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    2N60E Search Results

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    2N60E Price and Stock

    Vishay Siliconix SIHA12N60E-GE3

    N-CHANNEL 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHA12N60E-GE3 Reel 1,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.10174
    • 10000 $1.10174
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    Vishay Siliconix SIHA22N60EL-GE3

    N-CHANNEL600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHA22N60EL-GE3 Cut Tape 995 1
    • 1 $5.09
    • 10 $3.381
    • 100 $5.09
    • 1000 $1.99852
    • 10000 $1.99852
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    Vishay Siliconix SIHF22N60E-GE3

    MOSFET N-CH 600V 21A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF22N60E-GE3 Tube 947 1
    • 1 $4.96
    • 10 $4.96
    • 100 $4.96
    • 1000 $1.8125
    • 10000 $1.8125
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    Vishay Siliconix SIHP052N60EF-GE3

    MOSFET EF SERIES TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP052N60EF-GE3 Tube 934 1
    • 1 $7.46
    • 10 $7.46
    • 100 $7.46
    • 1000 $3.12376
    • 10000 $3.12376
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    Vishay Siliconix SIHA22N60EF-GE3

    MOSFET N-CH 600V 19A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHA22N60EF-GE3 Tube 929 1
    • 1 $4.42
    • 10 $2.92
    • 100 $4.42
    • 1000 $1.58294
    • 10000 $1.5525
    		Buy Now
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    2N60E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 2N60-E 2N60-E QW-R502-974

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-053

    2N60E

    Abstract: 600V 2A SOT223 MOSFET N-channel
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 2N60-E 2N60-E QW-R502-974 2N60E 600V 2A SOT223 MOSFET N-channel

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 2N60-E 2N60-E QW-R502-974.

    2N60E

    Abstract: MTA2N60E 1N60E MTA1N60E MTA1N60 1B5 zener diode
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA1N60E Fully Isolated TMOS E-FET™ Pow er Field E ffect Transistor Motorola Prcforrvd Devio« N-Channel Enhancement-Mode Silicon Gate Isolated TO-22Q TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS on - 8-0 OHM


    OCR Scan     		PDF O-22Q head4-40 AN1040. b3b7254 2N60E MTA2N60E 1N60E MTA1N60E MTA1N60 1B5 zener diode