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Fairchild Semiconductor Corporation 2N3858A
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Bristol Electronics	2N3858A		7			1 - 10 - 100 - 1000 - 10000 -	Get Quote
National Semiconductor Corporation 2N3858A NSC 2N3858A
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2N3858 Datasheets (53)

Part	Manufacturer	Description	Datasheet Type	PDF
2N3858	Allegro MicroSystems	General Purpose Bipolar Transistor, NPN, 30 MinV, TO-92, 3-Pin	Scan	PDF
2N3858	Allegro MicroSystems	Bipolar transistor	Scan	PDF
2N3858	Central Semiconductor	NPN EPOXY - LOW NOISE LEVEL AMPLIFIER / NPN EPOXY - RF/IF OSCILLATOR	Scan	PDF
2N3858	Central Semiconductor	Low Noise Level Amp / Oscillator / Switching Transistors	Scan	PDF
2N3858	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
2N3858	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
2N3858	General Electric	Semiconductor Data Book 1971	Scan	PDF
2N3858	General Electric	Semiconductor Data Handbook 1977	Scan	PDF
2N3858	General Electric	Planar epitaxial passivated NPN Silicon Transistor. 30V, 100mA.	Scan	PDF
2N3858	Micro Electronics	Semiconductor Device Data Book	Scan	PDF
2N3858	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N3858	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N3858	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N3858	Unknown	Vintage Transistor Datasheets	Scan	PDF

2N3858	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N3858	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N3858	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N3858	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N3858	Unknown	GE Transistor Specifications	Scan	PDF
2N3858	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2N3858 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2N3858 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)18 V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N3858 Freq90M
2N2458 Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386	Original	PDF	2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A 2N2458 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	PDF	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
bfw34 diode Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386	Original	PDF	2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A bfw34 diode LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
2N3859 Abstract: 2N3860 2N3859A 2N3659 2N3858 E1307 2N3868 BA 4213 2N3658 2N3858-60 Text: SOLI» STATE ÜÏ D E \| 3Ö7S0Ö1 D G l T ^ n - Signal Transistors 2N3858-60, 2N3858A, 2N3859A Silicon Transistors TO-98 The GE/RCA 2 N 3 858,2N 3859 and 2N3860 are planar epitaxlal passivated NPN silicon transistors designed primarily for	OCR Scan	PDF	2N3858-60, 2N3858A, 2N3859A 2N3858 2N3859 2N3860 2N3858 2N3659 2N3858A 2N3859A E1307 2N3868 BA 4213 2N3658 2N3858-60
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
2n2222 to-92 Abstract: 2N4970 MPS3393 2N2219 transistor PN2218 2n2222 to92 2N4954 FR 9024 MMBT3704 PN2219 Text: NATL SEMICOND DISCRETE H2E D M T -Z l-ai t,SD1130 0D37772 3 • NPN General Purpose Transistors by Ascending Vceo (continued) Part Type MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 MPS6515 MPS6520 MPS6521 MPS6522 MPS6560 PE4010 PE8050 PN3565 PN5135	OCR Scan	PDF	bSD1130 0D37772 MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 MPS6515 2n2222 to-92 2N4970 2N2219 transistor PN2218 2n2222 to92 2N4954 FR 9024 MMBT3704 PN2219
Untitled Abstract: No abstract text available Text: * TO-92 Piastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Po 'c (V). (A) Min @Tc=25°c 'c& (mA) NF Freq c„ CDIL (dB) (MHz) (PF) Case Max Max Style V cbo ^CEO (V) Min (V) Min 2N3693	OCR Scan	PDF	2N3693 2N3694 2N3704 O-92-1 2N3705
2N2926 Abstract: 2N3859A 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N3390 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type b v CEO @ 10m A V hFE V M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN NPN NPN	OCR Scan	PDF	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3859A
n3860 Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394	OCR Scan	PDF	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860 2N292
2N3563 Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088 Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE \| n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15	OCR Scan	PDF	D0D0S15 2N5088 2N5127 O-106 2N5131 2N5133 2N5209 2N5210 2N3563 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133
2N2926 equivalent Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	PDF	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	PDF
2N3565 Abstract: 2N3692 Text: Low Level and General Purpose Amplifiers TY PE POLA NO. RITY CASE M A XIM UM RATINGS HFE Pd IC VCEO mW (mA) 00 min max (T Cob N.F. IC VCE V CE(sat) max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 120+ 12 12 12 10 10 - 120+ 120+ 120+ 120+ - 10	OCR Scan	PDF	2N2924 2N2925 2N2926 2N3390 2N3391 2N3391A 2N3392 2N3393 2N3394 2N3395 2N3565 2N3692

2n7588 Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149 Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.	OCR Scan	PDF
cs9011j Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C Text: CRIMSON SEMICONDUCTOR INC TT DE \| 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah \|V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •	OCR Scan	PDF	2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 2NI975 O-237 cs9011j MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Untitled Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444	OCR Scan	PDF	000356b 2N3416 2N3417 TP3444 TP3564 TP3565 TP3566 TP3567 TP3568 TP3569
2N6008 Abstract: 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4	OCR Scan	PDF	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6008 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014
d33025 Abstract: 2N6000 2n3391 2N6006 2N6002 GET3013 GET3014 GET3638 2n2926 GET706 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	PDF	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025 2N6000 2n3391 2N6006 2N6002 GET3014 GET3638 2n2926
2N6004 Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	PDF	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6004 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
2N2713 Abstract: 2N2714 2N2926 equivalent 2n2714 transistor 2N3404 2N2924 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor 2N2712 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘	OCR Scan	PDF	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N2926 equivalent 2n2714 transistor 2N3404 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor
2N9860 Abstract: 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N2711 2N2712 2N3858 2N2714 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘	OCR Scan	PDF	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N9860 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N3858
2N3606 Abstract: 2N3605 2N3564 2N3111 2N3694 2N3693 2n3194 2N3417 2N3662 2N3663 Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Vceo ^CEO V EBO (V) Min (V) Min (V) Min PD 'c <W) (A) Tc=25"q 2N3417 50 50 5 0.625 0.1 2N3564 30 15 4 bßo VCB ' c e s V CE	OCR Scan	PDF	2N3417 O-92-1 2N3564 2N3605 2N3606 2N36Q7 2N3858A 2N3606 2N3605 2N3111 2N3694 2N3693 2n3194 2N3662 2N3663
2N3877 Abstract: 2n3877a GES6220 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘	OCR Scan	PDF	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3877 2n3877a GES6220

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2N3858 Search Results

2N3858 Price and Stock

Fairchild Semiconductor Corporation 2N3858A

National Semiconductor Corporation 2N3858A

2N3858 Datasheets (53)

2N3858 Datasheets Context Search

Untitled

2N2458

k2645

bfw34 diode

2N3859

IC HXJ 2038

2n2222 to-92

Untitled

2N2926

n3860

2N3563

2N2926 equivalent

EATON CM20A

2N3565

2n7588

cs9011j

Untitled

2N6008

d33025

2N6004

2N2713

2N9860

2N3606

2N3877