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    2N3906U Search Results

    2N3906U Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3906U Korea Electronics TRANS GP BJT PNP 40V 0.2A 3USM Original PDF
    2N3906U Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF
    2N3906U Korea Electronics Switching Transistor Scan PDF

    2N3906U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3906U

    Abstract: 2N3904U
    Text: SEMICONDUCTOR 2N3906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		PDF 2N3906U -50nA -50mA, 2N3904U. x10-4 -10mA, -10mA -50mA 2N3906U 2N3904U

    ZA12

    Abstract: 2N3906U marking za
    Text: SEMICONDUCTOR 2N3906U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZA 1 2 Item Marking Description Device Mark ZA 2N3906U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF 2N3906U ZA12 2N3906U marking za

    2N3904U

    Abstract: 2N3906U 1N916
    Text: SEMICONDUCTOR 2N3906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B M M DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + D E 0.3+0.10/-0.05 _ 0.20 2.10 + Excellent DC Current Gain Linearity.


    Original     		PDF 2N3906U -50nA -50mA, 2N3904U. 100mA 2N3904U 2N3906U 1N916

    2N3906U

    Abstract: 1N916 2N3904U
    Text: SEMICONDUCTOR 2N3906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B M M FEATURES ᴌLow Leakage Current D 3 1 G : ICEX=-50nA Max. , IBL=-50nA(Max.) J A 2 @VCE=-30V, VEB=-3V. ᴌExcellent DC Current Gain Linearity.


    Original     		PDF 2N3906U -50nA -50mA, 2N3904U. 100mA 2N3906U 1N916 2N3904U

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


    Original     		PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    2N3904U

    Abstract: 1N916 2N3906U
    Text: SEMICONDUCTOR 2N3904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B M M FEATURES ᴌLow Leakage Current D 3 1 G : ICEX=50nA Max. , IBL=50nA(Max.) J A 2 @VCE=30V, VEB=3V. ᴌExcellent DC Current Gain Linearity.


    Original     		PDF 2N3904U 2N3906U. 100mA 2N3904U 1N916 2N3906U

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    2N3904U

    Abstract: 2N3906U 1N916
    Text: SEMICONDUCTOR 2N3904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B M M DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + D E 0.3+0.10/-0.05 _ 0.20 2.10 + Excellent DC Current Gain Linearity.


    Original     		PDF 2N3904U 2N3906U. 100mA 2N3904U 2N3906U 1N916

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    2N3904U

    Abstract: 2N3906U
    Text: SEMICONDUCTOR 2N3904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		PDF 2N3904U 2N3906U. x10-4 100mA Width300 2N3904U 2N3906U

    2N3906U

    Abstract: Scans-00124840
    Text: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @VCe =-30V, V eb=-3V .


    OCR Scan     		PDF 2N3906U -50nA -50mA, 300ns 1n916 20/xs 300//S, 2N3906U Scans-00124840

    2N3904U

    Abstract: 2N3906U
    Text: SEM IC O N D U C T O R 2N3906U TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SW ITCHING APPLICATION. FEATURES DIM A • Low Leakage Current B C : Icgj^-SOnAiMax. , IBL=-50nA Max.) D E @VCe=-3 OV, V EB=-3 V. G H • Excellent DC Current Gain Linearity.


    OCR Scan     		PDF 2N3906U -50nA -50mA, 2N3904U. 42db0 300/iS, 2N3904U 2N3906U

    2N3906U

    Abstract: 1N916 2N3904U
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA Max. , lBL=~50nA(Max.) @VCe=-30V, V eb=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage


    OCR Scan     		PDF 2N3906U -50nA -50mA, 2N3904U. 2N3906U 1N916 2N3904U

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage


    OCR Scan     		PDF 2N3904U 2N3906U.

    2N3904U

    Abstract: 1N916 2N3906U
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , IBL=50nA(M ax.) DIM Veb=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage


    OCR Scan     		PDF 2N3904U 2N3906U. 2N3904U 1N916 2N3906U

    2N3904U

    Abstract: 2N3906U 1N916 20MS ST30
    Text: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=50nA M ax. , lBL=50nA(M ax.) Œ2 @ V ce=30V, V eb=3V. • Excellent DC Current Gain Linearity.


    OCR Scan     		PDF 2N3904U 2N3906U. 2N3904U 2N3906U 1N916 20MS ST30