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    2SB1182 Search Results

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    2SB1182 Price and Stock

    ROHM Semiconductor 2SB1182TLQ

    TRANS PNP 32V 2A CPT3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1182TLQ Digi-Reel 6,210 1
    • 1 $1.61
    • 10 $1.019
    • 100 $1.61
    • 1000 $0.48837
    • 10000 $0.48837
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    2SB1182TLQ Cut Tape 6,210 1
    • 1 $1.61
    • 10 $1.019
    • 100 $1.61
    • 1000 $0.48837
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    2SB1182TLQ Reel 2,500 2,500
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    • 10000 $0.43779
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    Verical 2SB1182TLQ 2,500 187
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    • 1000 $0.3917
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    2SB1182TLQ 457 187
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    Farnell 2SB1182TLQ Each 6 Weeks, 1 Days 1
    • 1 £0.25
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    • 100 £0.22
    • 1000 £0.196
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    Quest Components 2SB1182TLQ 7,916
    • 1 $1.55
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    • 100 $1.55
    • 1000 $1.55
    • 10000 $0.465
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    2SB1182TLQ 1,746
    • 1 $0.8745
    • 10 $0.8745
    • 100 $0.4081
    • 1000 $0.3644
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    2SB1182TLQ 400
    • 1 $1.12
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    • 100 $0.56
    • 1000 $0.448
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    Bristol Electronics 2SB1182TLQ 1,630
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    CoreStaff Co Ltd 2SB1182TLQ 2,500
    • 1 $0.612
    • 10 $0.502
    • 100 $0.268
    • 1000 $0.241
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    2SB1182TLQ 457
    • 1 $0.612
    • 10 $0.502
    • 100 $0.268
    • 1000 $0.241
    • 10000 $0.241
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    ROHM Semiconductor 2SB1182TLR

    TRANS PNP 32V 2A CPT3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1182TLR Digi-Reel 2,081 1
    • 1 $1.47
    • 10 $0.927
    • 100 $1.47
    • 1000 $0.43975
    • 10000 $0.43975
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    2SB1182TLR Cut Tape 2,081 1
    • 1 $1.47
    • 10 $0.927
    • 100 $1.47
    • 1000 $0.43975
    • 10000 $0.43975
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    2SB1182TLR Reel 2,500
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    • 10000 $0.39324
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    Mouser Electronics 2SB1182TLR 1,621
    • 1 $1.2
    • 10 $0.874
    • 100 $0.607
    • 1000 $0.429
    • 10000 $0.342
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    Quest Components 2SB1182TLR 560
    • 1 $1
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    • 100 $1
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    Bristol Electronics 2SB1182TLR 700
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    Micro Commercial Components 2SB1182-R-TP

    TRANS PNP 32V 2A DPAK
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    Micro Commercial Components 2SB1182-Q-TP

    TRANS PNP 32V 2A DPAK
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    DigiKey 2SB1182-Q-TP Reel
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    ROHM Semiconductor 2SB1182TLQ/R

    Transistor, PNP, Driver, -32V, -2A, CPT, PK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 2SB1182TLQ/R Package 10
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    • 10 £0.449
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    2SB1182 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1182 Kexin Medium Power Transistor Original PDF
    2SB1182 ROHM Medium power Transistor(- 32V, -2A) Original PDF
    2SB1182 ROHM Medium power transistor (-32V, -2A) Original PDF
    2SB1182 TY Semiconductor Medium Power Transistor - TO-252 Original PDF
    2SB1182 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1182 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1182 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1182 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1182 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1182 ROHM MEDIUM POWER TRANSISTOR(-32V, -2A) Scan PDF
    2SB1182 ROHM CPT, TO-126, TO-126FP Transistors Scan PDF
    2SB1182 ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SB1182 ROHM Transistor Selection Guide Scan PDF
    2SB1182 ROHM CPT / TO-126 / TO-126FP Transistors Scan PDF
    2SB1182F5 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1182F5 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1182F5 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1182P ROHM MEDIUM POWER TRANSISTOR(-32V, -2A) Scan PDF
    2SB1182-P-TP Micro Commercial Components TRANS PNP 32V 2A DPAK Original PDF
    2SB1182Q ROHM Medium Power Transistor (-32V -2A) Scan PDF

    2SB1182 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4337

    Abstract: 161e 2SB1182
    Text: SPICE PARAMETER 2SB1182 by ROHM TR Div. * 2SB1182 PNP BJT model * Date: 2006/11/24 .MODEL 2SB1182 PNP + IS=600.00E-15 + BF=207.37 + VAF=16.367 + IKF=5.4337 + ISE=600.00E-15 + NE=1.3729 + BR=102.31 + VAR=100 + IKR=92.045E-3 + ISC=97.084E-12 + NC=1.4840 + NK=.7623


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    PDF 2SB1182 Q2SB1182 00E-15 045E-3 084E-12 000E-3 161E-3 26E-12 4337 161e 2SB1182

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 „ TO-252 DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „


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    PDF 2SB1182 O-252 2SB1182 2SB1182L-x-TN3-R 2SB1182G-x-TN3-R 2SB1182L-x-TN3-T 2SB1182G-x-TN3-T QW-R209-027

    2SB1182

    Abstract: No abstract text available
    Text: Transistors SMD Type Medium Power Transistor 2SB1182 TO-252 Features 6.50 +0.2 5.30-0.2 Low VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


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    PDF 2SB1182 O-252 100MHz 2SB1182

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1182 TO-252 Features 6.50 +0.2 5.30-0.2 Low VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2


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    PDF 2SB1182 O-252 100MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SB1182-P MCC TM Micro Commercial Components 2SB1182-Q   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1182-R Features x x • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage


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    PDF 2SB1182-P 2SB1182-Q 2SB1182-R

    2SB1182

    Abstract: No abstract text available
    Text: 2SB1182 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage


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    PDF 2SB1182 O-251/TO-252-2L O-251 O-252-2L -500mA -200mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1


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    PDF 2SB1182 2SB1240 2SD1758 2SD1862. 2SB1182 65Max. SC-63 R1010A

    2SB1240

    Abstract: transistor 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 zExternal dimensions (Unit : mm) 2SB1182 (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 2.3+0.2 −0.1 C0.5 0.65±0.1 0.75 9.5±0.5


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    PDF 2SB1188 2SB1182 2SB1240 2SB1182 2SB1188 2SD1766 2SD1758 2SB1240 transistor 2SB1240 2SD1862 T100

    2SB1182R

    Abstract: 2SB1182Q 2SB1182-Q
    Text: 2SB1182-P MCC TM Micro Commercial Components Features x x • • 2SB1182-Q   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1182-R PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage


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    PDF 2SB1182-P 2SB1182-Q 2SB1182-R 2SB1182R 2SB1182Q

    2SB1182

    Abstract: 2SB1240 2SD1758 2SD1862
    Text: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1


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    PDF 2SB1182 2SB1240 2SD1758 2SD1862. 2SB1182 65Max. SC-63 R1010A 2SB1240 2SD1862

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 2SB1182 Plastic-Encapsulate Transistors TRANSISTOR PNP TO-252 FEATURES Power Dissipation 1.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit VCBO Collector- Base Voltage


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    PDF O-252 2SB1182 -500mA -200mA 30MHz

    2sb1240

    Abstract: 2sb118 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 2.3 +0.2 −0.1 9.5±0.5 1.5 0.5±0.1 0.65±0.1 0.75 0.1 0.4 + −0.05


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    PDF 2SB1188 2SB1182 2SB1240 2SB1182 SC-62 SC-63 2sb1240 2sb118 2SD1758 2SD1766 2SD1862 T100

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.  FEATURES


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    PDF 2SB1182 2SB1182 2SB1182G-x-AB3-R OT-89 2SB1182L-x-TN3-R 2SB1182G-x-TN3-R O-252 2SB1182G

    2SB1182

    Abstract: No abstract text available
    Text: 2SB1182 PNP PLASTIC ENCAPSULATE TRA NSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER 1 3 2 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage


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    PDF 2SB1182 O-252) 30-Nov-07 O-252 O-252 2SB1182

    2SB1188

    Abstract: No abstract text available
    Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 2.3 +0.2 −0.1 9.5±0.5 1.5 0.5±0.1 0.65±0.1 0.75 0.1 0.4 + −0.05


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    PDF 2SB1188 2SB1182 2SB1240 2SD1766 2SD1758 2SD1862 2SB1188

    2SB1240

    Abstract: 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Text: Medium power transistor 32V, 2A 2SB1188 / 2SB1182 / 2SB1240 Dimensions (Unit : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 +0.1 0.4−0.05 0.4±0.1 1.5±0.1 1.5 0.65±0.1 0.75 2.3+0.2 −0.1 0.5±0.1 2.5 (2) C0.5 9.5±0.5 6.5±0.2 5.1+0.2


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    PDF 2SB1188 2SB1182 2SB1240 2SB1182 2SB1188 2SD1766 2SD1758 2SD1862. R0039A 2SB1240 2SD1862 T100

    2SB1182GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB1182GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. DPAK DPAK .050 (1.27) .030 (0.77) * PC= 1.5 W (mounted on ceramic substrate).


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    PDF 2SB1182GP 2SB1182GP

    Untitled

    Abstract: No abstract text available
    Text: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390


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    PDF Ta-25 2SB1132 2SA1900 2SB1184 2SB1182 2SB1181 OT-89)

    b1182

    Abstract: b11822 B 1182
    Text: ROHM CO LTD 4DE » E3 7 f l S û tm 0ÜDSSb3 / T ransistors 2SB1182/2SB1182F5 - 2SE81182 2SB1182P lt ° $ ^ V 7 ^ 7 'b - t iP N P Epitaxial Planar PNP Silicon Transistors - 32V , vfjiH/Dimensions Unit :mm


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    PDF 2SB1182/2SB1182F5 2SE81182 2SB1182P b1182 b11822 B 1182

    2SB1182

    Abstract: No abstract text available
    Text: h -y > v 7k$ /Transistors 2SB1182 2SB1182 xt"^ ^ y 7 ^ 7 °U -t^ P N P y 'Jn > Epitaxial Planar P N P Silicon Transistor féJÌ}/£1t:ft*llI Ìffl/Lo w Freq. Power Amp. • <$£ • rt'jiE I/'D im e n s io n s Unit : mm 1) V c e O = - 32V, lc = - 2 A , PC = 10W


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    PDF 2SB1182 2SD1758 2SD1758. 2SB1182

    2SB891

    Abstract: 2SB1240 2SB911 2SB1182 2SB1188 2SB891F 2SD1766 TO-126F BC 390 Transistor 1-02R
    Text: Transistors Medium power Transistor -32V, -2A 2SB1188/2SB1182/2SB1240/2SB891 F/ 2SB822/2SB1277/2SB911M • E x t e r n a l d im e n s io n s (U nits: m m ) •F e a tu re s 1) LOW VcE(sat). 2SB1182 2SB1188 VcE(sat) = - 0 . 5 V (Typ.) (Ic / I b = - 2 A / - 0 . 2 A )


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    PDF 2SB1188/2SB1182/2SB1240/2SB891F/ 2SB822/2SB1277/2SB911M 2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD19192/SD1227M. 2SB1188 2SB1182 SC-62 2SB1240 2SB891F 2SB891 2SB1240 2SB911 2SB1182 2SB1188 2SB891F 2SD1766 TO-126F BC 390 Transistor 1-02R

    2SB1182F5

    Abstract: 2SB1182
    Text: h 7 > y ^ ^ /Transistors 2SB1182 2SB1182F5 2SB1182/2SB1182F5 x t ° ^ ^ ' > 7 ^ 7 ° U - ^ - ^ P N P h 7 > y ' 7 $ 1 £ ijj5 S ^ jiilllffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors • 1 ) V Ce o = - 32V , v U = i > \ Ü È @ / D im e n s io n s Unit : mm)


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    PDF 2SB1182/2SB1182F5 2SB1182 2SB1182F5 2SD1758. 2SB1182F5

    2SC5119

    Abstract: 2SD2170 2SD1834 2SB1516 2SD2153 2SA1900 2SB1132 2SB1181 2SB1182 2SB1184
    Text: mmm MPT • CPT F5 • PSD Application MPT CPT F5 Circuit 82—390 P Q R -3 -1 0 0 - 2SA1900 - - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 8 2 —390 P Q R -3 -5 0 0 - - -8 0 - 0 .7


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    PDF 2SB1132 2SA1900 2SB1184 2SB1188 2SB1182 2SB1189 2SB1260 2SB1181 2SB1275 2SB1516 2SC5119 2SD2170 2SD1834 2SD2153

    Untitled

    Abstract: No abstract text available
    Text: RONfTI MPT • CPT F5 • PSD Application MPT CPT FS -3 2 -1 - 2* - 8 2 -3 9 0 POR -3 -1 0 0 - -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - _ 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 8 2 -3 9 0 P Q R -3 -5 0 0 - - -8 0 -0 .7 - 2*


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    PDF 2SB1132 2SA1900 --200k OT-89)