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Rochester Electronics LLC 2SK1848-TB-E NCH 4V DRIVE SERIES
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DigiKey	2SK1848-TB-E	Bulk			1,665	1 - 10 - 100 - 1000 - 10000 $0.18	Buy Now
Rochester Electronics LLC 2SK1847-TB-E NCH 4V DRIVE SERIES
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DigiKey	2SK1847-TB-E	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.1	Buy Now
Aptina Imaging 2SK1848-TB-E Trans MOSFET N-CH Si 60V 0.4A 3-Pin CP
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Verical	2SK1848-TB-E		102,000		2,037	1 - 10 - 100 - 1000 - 10000 $0.1841	Buy Now
onsemi 2SK1848-TB-E
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Farnell	2SK1848-TB-E	Each			1,500	1 - 10 - 100 - 1000 - 10000 £0.153	Buy Now
Rochester Electronics	2SK1848-TB-E		102,000		1	1 $0.1733 10 $0.1733 100 $0.1629 1000 $0.1473 10000 $0.1473	Buy Now
onsemi 2SK1847-TB-E 2SK1847 - NCH 4V DRIVE SERIES '
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Rochester Electronics	2SK1847-TB-E		3,000		1	1 $0.0975 10 $0.0975 100 $0.0917 1000 $0.0829 10000 $0.0829	Buy Now

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2SK184 Datasheets (68)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK184	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK184	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK184	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK184	Unknown	FET Data Book	Scan	PDF
2SK184	Unknown		Scan	PDF
2SK184	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK184	Toshiba	FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE	Scan	PDF
2SK184	Toshiba	Silicon N channel field effect transistor for low noise audio amplifier applications	Scan	PDF
2SK184	Toshiba	TO-92 Mini Package Transistors / Junction FETs	Scan	PDF
2SK1840	Sanyo Semiconductor	MOSFET analog switching	Original	PDF
2SK1840	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1840	Sanyo Semiconductor	Ultra High Speed Switching MOSFETS	Scan	PDF
2SK1840	Sanyo Semiconductor	CP Type Transistors	Scan	PDF
2SK1840	Sanyo Semiconductor	Small Signal Junction FETS / MOSFETS	Scan	PDF

2SK1840	Sanyo Semiconductor	Transistors / Switching Transistors	Scan	PDF
2SK1841	Sanyo Semiconductor	N-Channel Enhancement Silicon MOSFET	Original	PDF
2SK1841	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1841	Sanyo Semiconductor	Ultra High Speed Switching MOSFETS	Scan	PDF
2SK1841	Sanyo Semiconductor	Small Signal Junction FETS / MOSFETS	Scan	PDF
2SK1841	Sanyo Semiconductor	Transistors / Switching Transistors	Scan	PDF

2SK184 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK1846 Abstract: No abstract text available Text: Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 20mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.4±0.3 8.5±0.2 6.0±0.5 ● Contactless relay	Original	PDF	2SK1846 2SK1846
Untitled Abstract: No abstract text available Text: 2SK1846 Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed : EAS > 20mJ ● V GSS=±30V guaranteed secondary breakdown ■ Features ● Solenoid ● Motor 1.5max. 10.5min. ● Non-contact	Original	PDF	2SK1846 Gate80
Untitled Abstract: No abstract text available Text: 2SK1847 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V) I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC)	Original	PDF	2SK1847
PL3015 Abstract: No abstract text available Text: Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 20mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.4±0.3 8.5±0.2 10.0±0.3 ■ Applications	Original	PDF	2SK1846 PL3015
mosfet 4501 Abstract: EN4501 2SK1849 marking MJ Text: Ordering number:EN4501 N-Channel Silicon MOSFET 2SK1849 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK1849] 0.16 0.95 0.95 2 1.9 2.9	Original	PDF	EN4501 2SK1849 2SK1849] mosfet 4501 EN4501 2SK1849 marking MJ
EN4635 Abstract: 2SK1840 Text: Ordering number:EN4635 N-Channel Enhancement Silicon MOSFET 2SK1840 Analog Switch Applications Features Package Dimensions • Largeyfs. · Enhancement type. · Low ON resistance. unit:mm 2024B 0.4 3 0.5 [2SK1840] 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate	Original	PDF	EN4635 2SK1840 2024B 2SK1840] EN4635 2SK1840
EN4636 Abstract: 2SK1841 Text: Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features Package Dimensions • Largeyfs. · Enhancement type. · Low ON resistance. unit:mm 2040A [2SK1841] 2.2 3.0 4.0 15.0 0.6	Original	PDF	EN4636 2SK1841 2SK1841] EN4636 2SK1841
2sk184 Abstract: 2SK1843 FIELD EFFECT TRANSISTOR Text: 2SK184 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 Low Noise Audio Amplifier Applications Unit: mm • High \|Yfs\|: \|Yfs\| = 15 mS typ. (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)	Original	PDF	2SK184 2sk184 2SK1843 FIELD EFFECT TRANSISTOR
2SK1842 Abstract: No abstract text available Text: Silicon Junction FETs Small Signal 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low gate to source leakage current, IGSS	Original	PDF	2SK1842 2SK1842
2SK1848 Abstract: marking LJ Text: Ordering number:EN4500 N-Channel Silicon MOSFET 2SK1848 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK1848] 0.16 0.95 0.95 2 1.9 2.9	Original	PDF	EN4500 2SK1848 2SK1848] 2SK1848 marking LJ
Untitled Abstract: No abstract text available Text: 2SK1842 Silicon Junction FETs Small Signal 2SK1842 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency For infrared sensor +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 2 Rating VGDO – 40 Gate-Source voltage	Original	PDF	2SK1842
2SK1841 Abstract: ITR02023 ITR02024 ITR02025 ITR02026 ITR02027 ITR02028 ITR02029 ITR02030 C2016 Text: 注文コード No. N 4 6 3 6 2SK1841 No. N4636 72199 2SK1841 特長 N チャネルエンハンスメント MOS 形シリコン電界効果トランジスタ超高速スイッチ , アナログスイッチ用・⏐yfs⏐ が大きい。・エンハンスメントタイプである。	Original	PDF	2SK1841 N4636 ITR02028 ITR02027 ITR02029 ITR02030 ITR02031 2SK1841 ITR02023 ITR02024 ITR02025 ITR02026 ITR02027 ITR02028 ITR02029 ITR02030 C2016
2sk184 Abstract: "Field Effect Transistor" Text: 2SK184 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 Low Noise Audio Amplifier Applications Unit: mm • High \|Yfs\|: \|Yfs\| = 15 mS typ. (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)	Original	PDF	2SK184 2sk184 "Field Effect Transistor"
latest Infrared-Sensor Abstract: 2SK1842 Text: Silicon Junction FETs Small Signal 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low gate to source leakage current, IGSS	Original	PDF	2SK1842 latest Infrared-Sensor 2SK1842

MARKING MJ Abstract: 2SK1849 mosfet 4501 EN4501 Text: Ordering number:EN4501 N-Channel Silicon MOSFET 2SK1849 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK1849] 0.16 0.95 0.95 2 1.9 2.9	Original	PDF	EN4501 2SK1849 2SK1849] MARKING MJ 2SK1849 mosfet 4501 EN4501
S3V40 Abstract: 2SK1840 ITR02014 C2016 ITR02015 ITR02016 ITR02017 ITR02018 ITR02019 ITR02021 Text: 注文コード No. N 4 6 3 5 2SK1840 No. N4635 81099 2SK1840 特長 N チャネルエンハンスメント MOS 形シリコン電界効果トランジスタアナログスイッチ用・yfs が大きい。・エンハンスメントタイプである。	Original	PDF	2SK1840 N4635 ITR02019 ITR02016 ITR02020 ITR02021 ITR02022 S3V40 2SK1840 ITR02014 C2016 ITR02015 ITR02016 ITR02017 ITR02018 ITR02019 ITR02021
2SK1848 Abstract: No abstract text available Text: O rdering num ber: E N 4 50 0 _ 2SK1848 N-Channel MOS Silicon FET No.4500 Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage	OCR Scan	PDF	EN4500 2SK1848 10/iS,
2SK1840 Abstract: No abstract text available Text: Ordering number: E N 4635 No.4635 I 2SK1840 N-Channel Enhancement MOS Silicon FET Analog Switch Applications Features • Large I Vfs I . • Enhancement type. • Low ON resistance. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage V dss Gate-to-Source Voltage	OCR Scan	PDF	EN4635 2SK1840 10a/A 2SK1840
2sk184 Abstract: No abstract text available Text: TO S H IBA 2SK184 TO S H IB A FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 84 Unit in mm LO W NOISE A U D IO AMPLIFIER APPLICATIONS 4.2MAX. • • • High \|Yfs\| : \|Yfc\| = 15mS Typ. (VDS = 10V, VGS = 0) High Breakdown Voltage : VGDg= —50V	OCR Scan	PDF	2SK184 55MAX. 120Hz 2sk184
2sk184 Abstract: M5030 Text: TOSHIBA 2SK184 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 84 Unit in mm LO W NOISE A U D IO AMPLIFIER APPLICATIONS 4.2MAX. High \|Yfc\| : \|Yfc\| = 15mS Typ. (VDS = 10V, VGS = 0) High Breakdown Voltage : VGDg= —50V Low Noise : NF = 1.0dB (Typ.)	OCR Scan	PDF	2SK184 --50V --30V) 55MAX. 2sk184 M5030
K184 Abstract: 2SK184 Text: 2SK184 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR 2 S K SILICON N CHANNEL JUNCTION TYPE 18 4 Unit in mm LOW NOISE AUDIO AM PLIFIER APPLICATIONS 4.2MAX. • High \|Yfs\| : \|Yfs\| = 15mS Typ. (VDS = 10V, VGS = 0) • High Breakdown Voltage : V q /d § = —50V •	OCR Scan	PDF	2SK184 --50V 55MAX. --30V) 120Hz K184 2SK184
2SK1885 Abstract: 2SK2437 2SK2438 Text: 0 ID Series Lineup VDSS = 30V, N-channel Absolute maximum ratings atT a= 25°C Typelto. Package Voss V 2SK1847 (V) CP 2SK1467 2SK1724 VGSS ±15 •o (A) m 0.5 0.25* 2.0 1.0 PCP 2SK2437 i2 0 2SK1468 P d* VGS(off) min to max (V) 1.0 to 2.0 3.5 2.0 4.0 Electrical characteristics atTa = 25°C	OCR Scan	PDF	2SK1847 2SK1467 2SK1724 2SK2437 2SK1468 2SK1469 2SK2046 2SK2438 2SK2439 2SK2555 2SK1885
2SK184 Abstract: GS SH 2 12 D Text: 2SK184 TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 84 LOW NOISE AUDIO AMPLIFIER APPLICATIONS U nit in mm \| • High \|Yfc\| • High Breakdown Voltage : V qj S = —50Y • Low Noise : NF = l.OdB Typ.) <VDS = 1°V, Id = 0.5mA, f= lk H z , RG = l k f l )	OCR Scan	PDF	2SK184 --50Y --30V) 2SK184 GS SH 2 12 D
2sk184 Abstract: No abstract text available Text: TO SH IBA 2SK184 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 84 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS 4.2MAX. • • • High \|Yfc\| : \|Yfc\| = 15mS Typ. (VDS = 10V, VGS = 0) High Breakdown Voltage : V Q D g=—50V	OCR Scan	PDF	2SK184 55MAX. --50V 2sk184

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Rochester Electronics LLC 2SK1848-TB-E

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2SK184 Datasheets (68)

2SK184 Datasheets Context Search

2SK1846

Untitled

Untitled

PL3015

mosfet 4501

EN4635

EN4636

2sk184

2SK1842

2SK1848

Untitled

2SK1841

2sk184

latest Infrared-Sensor

MARKING MJ

S3V40

2SK1848

2SK1840

2sk184

2sk184

K184

2SK1885

2SK184

2sk184