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    2N6533 Price and Stock

    TURCK Inc TC8S 2-N653-3M-SB 3T

    Vac |Turck TC8S 2-N653-3M-SB 3T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TC8S 2-N653-3M-SB 3T Bulk 1
    • 1 $45.1
    • 10 $45.1
    • 100 $45.1
    • 1000 $45.1
    • 10000 $45.1
    		Buy Now

    SGS Semiconductor Ltd 2N6533

    TRANSISTOR,BJT,DARLINGTON,NPN,8A I(C),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6533 1
    • 1 $12
    • 10 $8
    • 100 $8
    • 1000 $8
    • 10000 $8
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    2N6533 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6533 Central Semiconductor NPN Power Transistor, TO-220 Original PDF
    2N6533 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6533 Central Semiconductor Power Darlington Transistors (Epoxy) Scan PDF
    2N6533 Central Semiconductor Power Darlington Transistors (Epoxy) Scan PDF
    2N6533 Central Semiconductor Power Transistors Scan PDF
    2N6533 General Electric 8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. Scan PDF
    2N6533 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6533 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6533 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6533 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6533 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6533 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6533 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6533

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6533 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING


    Original     		PDF 2N6533 O-220 O-220) 2N6533

    2N6533

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2N6533 Silicon Power Transistors DESCRIPTION ・DARLINGTON ・With TO-220 package APPLICATIONS ・Power switching ・Hammer drivers ・Series and shunt regulators ・Audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2N6533 O-220 O-220) 2N6533

    NPN Transistor 10A 24V

    Abstract: NPN Transistor TO220 VCEO 80V 100V POWER TRANSISTOR TO-220 2N6530 2N6533 NPN Transistor VCEO 80V 100V hfe 100 2N6532 2N6531 transistor 5k NPN Transistor TO220 VCEO 50v i 10A
    Text: DATA SHEET 2N6530 2N6531 2N6532 2N6533 NPN POWER TRANSISTOR TO-220 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. MAXIMUM RATINGS: TC=25°C unless otherwise noted


    Original     		PDF 2N6530 2N6531 2N6532 2N6533 O-220 2N6530 O-220 NPN Transistor 10A 24V NPN Transistor TO220 VCEO 80V 100V POWER TRANSISTOR TO-220 2N6533 NPN Transistor VCEO 80V 100V hfe 100 2N6532 2N6531 transistor 5k NPN Transistor TO220 VCEO 50v i 10A

    rosemount 118mf

    Abstract: OPTO MOS SWITCH OFM 2N5160 equivalent LT1001 KELVIN-VARLEY DIVIDER ultronix 105A 2n5160 OFM-1A 2N5160 ss LT301A
    Text: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


    Original     		PDF LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) rosemount 118mf OPTO MOS SWITCH OFM 2N5160 equivalent LT1001 KELVIN-VARLEY DIVIDER ultronix 105A 2n5160 OFM-1A 2N5160 ss LT301A

    YSI 44007

    Abstract: YSI 400 thermistor YSI 44018 Vernitron ceramic filters rosemount 118mf lm324 4mA to 20mA transmitter LT1013 LM358 output drive circuits phase reversal LT1013 anemometer lt1043
    Text: LT1013/LT1014 Quad Precision Op Amp LT1014 Dual Precision Op Amp (LT1013) U DESCRIPTION FEATURES Single Supply Operation Input Voltage Range Extends to Ground Output Swings to Ground while Sinking Current Pin Compatible to 1458 and 324 with Precision Specs


    Original     		PDF LT1013/LT1014 LT1014) LT1013) 0P-07, 07pA/Hz LT1014 152mm) 254mm) YSI 44007 YSI 400 thermistor YSI 44018 Vernitron ceramic filters rosemount 118mf lm324 4mA to 20mA transmitter LT1013 LM358 output drive circuits phase reversal LT1013 anemometer lt1043

    Untitled

    Abstract: No abstract text available
    Text: LT1002 Dual, Matched Precision Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1002 dual, matched precision operational amplifiers combine excellent individual amplifier performance with tight matching and temperature tracking between


    Original     		PDF LT1002 LT1002A 110dB

    MJE1300

    Abstract: No abstract text available
    Text: TO-220 Power Transistors TO-220 Case TO-220FP Full Pak • Fully Isolated Standard TYPE NO. IC PD A MAX (W) 2N5294 4.0 2N5296 2N5298 BVCBO BVCEO hFE @ IC VCE(SAT) @ IC (V) MIN (V) MIN MIN MAX 36 80 70 30 4.0 36 60 40 4.0 36 80 60 2N5490 7.0 50 60 2N5492


    Original     		PDF O-220 O-220 O-220FP 2N6040 2N6041 2N6042 2N6124 2N6125 2N6126 2N6132 MJE1300

    LT1013

    Abstract: mc1458 cpi strain gauge amplifier lm324 rtd circuits with lt1014 rosemount TEMPERATURE SENSOR 118MF LT1013 anemometer YSI 400 thermistor rosemount 118mf how to use STRAIN GAUGE with lm358 YSI 44018
    Text: LT1013/LT1014 Quad Precision Op Amp LT1014 Dual Precision Op Amp (LT1013) DESCRIPTIO U FEATURES Single Supply Operation Input Voltage Range Extends to Ground Output Swings to Ground while Sinking Current Pin Compatible to 1458 and 324 with Precision Specs


    Original     		PDF LT1013/LT1014 LT1014) LT1013) 0P-07, 07pA/Hz LT1014 220pF 1N5821 LT1013 2N5262 LT1013 mc1458 cpi strain gauge amplifier lm324 rtd circuits with lt1014 rosemount TEMPERATURE SENSOR 118MF LT1013 anemometer YSI 400 thermistor rosemount 118mf how to use STRAIN GAUGE with lm358 YSI 44018

    ultronix 105A

    Abstract: LT1001 118MF LM129 LT1001AM LT1001C LT1002 74C9 Transistor 2N3866 2N3866 equivalent
    Text: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


    Original     		PDF LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) ultronix 105A LT1001 118MF LM129 LT1001AM LT1001C LT1002 74C9 Transistor 2N3866 2N3866 equivalent

    ssp11n60s5

    Abstract: SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5
    Text: STI Type: SSP11N60S5 Notes: Breakdown Voltage: Continuous Current: RDS on Ohm: Trans Conductance Mhos: Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: Polarity:


    Original     		PDF SSP11N60S5 SSP2N90A O-220AB/TO-220 SSP2N80A O-204AA/TO-3: TIP536 TIP538 ssp11n60s5 SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5

    MJE13009

    Abstract: MJE-13009 D44C11 Data MJE700T BU406 bu406d BU407D mje13007 mje13009 equivalent MJE800T equivalent
    Text: TO-220 Power Transistors TO-220 Case Continued TO-220FP Full Pak • Fully Isolated Standard TYPE NO. Optional IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 10 75 2.5 2N6530


    Original     		PDF O-220 O-220 O-220FP 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 MJE13009 MJE-13009 D44C11 Data MJE700T BU406 bu406d BU407D mje13007 mje13009 equivalent MJE800T equivalent

    pe-6197

    Abstract: 74C04 op amp transistor current booster circuit MJE305 linear an18 12BH7A 1000v to 2000v vac inverter circuit 2n5160 SCR c106 PIN CONFIGURATION 2N3866
    Text: Application Note 18 March 1986 Power Gain Stages for Monolithic Amplifiers Jim Williams Most monolithic amplifiers cannot supply more than a few hundred milliwatts of output power. Standard IC processing techniques set device supply levels at 36V, limiting available output swing. Additionally, supplying currents beyond


    Original     		PDF an18f AN18-16 pe-6197 74C04 op amp transistor current booster circuit MJE305 linear an18 12BH7A 1000v to 2000v vac inverter circuit 2n5160 SCR c106 PIN CONFIGURATION 2N3866

    s43a

    Abstract: 2N6533 2N6531 2N6530 2N6532 1000 watts schematic diagram of solid state audio amplifier RCA 0798 2N6532 RCA A09 monolithic amplifier
    Text: 3Ö750Ö1 DQ17HS3 0 | } .u a rn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N6530, 2N6532 Gain of 1000 at 3 A (2N6533) Gain of 500 at 3 A(2N6531)


    OCR Scan     		PDF 2N6530, 2N6531, 2N6532, 2N6533 2N6532) 2N6533) 2N6531) 92CS-39969 O-220AB s43a 2N6533 2N6531 2N6530 2N6532 1000 watts schematic diagram of solid state audio amplifier RCA 0798 2N6532 RCA A09 monolithic amplifier

    2N6533

    Abstract: Ha 100b 2cs24 2n651
    Text: HARRI S S E I U C O N D S E CT OR SbE » • 43D 22 71 0 D 4 D S 7 2 7T1 B I H A S 2N6530,2N6531,2N6532, 2N6533 File Number 8 7 3 7 = 3 3 -2 ? 8-Ampere N-P-N Darlington Power Transistors 80,100,120 Volts, 60 Watts Gain of 1000 at 5 A 2N6530, 2N6532 Gain of 1000 at 3 A (2N6533)


    OCR Scan     		PDF 2N6530 2N6531 2N6532, 2N6533 2N6530, 2N6532) 2N6533) 2N6531) 92CS-39» O-22CAB 2N6533 Ha 100b 2cs24 2n651

    n6532

    Abstract: No abstract text available
    Text: 3Ö750Ö1 DQ17HS3 0 | } .u arn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N 6530, 2N 6532 Gain of 1000 at 3 A (2N 6533) Gain of 500 at 3 A (2 N 6 5 3 1 )


    OCR Scan     		PDF DQ17HS3 2N6530, 2N6531, 2N6532, 2N6533 -220AB RCA-2N6530, P60I9 n6532

    Untitled

    Abstract: No abstract text available
    Text: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50


    OCR Scan     		PDF BDW23 BDW24 BDW23A BDW24A BDW23B BDW24B BDW23C BDW24C BDX53E BDX54E

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    2N6530

    Abstract: MJE700T
    Text: Power Transistors TO-220 Case Continued TY P f NO, 1C m MW PNP PD m MAX BVépo BVCtO m VCE(SAT) @ 1C h re (A) m m m MB MAX (V) (A) fT (MHz) Iflffcl mnf MAX 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499 5.0


    OCR Scan     		PDF O-220 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 BU406 BU406D MJE700T

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499


    OCR Scan     		PDF O-220 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 D44H11 D45H11

    tic 1260 scr texas

    Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
    Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.


    OCR Scan     		PDF

    BDX53E

    Abstract: BUB06 ST BDX53C BDW23 BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
    Text: 1989963 b l de CEN TR A L I SEMICONDUCTOR oocm ns a 61C 00195'^ W~ POWER DARLINGTON TRANSISTORS EPOXY it H le = le NO. Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mhz hFE @IC Min - Max NPN PNP Amps BDW23 BDW24 : 6.0 45 50 750 - 20,000


    OCR Scan     		PDF t-33-29 T-33-33 BDW23 BDW24 BDW23A BDW24A BDW23B BDW24B BDW23C BDW24C BDX53E BUB06 ST BDX53C BDW24

    BUB06

    Abstract: ST BDX53C BDW23 BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B BDW24C
    Text: Î989963 CENTRAL SEMI C O N D U C T OR bï de I TYPE 61C 00195'^ T-33-29 oocmns a T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = _ NO. Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mhz hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0


    OCR Scan     		PDF T-33-29 T-33-33 BDW23 BDW24 BDW23A BDW24A BDW23B BDW24B BDW23C BDW24C BUB06 ST BDX53C BDW24

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711