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    2N5301, Search Results

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    2N5301, Price and Stock

    Central Semiconductor Corp 2N5301-PBFREE

    TRANS NPN 40V 30A TO3
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    DigiKey 2N5301-PBFREE Tube 273 1
    • 1 $7.77
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    Microchip Technology Inc 2N5301

    NPN TRANSISTOR
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    DigiKey 2N5301 Bulk 100
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    Avnet Americas 2N5301 Bulk 36 Weeks 100
    • 1 $60.0838
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    • 100 $53.001
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    Mouser Electronics 2N5301
    • 1 $61.31
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    Newark 2N5301 Bulk 100
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    Microchip Technology Inc 2N5301 36 Weeks
    • 1 $61.31
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    Onlinecomponents.com 2N5301
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    NAC 2N5301 Tray 5
    • 1 $62.56
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    Master Electronics 2N5301
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    Motorola Semiconductor Products 2N5301

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    Bristol Electronics 2N5301 39
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    Quest Components 2N5301 31
    • 1 $3.6
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    2N5301 20
    • 1 $9.0405
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    2N5301 3
    • 1 $3.6
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    2N5301 1
    • 1 $3.45
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    2N5301 1
    • 1 $9
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    ComSIT USA 2N5301 611
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    RCA 2N5301

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    Bristol Electronics 2N5301 9 1
    • 1 $6.72
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    Quest Components 2N5301 7
    • 1 $9
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    SSI 2N5301

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    Bristol Electronics 2N5301 4 1
    • 1 $6.72
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    Quest Components 2N5301 3
    • 1 $9
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    Find more 2N5301, price and stock on Findchips.com

    2N5301, Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5301 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 40V 30A TO-3 Original PDF
    2N5301 On Semiconductor POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
    2N5301 On Semiconductor High-Power NPN Silicon Transistor Original PDF
    2N5301 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
    2N5301 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5301 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N5301 Diode Transistor Transistor Short Form Data Scan PDF
    2N5301 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N5301 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5301 General Diode Transistor Selection Guide Scan PDF
    2N5301 General Electric High current, high power, high speed N-P-N power transistor. 40V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
    2N5301 General Transistor Power Transistor Selection Guide Scan PDF
    2N5301 Mospec POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
    2N5301 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5301 Motorola The European Selection Data Book 1976 Scan PDF
    2N5301 Motorola European Master Selection Guide 1986 Scan PDF
    2N5301 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5301 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5301 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5301 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N5301, Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n4399

    Abstract: 2N4398
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PNP SILICON HIGH-POWER TRANSISTORS PNP 2N4398 2N4399 2N5745 General Purpose use In amplifier and switching applications. FEATURES: *DC Current Gain Specified-1.0 to 30 A


    Original     		PDF 2N4398 2N4399 2N5745 2N4398, 2N5301 2N5302 2N5303 2n4399 2N4398

    2IM5301

    Abstract: CE 5302
    Text: TE X A S IN S T R -COPTO} ta de jaihiTat, o o a b s ^ a o 62C S 9 e i 7 2 6 TEXAS INSTR <OPTO 36593 D 2N5301,2N5302,2N5303 N-P-N SILICON POWER TRANSISTORS FEBRUARY 1 9 6 9 - REVISED OCTOBER 1 9 8 4 Designed for Complementary Use W ith 2N4398, 2N4399 200 W a t 25°C Case Temperature


    OCR Scan     		PDF 2N5301 2N5302 2N5303 2N4398, 2N4399 2IM5301, 2N5302) 2N5303) T-33-/S2N5301 2IM5301 CE 5302

    2N5301

    Abstract: 2N5303 2N4398 2N4399 2N5302 2N6303 TRANSISTOR 2n5302 2n5302 transistor
    Text: TE XA S IN S TR -COPTO} ta de jaTtiTat, □03f3s c]3 62C S 9 e i 7 2 6 TEXAS INSTR <OPTO 36593 D 2N5301,2N5302,2N5303 N-P-N SILICON POWER TRANSISTORS FEBRUARY 19 6 9 - REVISED OCTOBER 198 4 Designed for Complementary Use With 2N4398, 2N4399 200 W at 25°C Case Temperature


    OCR Scan     		PDF 9S1726 2N5301 2N5302 2N5303 2N4398, 2N4399 2N5301, 2N5302) 2N5303) 2N4398 2N4399 2N6303 TRANSISTOR 2n5302 2n5302 transistor

    TIP 110 transistor

    Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055

    Untitled

    Abstract: No abstract text available
    Text: 4ÔE D 0 1 3 3 1 0 7 GGDD42D 7 b l H S N L B G137 chip family The G 137 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation power devices. SEMELAB LT]> 'î- 3 5 'O l • UP TO 35 AMPS


    OCR Scan     		PDF GGDD42D -550/xm 19mils IMPRUV40 BUX10 BDY58 BUX11 BUW91 BUX12 BUV42

    2N4399

    Abstract: 2N4398 2N5301 2N5302 2N5303 2N5745
    Text: PNP SILICON HIGH-POWER TRANSISTORS PNP 2N4398 2N4399 2N5745 General Purpose use in amplifier and switching applications. Boca Semiconducotor Corp. fe a tu re s : *DC Current Gain Specified-1.0 to 30 A * Low Collector-Emitter Saturation Voltage - RSP 75 V Max @ 'c = 10 A - 2N4398, 2N4399


    OCR Scan     		PDF 2N4398, 2N4399 2N5745 2N5301 2N5302 2N5303 2N4398 2N5303 2N5745

    2N5302

    Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303
    Text: ÆàMOS PEC NPN SILICON HIGH-POWER TRANSISTORS NPN General Purpose use in power amplifier and switching circuit applications. 2N5301 2N5302 2N5303 FEATURES: * DC Current Gain Specified- 1.0 to 30 A * Low Collector-Emitter Saturation Voltage v CE<sat = °-75 v M ax) @ lc = 10 A - 2N5301, 2N5302


    OCR Scan     		PDF 2N5301, 2N5302 2N5303, 2N4398 2N4399 2N5745 2N5301 2N5303 2N5745 N5303

    2n5302

    Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi D*vlc* . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)


    OCR Scan     		PDF 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N510 2N5301 2n5302 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp