2SK36 Search Results

2SK36 Result Highlights (5)

Part	Manufacturer	Description
2SK3664-T1-A	Renesas Electronics Corporation	Nch Single Power Mosfet 20V 0.5A 570Mohm Usm/Sc-75
2SK3634-AZ	Renesas Electronics Corporation	Switching N-Channel Power Mosfet, MP-3, /Bag
2SK3642-ZK-E1-AZ	Renesas Electronics Corporation	Switching N-Channel Power Mosfet
2SK3653-T1-A	Renesas Electronics Corporation	Switching N-Channel Power Mosfet
2SK3659-AZ	Renesas Electronics Corporation	Switching N Channel MOSFET, MP-45F, /Bag

2SK36 Price and Stock

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Rochester Electronics LLC 2SK3617-E NCH 4V DRIVE SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3617-E	Bulk			544	1 - 10 - 100 - 1000 $0.55 10000 $0.55	Buy Now
Rochester Electronics LLC 2SK3634-AZ MOSFET N-CH 200V 6A TO251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3634-AZ	Bulk			360	1 - 10 - 100 - 1000 $0.83 10000 $0.83	Buy Now
Toshiba America Electronic Components 2SK3662(F) MOSFET N-CH 60V 35A TO220NIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3662(F)	Bulk			50	1 - 10 - 100 $1.4574 1000 $1.4574 10000 $1.4574	Buy Now
Rochester Electronics LLC 2SK3635-Z-AZ SMALL SIGNAL N-CHANNEL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3635-Z-AZ	Bulk			254	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Buy Now
Rochester Electronics LLC 2SK3615-TL-E N-CHANNEL SILICON MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3615-TL-E	Bulk			410	1 - 10 - 100 - 1000 $0.73 10000 $0.73	Buy Now

Find more 2SK36 price and stock on Findchips.com

2SK36 Datasheets (263)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK36	Unknown	FET Data Book	Scan	PDF
2SK360	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF
2SK360	Hitachi Semiconductor	Silicon N-Channel MOS FET	Original	PDF
2SK360	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF
2SK360	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF
2SK360	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
2SK360	Unknown	FET Data Book	Scan	PDF
2SK3600-01L	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3600-01S	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3600-01SJ	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3601-01	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3601-01	Fuji Electric	SMD, Power Amplifier, 100V 20A 50W, MOS-FET N-Channel enhanced	Original	PDF
2SK3602-01	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3603-01MR	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF

2SK3604-01L	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3604-01S	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3604-01SJ	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3605-01	Fuji Electric	SMD, Power Amplifier, 150V 16A 50W, MOS-FET N-Channel enhanced	Original	PDF
2SK3605-01	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3606-01	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF

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2SK36 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK36 Abstract: No abstract text available Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High \|Yfs\|: \|Yfs\| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)	Original	PDF	2SK369 2SK36
2SK3637 Abstract: No abstract text available Text: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3637 1 .2 7 -0+ 0.1.1 TO-263 Features Low on-resistance, low Qg Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1	Original	PDF	2SK3637 O-263 2SK3637
ciss Abstract: 2SK3635 Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3635 TO-252 Features High voltage: VDSS = 200 V Gate voltage rating: +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 30 V Low Ciss: Ciss = 390 pF TYP. Built-in gate protection diode	Original	PDF	2SK3635 O-252 ciss 2SK3635
2SK3636 Abstract: No abstract text available Text: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3636 TO-263 Avalanche energy capacity guaranteed: EAS 20 mJ +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 No secondary breakdown +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2	Original	PDF	2SK3636 O-263 2SK3636
930 18a diode smd Abstract: 930 18a 2SK3641 930 diode smd Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 15 A	Original	PDF	2SK3641 O-252 930 18a diode smd 930 18a 2SK3641 930 diode smd
2SK3658 Abstract: No abstract text available Text: 2SK3658 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3658 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	PDF	2SK3658 2SK3658
Untitled Abstract: No abstract text available Text: 2SK3633 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV 2SK3633 ○ スイッチングレギュレータDC−DC コンバータ ○ モータドライブ用単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。	Original	PDF	2SK3633
K3667 Abstract: toshiba k3667 2SK3667 transistor compatible k3667 Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	PDF	2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667
K3662 Abstract: 2SK3662 Text: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 55 S (typ.)	Original	PDF	2SK3662 K3662 2SK3662
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SK3643 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 2400pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 32 A	Original	PDF	2SK3643 O-252 2400pF
K3669 Abstract: 2SK3669 Text: 2SK3669 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSVII 2SK3669 ○ スイッチングレギュレータ用 ○ スイッチングアンプ用 ○ モータドライブ用順方向伝達アドミタンスが高い。 : \|Yfs\| = 6 S (標準)	Original	PDF	2SK3669 K3669 2SK3669
K3670 Abstract: TRANSISTOR K3670 2SK3670 Text: 2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: \|Yfs\| = 2.1 S (typ.)	Original	PDF	2SK3670 K3670 TRANSISTOR K3670 2SK3670
diode FR 105 Abstract: 2SK3613-01 Text: 2SK3613-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings Drawings mm (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof	Original	PDF	2SK3613-01 voltage50 diode FR 105 2SK3613-01
2SK3654 Abstract: 2SK365 Text: 2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	PDF	2SK365 2SK3654 2SK365

2sk3672 Abstract: 2SK3673 toshiba audio power amplifier 2SK367 Text: 2SK367 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications • Unit: mm High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)	Original	PDF	2SK367 2sk3672 2SK3673 toshiba audio power amplifier 2SK367
2SK364 Abstract: TOSHIBA 2SK364 2SJ104 Toshiba 2SJ Text: 2SK364 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	PDF	2SK364 2SJ104 SC-43 2SK364 TOSHIBA 2SK364 2SJ104 Toshiba 2SJ
125MH Abstract: No abstract text available Text: 2SK3685-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters	Original	PDF	2SK3685-01 125MH
Untitled Abstract: No abstract text available Text: 2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply	Original	PDF	2SK3676-01L
2SK3638 Abstract: 2SK3638-ZK Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE	Original	PDF	2SK3638 2SK3638 2SK3638-ZK O-252 O-252) 2SK3638-ZK
Untitled Abstract: No abstract text available Text: 2SK3651-01R [0311] FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-3PF High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	PDF	2SK3651-01R
2sk3699 Abstract: 2sk3699-01mr Text: 2SK3699-01MR FUJI POWER MOSFET 200305 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators	Original	PDF	2SK3699-01MR O-220F 2sk3699 2sk3699-01mr
2sk3679 Abstract: mosfet 2sk3679 2SK3679-01MR 2SK3679 equivalent MOSFET 2sk3679 Data sheet 2SK3679-01 2SK3679-01MR equivalent Text: 2SK3679-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators	Original	PDF	2SK3679-01MR O-220F mJ300 2sk3679 mosfet 2sk3679 2SK3679-01MR 2SK3679 equivalent MOSFET 2sk3679 Data sheet 2SK3679-01 2SK3679-01MR equivalent
Untitled Abstract: No abstract text available Text: 2SK3690-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters	Original	PDF	2SK3690-01 O-220AB
Sj 88 diode Abstract: 2SK3612 Diode SJ 14 Text: 2SK3612-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators	Original	PDF	2SK3612-01L O-220AB Sj 88 diode 2SK3612 Diode SJ 14

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2SK36 Search Results

2SK36 Result Highlights (5)

2SK36 Price and Stock

Rochester Electronics LLC 2SK3617-E

Rochester Electronics LLC 2SK3634-AZ

Toshiba America Electronic Components 2SK3662(F)

Rochester Electronics LLC 2SK3635-Z-AZ

Rochester Electronics LLC 2SK3615-TL-E

2SK36 Datasheets (263)

2SK36 Datasheets Context Search

2SK36

2SK3637

ciss

2SK3636

930 18a diode smd

2SK3658

Untitled

K3667

K3662

Untitled

K3669

K3670

diode FR 105

2SK3654

2sk3672

2SK364

125MH

Untitled

2SK3638

Untitled

2sk3699

2sk3679

Untitled

Sj 88 diode