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    JRH Electronics 660-022NF22N238

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    TE Connectivity MC306E2-N-23-8SN

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    Amphenol Positronic FC112N2-381.0

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    Others 2N2386

    TRANSISTOR,JFET,P-CHANNEL,TO-5
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    2N238 Datasheets (142)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N238 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N238 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N238 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N238 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N238 Unknown GE Transistor Specifications Scan PDF
    2N238 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N238 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N238 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N238 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N238 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N238 Unknown Vintage Transistor Datasheets Scan PDF
    2N238 Unknown Vintage Transistor Datasheets Scan PDF
    2N2380 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N2380 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N2380 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N2380 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2380 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2380 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2380 Unknown GE Transistor Specifications Scan PDF
    2N2380 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ...

    2N238 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Low-Power Germanium PNP

    Abstract: 2N1377 2n1375 TR526 2N524A 2N3428 2n525a diode GG 64 2N1432 AC123
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 >= 2G524 2Nl057 2N1371 2N1375 ACY16 TRS50 TR650 TR650 2N1997 2N597 2N2382 2N524A TR43A TR43A TR43A 2G525 2G525 2G525 CK658 CKS5C 30 CK65 CK65A 2N1451 TR43 TR43 TR43 2N1447 2N526 ~~:~~ 35 40 TR461 2N237


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    PDF 2G524 2Nl057 2N1371 2N1375 ACY16 TRS50 TR650 2N1997 2N597 Low-Power Germanium PNP 2N1377 TR526 2N524A 2N3428 2n525a diode GG 64 2N1432 AC123

    Untitled

    Abstract: No abstract text available
    Text: 2N2388 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10m


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    PDF 2N2388 Freq30M

    Untitled

    Abstract: No abstract text available
    Text: 2N2387 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10m


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    PDF 2N2387 Freq30M

    transitron

    Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216


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    PDF 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 BFY34 SA2710 transitron rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP

    BSY44

    Abstract: 2SC634A SA2720 2n3404 2SC503 2S0220 2SC109A 2N2193 LOW-POWER SILICON NPN 2SC486
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216


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    PDF 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 BFY34 SA2710 BSY44 2SC634A SA2720 2n3404 2SC503 2S0220 2SC109A 2N2193 LOW-POWER SILICON NPN

    2n261 rca

    Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475


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    PDF 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 BC817 2n261 rca 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A

    KELTRON

    Abstract: b0949 B0539 sot6001 2SC2516M B0123 2n5978
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507


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    PDF 1000n 127var 220AB 220AB 20var KELTRON b0949 B0539 sot6001 2SC2516M B0123 2n5978

    2N2389

    Abstract: 2N2390 2N1711 Texas Instruments TI424
    Text: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711


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    PDF 2N2389, 2N2390 TI424 TI425 2N1613 2N1711 2N2389 2N1711 Texas Instruments

    2n2387

    Abstract: No abstract text available
    Text: TYPES 2N2387, 2N2388 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 4 6 0 2 6 , S E P T E M B E R 1 9 6 4 FOR EXTREMELY LOW-LEVEL, LOW-NOISE, HIGH-GAIN, AMPLIFIER APPLICATIONS Formerly Tf 420 and TI421 Guaranteed hFE at 10 /¿a, T*= — 55°C a n d + 25°


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    PDF 2N2387, 2N2388 TI421 2N929 2N930 2N2387

    2N2386

    Abstract: 2N2386A
    Text: TYPES 2N2386, 2N2386A P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . DL-S 6 8 1 0 9 1 6 , S E P T E M B E R 196 8 AUDIO- TO HIGH-FREQUENCY SMALL-SIGNAL AMPLIFIERS 2N2386A offers the following improvements resulting from process innovation:


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    PDF 2N2386, 2N2386A 2N2386

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


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    PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    2N3909A

    Abstract: 2n390 2N2386
    Text: TYPES 2N3909, 2N3909A P'CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L-S 6 8 1 0 9 1 5 , S E P T E M B E R 1968 ELECTRICALLY SIMILAR TO 2N2386 AND 2N2386A FOR AUDIO- TO HIGH-FREQUENCY SMALL-SIGNAL AMPLIFIERS 2N3909A offers greatly improved |yf, |/C„, ratio


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    PDF 2N3909, 2N3909A 2N2386 2N2386A 2n390

    2N424

    Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


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    PDF 2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N424 2N1722 2N389 to-53 2N389A

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    tube az2

    Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
    Text: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)


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    PDF BSS38 BSW41A T0-18 BSX19 BSX20 BSX21 BSY95A h--22-> crt6-25 tube az2 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


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    PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    2N2243

    Abstract: 2n2405
    Text: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B


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    PDF 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N2243 2n2405

    N3020

    Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
    Text: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220


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    PDF 2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 CBR30 0000S23 N3020 2N2951 2N3114 2N3301 ST 2N3053

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


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    PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    2N1620

    Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


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    PDF 2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N1620 2N1211 2N1886 2N2032 2N5631 JANTX 2N389 2N389A

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29