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    2SK131 Search Results

    2SK131 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1316STR-E Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1314STR-E Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1313L-E Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1315L-E Renesas Electronics Corporation Silicon N Channel MOSFET, LDPAK(L), /Tube Visit Renesas Electronics Corporation
    2SK1317-E Renesas Electronics Corporation Nch Single Power Mosfet 1500V 2.5A 12000Mohm To-3P Visit Renesas Electronics Corporation
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    2SK131 Price and Stock

    Renesas Electronics Corporation 2SK1317-E

    MOSFET N-CH 1500V 2.5A TO3P
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    DigiKey 2SK1317-E Tube 4,636 1
    • 1 $6.13
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    • 100 $3.944
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    Avnet Americas 2SK1317-E Tube 18 Weeks 330
    • 1 $4.206
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    Mouser Electronics 2SK1317-E 88,046
    • 1 $6.59
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    • 100 $3.79
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    Newark 2SK1317-E Bulk 5 1
    • 1 $6.85
    • 10 $5.88
    • 100 $3.89
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    TME 2SK1317-E 1
    • 1 $6.18
    • 10 $5.42
    • 100 $4.31
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    ComSIT USA 2SK1317-E 359
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    Avnet Asia 2SK1317-E 18 Weeks 390
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    Avnet Silica 2SK1317-E 20 Weeks 30
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    New Advantage Corporation 2SK1317-E 31,140 1
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    Renesas Electronics America 2SK1317-E Tube 4,546 1
    • 1 $6.13
    • 10 $6.13
    • 100 $3.944
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    Win Source Electronics 2SK1317-E 39,200
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    Rochester Electronics LLC 2SK1315L-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1315L-E Bulk 115
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    Rochester Electronics LLC 2SK1313S-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1313S-E Bulk 144
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    Rochester Electronics LLC 2SK1318-90-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1318-90-E Bulk 102
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    Rochester Electronics LLC 2SK1313STR-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1313STR-E Bulk 144
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    Find more 2SK131 price and stock on Findchips.com

    2SK131 Datasheets (122)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK131 Unknown FET Data Book Scan PDF
    2SK1310 Toshiba RF Power MOS FET for VHF TV Broadcast Transmitter Scan PDF
    2SK1310 Toshiba N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER) Scan PDF
    2SK1310A Toshiba TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Original PDF
    2SK1310A Unknown Scan PDF
    2SK1311 Unknown FET Data Book Scan PDF
    2SK1311 Unknown N-Channel Power MOSFET Scan PDF
    2SK1313 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1313 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1313 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1313 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1313 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1313(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK1313L Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1313L Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1313(L) Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1313L Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1313L Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1313L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1313(L)-(S) Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    ...

    2SK131 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1317

    Abstract: DSA003638
    Text: 2SK1317 Silicon N-Channel MOS FET ADE-208-1268 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original     		PDF 2SK1317 ADE-208-1268 2SK1317 DSA003638

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK1315 L (S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original     		PDF 2SK1315 2SK1316 Hitachi DSA00279

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK1315 L (S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original     		PDF 2SK1315 2SK1316 D-85622 Hitachi DSA002779

    VHF TV BROADCAST TRANSMITTER

    Abstract: 2SK1310 2SK1310A 2SK131 2-22C2A
    Text: 2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm l Output Power : Po ≥ 190 W Min. l Drain Efficiency : ηD = 65% (Typ.) l Frequency : f = 230 MHz l Push−Pull Structure Package


    Original     		PDF 2SK1310A 2-22C2A 000707EAA1 VHF TV BROADCAST TRANSMITTER 2SK1310 2SK1310A 2SK131 2-22C2A

    2SK1316

    Abstract: 2SK1316L-E PRSS0004AE-A REJ03G0928-0200
    Text: 2SK1316 L , 2SK1316(S) Silicon N Channel MOS FET REJ03G0928-0200 (Previous: ADE-208-1267) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown


    Original     		PDF 2SK1316 REJ03G0928-0200 ADE-208-1267) PRSS0004AE-A PRSS0004AE-B 2SK1316L-E PRSS0004AE-A REJ03G0928-0200

    2SK1313

    Abstract: 2SK1314 PRSS0004AE-A
    Text: 2SK1313 L , 2SK1313(S) 2SK1314(L), 2SK1314(S) Silicon N Channel MOS FET REJ03G0927-0200 (Previous: ADE-208-1266) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current


    Original     		PDF 2SK1313 2SK1314 REJ03G0927-0200 ADE-208-1266) PRSS0004AE-A PRSS0004AE-B PRSS0004AE-A

    2sk1317

    Abstract: Hitachi DSA002779
    Text: 2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original     		PDF 2SK1317 D-85622 2sk1317 Hitachi DSA002779

    2SK1159

    Abstract: 2SK1160 2SK1315 2SK1316 Hitachi DSA00347
    Text: 2SK1315 L (S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original     		PDF 2SK1315 2SK1316 2SK1315 2SK1316 2SK1159 2SK1160 Hitachi DSA00347

    2SK1317

    Abstract: DSA0037652 Hitachi DSA003765
    Text: 2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original     		PDF 2SK1317 2SK1317 DSA0037652 Hitachi DSA003765

    2SK1315

    Abstract: Hitachi DSA001651
    Text: 2SK1315 L (S), 2SK1316(L)(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features N N N N N Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original     		PDF 2SK1315 2SK1316 2SK1315 2SK1316 Hitachi DSA001651

    2SK1155

    Abstract: 2SK1156 2SK1313 2SK1314 Hitachi DSA0072
    Text: 2SK1313 L (S), 2SK1314(L)(S) Silicon N-Channel MOS FET ADE-208-1266 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK1313 2SK1314 ADE-208-1266 2SK1313 2SK1314 2SK1155 2SK1156 Hitachi DSA0072

    2sk1310

    Abstract: No abstract text available
    Text: 2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po ≥ 190 W Min. Drain Efficiency : ηD = 65% (Typ.) Frequency : f = 230 MHz Push−Pull Structure Package


    Original     		PDF 2SK1310A 2-22C2A 2sk1310

    2SK1318

    Abstract: 40-8Vdd DSA003638
    Text: 2SK1318 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1269 Z 1st. Edition Jan. 2001 Features • • • • • Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK1318 ADE-208-1269 O-220FM 2SK1318 40-8Vdd DSA003638

    2SK1318

    Abstract: 2SK1318-E PRSS0003AD-A
    Text: 2SK1318 Silicon N Channel MOS FET High Speed Power Switching REJ03G0930-0200 Previous: ADE-208-1269 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK1318 REJ03G0930-0200 ADE-208-1269) PRSS0003AD-A O-220FM) 2SK1318 2SK1318-E PRSS0003AD-A

    2SK1317

    Abstract: No abstract text available
    Text: 2SK1317 Silicon N Channel MOS FET REJ03G0929-0200 Previous: ADE-208-1268 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown


    Original     		PDF 2SK1317 REJ03G0929-0200 ADE-208-1268) PRSS0004ZE-A 2SK1317

    Hitachi DSA001651

    Abstract: No abstract text available
    Text: 2SK1313 L (S), 2SK1314(L)(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features N N N N N Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK1313 2SK1314 2SK1313 2SK1314 Hitachi DSA001651

    Untitled

    Abstract: No abstract text available
    Text: 2SK1315 L (S), 2SK1316(L)(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver


    OCR Scan     		PDF 2SK1315 2SK1316 2SK1315 2SK1316 2SK1159, 2SK1160.

    HA 1314

    Abstract: k 1314
    Text: 2SK1313 L (S), 2SK1314(L)(S) Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • L ow on-resistance High speed switching Low drive current N o secondary breakdown Suitable for switching regulator and DC-DC converter


    OCR Scan     		PDF 2SK1313 2SK1314 HA 1314 k 1314

    Untitled

    Abstract: No abstract text available
    Text: 2SK1315 L (S), 2SK1316(L)(S) Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current N o secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    OCR Scan     		PDF 2SK1315 2SK1316

    2SK1311

    Abstract: No abstract text available
    Text: 2SK1311 2062 LD L o w D rive S eries V d ss = 6 0 V N Channel Power M OSFET F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage Vdss G ate to Source Voltage


    OCR Scan     		PDF 2SK1311 250mm2X X-6380 2SK1311

    2sk1317

    Abstract: 2SK131
    Text: 2SK1317 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itch in g Features • H igh breakdow n voltage V DSS = 1500 V • H igh speed sw itch in g • L ow drive current • N o secondary breakdow n • Suitable for sw itch in g regulator, D C -D C converter and m otor driver


    OCR Scan     		PDF 2SK1317 2sk1317 2SK131

    2sk1310

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1310 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 3 <; k n m RF PO W ER MOS FET for VHF TV BROADCAST TRANSMITTER O utput Power Po = 190W Min. Drain Efficiency 71D = 65% (Typ.) Frequency f = 23öMHz Push - Pull Structure Package M A XIM U M RATINGS (Tc = 25°C)


    OCR Scan     		PDF 2SK1310 961001EAA2' 2sk1310

    2SK1310

    Abstract: VHF TV BROADCAST TRANSMITTER 2-30-MHz 230MHZ VHF BROADCAST 14pf variable capacitor Silver mica capacitor
    Text: TOSHIBA 2SK1310 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 310 RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power Po^l90W M in. Drain Efficiency 7D = 65%(Typ.) Frequency f = 230MHz Push-P ull Structure Package MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan     		PDF 2SK1310 230MHz 4700pF 2SK1310 VHF TV BROADCAST TRANSMITTER 2-30-MHz 230MHZ VHF BROADCAST 14pf variable capacitor Silver mica capacitor

    VHF TV BROADCAST TRANSMITTER

    Abstract: 200 pF air variable capacitor variable capacitor trimmer Q TRIMMER capacitor 2SK131 2SK1310A L4 toshiba mica trimmer capacitor
    Text: TOSHIBA 2SK1310A 2 S K 1 3 1 OA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power Po ^ 190 W Min. Drain Efficiency 7D = 65% (Typ.) f = 230 MHz Frequency Push - Pull Structure Package


    OCR Scan     		PDF 2SK1310A VHF TV BROADCAST TRANSMITTER 200 pF air variable capacitor variable capacitor trimmer Q TRIMMER capacitor 2SK131 2SK1310A L4 toshiba mica trimmer capacitor