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    2SB133 Search Results

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    2SB133 Price and Stock

    ROHM Semiconductor 2SB1333

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    Bristol Electronics 2SB1333 1,700
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    ComSIT USA 2SB1333 6,000
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    ROHM Semiconductor 2SB1330

    TRANSISTOR,BJT,PNP,80V V(BR)CEO,700MA I(C),TO-92
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    Quest Components 2SB1330 400
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    2SB133 Datasheets (67)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1330 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1330 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1330 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1330 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1330 ROHM Scan PDF
    2SB1330 ROHM TO-92L, TO-92LS, MRT Transistors Scan PDF
    2SB1331 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1331 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1331 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1331 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1331 ROHM Scan PDF
    2SB1331 ROHM TO-92L, TO-92LS, MRT Transistors Scan PDF
    2SB1332 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1332 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1332 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1332 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1332 ROHM Scan PDF
    2SB1332 ROHM TO-92L, TO-92LS, MRT Transistors Scan PDF
    2SB1333 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1333 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    2SB133 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1335

    Abstract: 2sd1855
    Text: Inchange Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1855 ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier applications PINNING


    Original
    PDF 2SB1335 O-220Fa 2SD1855 2SB1335 2sd1855

    2SD1888

    Abstract: 2SB1339
    Text: SavantIC Semiconductor Product Specification 2SD1888 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·Complement to type 2SB1339 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION


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    PDF 2SD1888 O-220C 2SB1339 10MHz 2SD1888 2SB1339

    2SB1334

    Abstract: 2SD1778
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1334 DESCRIPTION •High Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1778


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    PDF 2SB1334 2SD1778 2SB1334 2SD1778

    2SB1335

    Abstract: 2SD1855
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1335 DESCRIPTION •High Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1855


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    PDF 2SB1335 2SD1855 2SB1335 2SD1855

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1335 2SD1855 94L-356-B14 (94L-878-D14) 279


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    PDF 2SB1335 2SD1855 94L-356-B14) 94L-878-D14)

    2sd1888

    Abstract: 2SB1339 2sb133
    Text: Inchange Semiconductor Product Specification 2SD1888 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・Complement to type 2SB1339 ・High DC current gain APPLICATIONS ・Low frequency power amplification PINNING PIN DESCRIPTION


    Original
    PDF 2SD1888 O-220C 2SB1339 10MHz 2sd1888 2SB1339 2sb133

    2SB1334A

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB1334A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications


    Original
    PDF 2SB1334A O-220 O-220) 2SB1334A

    2SD1855

    Abstract: 2SB1335
    Text: SavantIC Semiconductor Product Specification 2SD1855 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB1335 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN


    Original
    PDF 2SD1855 O-220Fa 2SB1335 O-220Fa) 2SD1855 2SB1335

    Untitled

    Abstract: No abstract text available
    Text: 2SB1331R Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original
    PDF 2SB1331R Freq100M

    2SB1335

    Abstract: 2sd1855
    Text: SavantIC Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1855 ·Low collector saturation voltage · APPLICATIONS ·For low frequency power amplifier applications PINNING


    Original
    PDF 2SB1335 O-220Fa 2SD1855 2SB1335 2sd1855

    2SB1339

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB1339 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications


    Original
    PDF 2SB1339 O-220C -120V; 2SB1339

    2SB1334

    Abstract: 2SD1778 3CU500 1e0a
    Text: h 7 'y sy /T ra n s is to rs 2SB1334 - 7 = 3 3 - / 9 fl ^ a j f c ^ ^ i a t S ^ / L o w F re q . P o w e r A m p . Epitaxial Planar P N P Silicon Transistor


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    PDF 2SB1334 2SD1778 O-220 To-25 Tc-23-C) IcAti--1A/-03A 2SB1334 T-33-19 3CU500 1e0a

    Untitled

    Abstract: No abstract text available
    Text: 2SB1335 2SD1855 Transistors I Power Transistor 60V, —4A 2SB1335 •F e a tu re s •A b s o lu te maximum ratings (Ta—2S'C) 1) L o w VcE(sat). (T y p .— 0 .5 V a t Ic/I b = — 3 / - 0 . 3 A ) Parameter Collector-base voltage C ollector-em itter voltage


    OCR Scan
    PDF 2SB1335 2SD1855 2SD1855. O-220FP 0Dlb713 O-220FN O-220FN O220FP

    2SB1333

    Abstract: B1333 2SD2011
    Text: h 7 > y ^ £ /Transistors 2 S B 1 333 2SB1333 #-u> h >mm Epitaxial Planar PNP Silicon Transistor (Darlington l& jp lM lli^ J iS 'tiffl/L o w Freq. Power Am p. V > h > f£ tx7 1) 2) hpE K r tj« 0 3) 'x — X • 1 5 •> 4) 2SD2011 t = l > 7 U 7 < f c £ o


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    PDF 2SB1333 2SD2011 2SD2011. C/51V3 2SB1333 B1333

    2SB596

    Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
    Text: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T


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    PDF 2SB824 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB942A 2SB686 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a

    2SB1331

    Abstract: 2SD2007
    Text: h 7 > y 7,2 /Transistors 2SB1331 2SB1331 X t i 2 * y t JU7 ° \ s - j - f ó PNP V V = i> h 7 > y 7 2 Epitaxial Planar PNP Silicon Transistor Cf3t i : f r * i lflïffl/M e d iu m Power Amp. íl-Jfí'+íiH /D im ensions Unit : mm 1) lc p = —3A, P c = 1 .2 W (D *h H * o


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    PDF 2SB1331 2SB1331 2SD2007 2SD2007. 2SD2007

    2SB1339

    Abstract: No abstract text available
    Text: h "7 > y 7k$ / T 2SB1339 ransistors 2SB1339 & - 'j> h> w m Epitaxial Planar PNP Silicon Transistor Darlington 1£JH )& £2ji84iffl/L o w Freq. Power Amp. 1ÿ t-ïïi'+ ü /Dim ensions (Unit : mm) 1) ? - • ; > h > * £ < * ? hFE t f ’S L 'o 2) K r tjffio


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    PDF 2SB1339 2ji84iffl/L 2SD1888 2SD1888. O-220 SC-46 2SB1339

    2SB1335A

    Abstract: No abstract text available
    Text: h "7 O 2SB1335A /Transistors C R 4 3 3 5 A W w w # ^ * £ * * ' > 7 ^ : / V - : ^ P N P y ÿ i i > h 7 > y 2 * Epitaxial Planar PNP Silicon Transistor Fraq. Power Amp. > i /Dim ensions Unit : mm • ttft 1 ) VcE (sat) A'*j6 l ' 0 _ io .n l“ ; VcE (s a t)= —0.5V (Typ.)


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    PDF 2SB1335A O-220FP SC-67 2SB1335A

    2SD2005

    Abstract: 2SD2004 2SB1482 2SB1328 2SD2010
    Text: Bipolar transistors-2SA series MRT summary Table 6 MRT general use transistors *c V (A) (A) Pc (W) (T. = 2 5 X ) 2SB1329 -3 2 -1 -2 1.2 2SB1330 -8 0 -0 .7 2SB1328 -1 6 0 -1 .5 2SB1517 -5 0 2SD2005 V CEO Application Part no. (max) * V CES h FE h FE ranking


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    PDF 2SB1329 2SB1330 2SB1328 2SB1517 2SD2005 2SD2006 2SD2004 2SD2146 2SB1482 2SB1333 2SD2010

    2SD1929

    Abstract: 2SD2172 2sd1930 2SB1425 2SA1780 2SB1041 2SD2159 2SA1482 2SB1256 2SD2007
    Text: ¡TÏÏTÏÏÏ1 T r an s i s t o r s • TO-92L, MRT Types Type Function It: u 1. A -32 1 -2 0.75 1.2 82 - 390 Ver ( V ) -3 -80 0.7 . 0.75 1.2 82 - 390 -3 -100 -32 2 -3 -80 -1 2SB1329 2SA935 2SB1330 2SB1010 2SB1331 2SB1041 2SB1332 -50 -1 -1 5 2SB1043 2SB1212


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    PDF O-92L, O-92L 2SA934 2SA935 2SB1010 2SB1041 2SB1043 2SB1212 2SB1425 2SC2060 2SD1929 2SD2172 2sd1930 2SA1780 2SD2159 2SA1482 2SB1256 2SD2007

    2SB1333

    Abstract: No abstract text available
    Text: 2SB1333 Transistor, PNP Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • • damper diode is incorporated built in resistors between base and emitter complementary pair with 2SD2011


    OCR Scan
    PDF 2SB1333 2SD2011 2SB1333 2SB1333,

    2sd2011

    Abstract: 2SB1333 transistor 2SD 2sd darlington
    Text: 2SD2011 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • damper diode incorporated • built-in resistors between base and emitter • complementary pair with 2SB1333


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    PDF 2SD2011 2SB1333 2SD2011, 2sd2011 transistor 2SD 2sd darlington

    Untitled

    Abstract: No abstract text available
    Text: I ' 7 > y 7 $ /Transistors 2SB1334 2SB1334 X f c T * * V T \sZf\s—rf& PNP v v =3 > h 7 > y X $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • ft* 1 1) VcE sat) /Dim ensions (Unit: mm) 'o V cE(sat)= -0.3 V (Typ.) ¿ 3 . 6 + 0.2 10.0 ±0.3 h


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    PDF 2SB1334 2SB1334 2SD1778

    Nec K 872

    Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
    Text: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634


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    PDF 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB920 2SB595 2SB703A 2SB942A 2SA1634 Nec K 872 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601