH 200V 8A 3-Pin(2+Tab) TO-252 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK3635-Z-E1-AZ		8,000		281	1 - 10 - 100 - 1000 $1.2113 10000 $1.2113	Buy Now
Rochester Electronics	2SK3635-Z-E1-AZ		8,000		1	1 $1.14 10 $1.14 100 $1.07 1000 $0.969 10000 $0.969	Buy Now

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2SK363 Datasheets (36)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK363	InterFET	N-Channel silicon junction field-effect transistor	Original	PDF
2SK363	Toshiba	Field Effect Transistor Silicon N Channel Junction Type	Original	PDF
2SK363	Unknown	FET Data Book	Scan	PDF
2SK363	Toshiba	FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE	Scan	PDF
2SK363	Toshiba	Silicon N channel field effect transistor for audio amplifier, analog switch, constant current and impedance converter applications	Scan	PDF
2SK363	Toshiba	Junction FETs	Scan	PDF
2SK3633	Toshiba	FETs - Nch 700V	Original	PDF
2SK3633	Toshiba	Field Effect Transistor Silicon N Channel MOS Type	Original	PDF
2SK3633	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK3634	Kexin	N-Channel MOSFET	Original	PDF
2SK3634	NEC	N-ch power MOS FET (switching element)	Original	PDF
2SK3634	NEC	Switching N-Channel Power MOS FET	Original	PDF
2SK3634-Z	NEC	SWITCHING N-CHANNEL POWER MOSFET	Original	PDF
2SK3634-Z	NEC	Switching N-Channel Power MOS FET	Original	PDF

2SK3635	Kexin	N-Channel MOSFET	Original	PDF
2SK3635	NEC	N-ch power MOS FET (switching element)	Original	PDF
2SK3635-Z	NEC	SWITCHING N-CHANNEL POWER MOSFET	Original	PDF
2SK3636	Kexin	N-Channel Power MOSFET	Original	PDF
2SK3636	Panasonic	TRANS MOSFET N-CH 800V 3A 3TO-220D-A1	Original	PDF
2SK3636	TY Semiconductor	N-Channel Power MOSFET - TO-263	Original	PDF

2SK363 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK3637 Abstract: No abstract text available Text: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3637 1 .2 7 -0+ 0.1.1 TO-263 Features Low on-resistance, low Qg Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1	Original	PDF	2SK3637 O-263 2SK3637
ciss Abstract: 2SK3635 Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3635 TO-252 Features High voltage: VDSS = 200 V Gate voltage rating: +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 30 V Low Ciss: Ciss = 390 pF TYP. Built-in gate protection diode	Original	PDF	2SK3635 O-252 ciss 2SK3635
2SK3636 Abstract: No abstract text available Text: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3636 TO-263 Avalanche energy capacity guaranteed: EAS 20 mJ +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 No secondary breakdown +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2	Original	PDF	2SK3636 O-263 2SK3636
Untitled Abstract: No abstract text available Text: 2SK3633 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV 2SK3633 ○ スイッチングレギュレータDC−DC コンバータ ○ モータドライブ用単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。	Original	PDF	2SK3633
2SK3638 Abstract: 2SK3638-ZK Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE	Original	PDF	2SK3638 2SK3638 2SK3638-ZK O-252 O-252) 2SK3638-ZK
toshiba a114 Abstract: 2SK3633 SC-65 K3633 200VW Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.2 S (typ.)	Original	PDF	2SK3633 toshiba a114 2SK3633 SC-65 K3633 200VW
Untitled Abstract: No abstract text available Text: NEW PRODUCTS 5 NEW SERIES OF POWER MOSFETs FOR DC 48 V INPUT DC-DC CONVERTER 2SK3634/2SK3635/µPA1740TP Masahiro Haizumi* This series of N-channel power MOSFETs with a drain-source voltage VDSS rated at 200 V is ideal for the on-board DC-DC converter (on-board power supply) of	Original	PDF	2SK3634/2SK3635/ PA1740TP O-251 O-252 PC1909, PA2700 PD1740TP 2SK3634-Z 2SK3635-Z PC1093,
2SK3559 Abstract: IDA-20 Text: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal	Original	PDF	2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 2SK3628 2SK3559 2SK3665 2SK3637 2SK3652 E00128AE IDA-20
2SK3637 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm φ 3.2±0.1 For PDP/For high-speed switching Symbol Rating Unit Drain-source surrender voltage VDSS 200 V VGSS ±30 V Drain current	Original	PDF	2002/95/EC) 2SK3637 2SK3637
Untitled Abstract: No abstract text available Text: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	PDF	2SK363 SC-43
TO-252 MP-3ZK Abstract: 2SK3638 2SK3638-ZK Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE	Original	PDF	2SK3638 2SK3638 2SK3638-ZK O-252 O-252) TO-252 MP-3ZK 2SK3638-ZK
2SK3633 Abstract: SC-65 Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.2 S (typ.)	Original	PDF	2SK3633 2SK3633 SC-65
2SK3633 Abstract: K3633 VDD400 SC-65 Text: 2SK3633 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV 2SK3633 ○ スイッチングレギュレータDC−DC コンバータ ○ モータドライブ用単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。	Original	PDF	2SK3633 SC-65 2-16C1B 2SK3633 K3633 VDD400 SC-65
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SK3636 TO-263 Avalanche energy capacity guaranteed: EAS 20 mJ +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 No secondary breakdown +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2	Original	PDF	2SK3636 O-263

2SK3638 Abstract: No abstract text available Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3638 TO-252 Low Ciss: Ciss = 1100 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max 3.80 MAX. VGS = 4.5 V, ID = 18 A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 15 m Unit: mm +0.1	Original	PDF	2SK3638 O-252 2SK3638
2SK3634-Z Abstract: 2SK3634 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3634 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3634 is N-channel MOS FET device that features PART NUMBER PACKAGE 2SK3634 TO-251 MP-3 2SK3634-Z TO-252 (MP-3Z) a low on-state resistance and excellent switching	Original	PDF	2SK3634 2SK3634 O-251 2SK3634-Z O-252 O-251/TO-252 O-251) 2SK3634-Z
d1593 Abstract: 2SK3635 2SK3635-Z Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3635 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3635 is N-channel MOS FET device that features PART NUMBER PACKAGE 2SK3635 TO-251 MP-3 2SK3635-Z TO-252 (MP-3Z) a low on-state resistance and excellent switching	Original	PDF	2SK3635 2SK3635 O-251 2SK3635-Z O-252 O-251/TO-252 O-251) d1593 2SK3635-Z
2SK363 Abstract: 2SK363 transistor Text: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	PDF	2SK363 2SK363 2SK363 transistor
2SK3637 Abstract: No abstract text available Text: Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm φ 3.2±0.1 For PDP/For high-speed switching Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 200 V VGSS ±30 V Drain current ID 50 A Peak drain current IDP 200 A EAS 2 000 mJ PD	Original	PDF	2SK3637 2SK3637
2SK3634 Abstract: mosfet 60a 200v Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3634 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 High voltage: VDSS = 200 V Low Ciss: Ciss = 270 pF TYP. VDS = 10 V, VGS = 0 V Built-in gate protection diode	Original	PDF	2SK3634 O-252 2SK3634 mosfet 60a 200v
2sk152 equivalent Abstract: 2SJ44 2SK113 2SK152 Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters	OCR Scan	PDF	2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent 2SJ44 2SK113 2SK152
transistor gds Abstract: No abstract text available Text: TOSHIBA 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR i <; SILICON N CHANNEL JUNCTION TYPE \c 3 ft 3 FOR AUDIO AM PLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND U nit in mm IMPEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage • TTicrVi— Tnm it Tmr>prl»nr»p	OCR Scan	PDF	2SK363 transistor gds
2SK363 Abstract: No abstract text available Text: TO SH IB A 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK363 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage : V j u g = —40V • High Input Impedance : lQ g g = —l.OnA (Max.	OCR Scan	PDF	2SK363 SC-43
Untitled Abstract: No abstract text available Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c\|u ivalen ^ F ^ n h £\|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit	OCR Scan	PDF	2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L

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2SK363 Search Results

2SK363 Result Highlights (5)

2SK363 Price and Stock

Rochester Electronics LLC 2SK3634-AZ

Rochester Electronics LLC 2SK3635-Z-AZ

Rochester Electronics LLC 2SK3634-Z-AZ

Rochester Electronics LLC 2SK3635-Z-E1-AZ

Renesas Electronics Corporation 2SK3635-Z-E1-AZ

2SK363 Datasheets (36)

2SK363 Datasheets Context Search

2SK3637

ciss

2SK3636

Untitled

2SK3638

toshiba a114

Untitled

2SK3559

2SK3637

Untitled

TO-252 MP-3ZK

2SK3633

2SK3633

Untitled

2SK3638

2SK3634-Z

d1593

2SK363

2SK3637

2SK3634

2sk152 equivalent

transistor gds

2SK363

Untitled