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    2P50 Search Results

    2P50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISLA112P50IRZ Renesas Electronics Corporation 12-Bit, 500MSPS A/D Converter Visit Renesas Electronics Corporation
    ISLA212P50IRZ Renesas Electronics Corporation 12-Bit, 500MSPS ADC Visit Renesas Electronics Corporation
    ISLA112P50/55210EV1Z Renesas Electronics Corporation Ultra-Low Power Broadband 8- to 14-Bit Data Acquisition Kit Visit Renesas Electronics Corporation
    82P5088BBG Renesas Electronics Corporation 8-Channel T1/E1/J1 Short Haul/Long Haul LIU Visit Renesas Electronics Corporation
    KAD5512P-50Q72 Renesas Electronics Corporation 12-Bit, 500MSPS Single-Channel ADC, with LVDS/LVCMOS Outputs Visit Renesas Electronics Corporation
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    2P50 Price and Stock

    Eaton Bussmann PT08R472P50

    SENSOR PTC 470OHM 50% 0805
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    DigiKey PT08R472P50 Digi-Reel 7,995 1
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    PT08R472P50 Cut Tape 7,995 1
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    PT08R472P50 Reel 4,000 4,000
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    Sager PT08R472P50 4,000
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    Eaton Bussmann PT06R472P50

    SENSOR PTC 470OHM 50% 0603
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    DigiKey PT06R472P50 Digi-Reel 7,935 1
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    PT06R472P50 Cut Tape 7,935 1
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    PT06R472P50 Reel 4,000 4,000
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    Sager PT06R472P50 4,000
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    CIT Relay & Switch CT1102P5.0F100

    SWITCH TACTILE SPST-NO 0.05A 50V
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    DigiKey CT1102P5.0F100 Bulk 2,000 1
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    CIT Relay & Switch CT1102P5.0F260

    SWITCH TACTILE SPST-NO 0.05A 50V
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    DigiKey CT1102P5.0F260 Bulk 1,953 1
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    CIT Relay & Switch CT1102P5.0F160

    SWITCH TACTILE SPST-NO 0.05A 50V
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    DigiKey CT1102P5.0F160 Bulk 1,900 1
    • 1 $0.26
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    2P50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips 3h1 ferrite material

    Abstract: 3h1 ferrite material ferrite material 3c85 philips 3h1 ferrite philips ferrite 4b1 philips 3e1 ferrite material philips 3C85 ferrite material application Mg-Zn Ferrites Philips Components, Soft Ferrites 3C11 ferrite 3h1
    Text: MAIN MAIN MENU MENU SOFT FERRITE MATERIALS Philips Components Soft Ferrites Properties specified in this section are related to room temperature 25 °C unless otherwise stated. They have been measured on sintered, non ground ring cores of dimensions ∅25 x ∅15 × 10 mm which are not


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    PHILIPS toroidal core 2P80

    Abstract: PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod
    Text: Soft Ferrites and Accessories Contents Introduction Quality Environmental aspects of soft ferrites Ordering information Applications Literature and reference publications Ferrite materials survey and specifications - Ferrite materials survey - Material specifications and graphs


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    PDF CBW204 TN33/20/11 TN33/20/11-2P40 TN33/20/11-2P50 TN33/20/11-2P65 TN33/20/11-2P80 TN33/20/11-2P90 PHILIPS toroidal core 2P80 PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod

    2P80

    Abstract: 2P40 2P50 PA11 TN12
    Text: Philips Components Product specification Iron powder ring cores toroids TN12/8/4.4 RING CORES (TOROIDS) Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 3.30 mm−1 Ve effective volume 290 mm3 Ie effective length 30.9 mm Ae


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    PDF TN12/8/4 MGC327 4-2P40 4-2P50 4-2P65 2P80 2P40 2P50 PA11 TN12

    MCP2021

    Abstract: No abstract text available
    Text: MCP2021/2/1P/2P LIN Transceiver with Voltage Regulator Features: Description: • The MCP2021/2/1P/2P are Compliant with LIN Bus Specifications 1.3, 2.0, and 2.1 and are Compliant to SAE J2602 • Support Baud Rates up to 20 kBaudwith LIN-compatible Output Driver


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    PDF MCP2021/2/1P/2P MCP2021/2/1P/2P J2602 DS22018G-page MCP2021

    ferroxcube 31 toroid core

    Abstract: 4-2P80 2P80 PA11 iron powder ferroxcube
    Text: 2002-05-15 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 58-759-01 Toroid 2P80 7,5x4,1x3 mm 58-759-19 Toroid 2P80 12x8x4,4 mm 58-759-35 Toroid 2P80 20x13x6 mm 58-759-43 Toroid 2P80 24x15x7,5 mm


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    PDF 12x8x4 20x13x6 24x15x7 27x15x11 1/3-2P80 TN12/8/4 4-2P80 TN20/13/6-2P80 TN24/15/7 5-2P80 ferroxcube 31 toroid core 4-2P80 2P80 PA11 iron powder ferroxcube

    2021500E

    Abstract: SAE J2602 transceiver 2021P50E dual marking code 1p Voltage Regulator 50v MCP2021P 2021500 202-150 MCP2021
    Text: MCP2021/2/1P/2P LIN Transceiver with Voltage Regulator Features Description • The MCP2021/2/1P/2P are compliant with LIN Bus Specifications 1.3, 2.0, and 2.1 and are compliant to SAE J2602 • Support Baud Rates up to 20 Kbaud with LIN-compatible output driver


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    PDF MCP2021/2/1P/2P MCP2021/2/1P/2P J2602 DS22018F-page 2021500E SAE J2602 transceiver 2021P50E dual marking code 1p Voltage Regulator 50v MCP2021P 2021500 202-150 MCP2021

    diode ae46

    Abstract: DIODE BA40 abb s 212 ae47 diode AH44 ENE3925-LFQP144 ps223 CI-101 bf37 mxm-III
    Text: A B C MS-1651 VER : 0.B D E +3V +5V DC JACK & Selector Penryn Page 3,4 1 2 3 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Penryn-1 HOST BUS 04 : Penryn-2 (POWER/GND) 05 : CANTIGA-1 (HOST BUS) 06 : CANTIGA-2 (DMI/VGA) 07 : CANTIGA-3 (DDR) 08 : CANTIGA-4 (POWER-1)


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    PDF MS-1651 TPS51120 ENE3925-LFQP144) ICS9LPR113) RTL8111B) 120ms 150ms MS-1651 diode ae46 DIODE BA40 abb s 212 ae47 diode AH44 ENE3925-LFQP144 ps223 CI-101 bf37 mxm-III

    2P50EG

    Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
    Text: 2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed


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    PDF MTP2P50E O-220 MTP2P50E/D 2P50EG 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes

    Mn-Zn Ferrites

    Abstract: Mg-Zn Ferrites permittivity ferrite 4b1 application Mg-Zn Ferrites MgZn SOFT FERRITE POWDER 3c92 ferrite 4B1 soft ferrite ferroxcube 4a11 Rod 3B1
    Text: Ferroxcube Soft Ferrites Ferrite materials survey CBW629 2001 Jan 20 1 Ferroxcube Soft Ferrites Ferrite materials survey Properties specified in this section are related to room temperature 25 °C unless otherwise stated. They have been measured on sintered, non ground ring cores of dimensions ∅25 x ∅15 × 10 mm which are


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    PDF CBW629 Mn-Zn Ferrites Mg-Zn Ferrites permittivity ferrite 4b1 application Mg-Zn Ferrites MgZn SOFT FERRITE POWDER 3c92 ferrite 4B1 soft ferrite ferroxcube 4a11 Rod 3B1

    2P80

    Abstract: 2P40 2P50 CBW202 PA11 2P65
    Text: Philips Components Product specification Iron powder ring cores toroids TN24/15/7.5 RING CORES (TOROIDS) Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 1.76 mm−1 Ve effective volume 1895 mm3 Ie effective length 57.8 mm Ae


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    PDF TN24/15/7 CBW202 5-2P40 5-2P50 5-2P65 2P80 2P40 2P50 CBW202 PA11 2P65

    MTP8N10

    Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M 2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1


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    PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP8N10 mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20

    MTP2P45

    Abstract: power mosfets to 204aa MTH8P20 MTM2P45 204AA T0204AA 220AB MTP12P10 MTM2P50 T0-204AA
    Text: POWER TRANSISTORS — TMOS continued V b R (D SS ) (Volt*) M in (Ohm s) M ax (Am p) 500 6 3 D S ( o n ) @ >D Device 450 M TM 2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (Watts) M ax Package 2 75 204AA M T P 2P 50 220AB M TM 2P45 20 4 A A 220 A 8 MTP2P45 200


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    PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 power mosfets to 204aa MTH8P20 MTM2P45 204AA T0204AA 220AB MTP12P10 T0-204AA

    P-Channel Power MOSFETS mtm2p50

    Abstract: MTM2P50 MTP3N80 MTM2N45 MTM6N90 MTM4N50 MTM2N85 IRF450 MTM1N100 MTP2P45
    Text: POWER TRANSISTORS — TMOS continued V b R (D SS ) (Volt*) M in (Ohm s) M ax (Am p) 500 6 3 D S ( o n ) @ >D Device 450 M TM 2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (Watts) M ax Package 2 75 204AA M T P 2P 50 220AB M TM 2P45 20 4 A A 220 A 8 MTP2P45 200


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    PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 P-Channel Power MOSFETS mtm2p50 MTP3N80 MTM2N45 MTM6N90 MTM4N50 MTM2N85 IRF450 MTM1N100 MTP2P45

    MTH8P20

    Abstract: MTH13N50 MTH7N50 MTH30N20 MTH25N10 MTH15N20 MTH35N15 MTH20N15 MTH40N06 MTP2P45
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M 2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1


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    PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTH8P20 MTH13N50 MTH7N50 MTH30N20 MTH25N10 MTH15N20 MTH35N15 MTH20N15 MTH40N06 MTP2P45

    mtp15n06

    Abstract: MTP12P05 mtp25n06 MTP3055A MTP14N05A BUZ10 MTP12p06 MTA6N10 T0-225AA MTP2P50
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M 2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1


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    PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 mtp15n06 MTP12P05 mtp25n06 MTP3055A MTP14N05A BUZ10 MTP12p06 MTA6N10 T0-225AA MTP2P50

    Untitled

    Abstract: No abstract text available
    Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TD BEL FUSE INC. AND SHALL NDT BE COPIED, RE PR OD UC ED DR DISCLOSED WI TH OU T THE W R IT TE N A P P R O V A L DF BEL FUSE INC. LEDI PIN 13 PELAR ITY PIN14 CDLDR + YELLDW ELEC TR IC AL C H A RACTERISTICS


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    PDF PIN14 f/80M 30MHz 30MHz 80MHz 80MHz 100MHz 100kHz 100MHz L8261A1T23-F

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


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    PDF DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20

    2N80

    Abstract: 5P30
    Text: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTING*G LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _


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    PDF DIP-14 DIP-G14* 2N100 3KI33 3N100 5N100 2N80 5P30

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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    PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    LT3973-3.3

    Abstract: L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3
    Text: m o le x £ros$ p eference Numbers Old P a r t i Hew Part i O U P a rti New Part i Old Part # New Part i Old P a r t i 07262M 07 84581-0001 0 93 5 6 K 0 7 8 45 6 6 -5 03 5 0 94 6 2 K 0 7 84566-5041 09566M 07 8 4 5 6 6 -0 0 6 5 07264M 07 8 4 5 8 1 -0 00 0 0 93 5 7 K 0 7


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    PDF 07262M 09356K07 09462K07 09566M 07264M 09357K07 09462M 09567K07 07362M 09358K07 LT3973-3.3 L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3

    MTM8P20

    Abstract: IRF3203 MTM12N20 DJ05AH MTM15N35 MTM3N35 MTM4N35 mtm5n35 MTM15N40 MTP2P45
    Text: POWER TRANSISTORS — TM OS M ETAL continued Metal TMOS Power M OSFETs — TO-204AA (continued) C A S E 1-04 an d C A S E 1-05 rDS(on) @ 'D 'D(Cont) (Amp) Max PO @ T c = 25°C (Wans) Max V BR(DSS) (Volts) Min (Ohms) Max (Amp) 450 1.5 2 M TM 4N45 4 75 1.10


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    PDF O-204AA MTM4N45 IRF443 IRF441 MTM7N45 IRF453 IRF451 MTM15N45 MTM3N40 IRF322 MTM8P20 IRF3203 MTM12N20 DJ05AH MTM15N35 MTM3N35 MTM4N35 mtm5n35 MTM15N40 MTP2P45

    Untitled

    Abstract: No abstract text available
    Text: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST 2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA 2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P -C h a n n e l M O S F E T In A H erm etic P a ck a g e FEATURES •


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    PDF OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA

    2N25

    Abstract: 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45
    Text: E S C ELECTRONICS CORP SOE D • 3037257 OOODMÖLi T57 MECE □IP &SMD DELAY LINES SERIES D IP -14 IO TAPS •14 PIN & 16 PIN PACKAGES □IP Si SURFACE MOUNTINB *Q LEADS PASSIVE SERIES '% H i ¡7 T -H 7 - 13 AND DIP-G14* * Surface Mount G Lead Package IMPEDANCE ± 10%


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    PDF DIP-14 DIP-G14 300atthe\ 100PCEN G1N25. 1N100 2N100 3N100 5N100 2N25 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45