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    257AB Search Results

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    257AB Price and Stock

    Nexperia 74LVC257ABQ,115

    IC MULTIPLEXER 4 X 2:1 16DHVQFN
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    DigiKey 74LVC257ABQ,115 Digi-Reel 5,655 1
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    74LVC257ABQ,115 Cut Tape 5,655 1
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    74LVC257ABQ,115 Reel 3,000 3,000
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    TTI 74LVC257ABQ,115 Reel 6,000
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    TME 74LVC257ABQ,115 1
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    Nexperia CBT3257ABQ,115

    IC MUX/DEMUX 4 X 2:1 16DHVQFN
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    DigiKey CBT3257ABQ,115 Digi-Reel 472 1
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    CBT3257ABQ,115 Cut Tape 472 1
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    CBT3257ABQ,115 Reel 3,000
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    Mouser Electronics CBT3257ABQ,115 2,889
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    TTI CBT3257ABQ,115 Reel 6,000
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    APEM Inc 5257AB

    TOGGLE SWITCH 5000 MINIATURE
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    DigiKey 5257AB Bulk 25
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    Mouser Electronics 5257AB
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    Newark 5257AB Bulk 25
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    RS 5257AB Bulk 14 Weeks 25
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    Master Electronics 5257AB
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    Rochester Electronics LLC 74LVC257ABQ,115

    NEXPERIA 74LVC257ABQ - MULTIPLEX
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    DigiKey 74LVC257ABQ,115 Bulk 2,126
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    Texas Instruments SN74LVC257ABQBR

    QUADRUPLE 2-LINE TO 1-LINE DATA
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    DigiKey SN74LVC257ABQBR Digi-Reel 1
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    SN74LVC257ABQBR Cut Tape 1
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    SN74LVC257ABQBR Reel 3,000
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    Mouser Electronics SN74LVC257ABQBR 3,000
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    257AB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7085

    Abstract: No abstract text available
    Text: 2N7085 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.075 20 TO-257AB Hermetic Package D G Case Isolated S G D S N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol


    Original
    PDF 2N7085 O-257AB P-36736--Rev. 30-May-94 2N7085

    Untitled

    Abstract: No abstract text available
    Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As


    Original
    PDF BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) O220M BYV32-xxxM BYV32-xxxAM BYV32-xxxRM

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original
    PDF IRFY240 IRFY240M O-257AB 330mJ O220M O-257AB) IRFY240

    Transistor 3-347

    Abstract: 3-347
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M T0-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original
    PDF BDS16 BDS17 O220M T0-257AB) BDS17 O-257AB) Transistor 3-347 3-347

    Untitled

    Abstract: No abstract text available
    Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As


    Original
    PDF BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) BYV32-M O220M BYV32-xxxM BYV32-xxxAM

    Untitled

    Abstract: No abstract text available
    Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As


    Original
    PDF BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) BYV32-M O220M BYV32-xxxM BYV32-xxxAM

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original
    PDF BDS12M2A O-257AB BDS12M2A-JQRS

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M T0-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original
    PDF BDS16 BDS17 O220M T0-257AB) BDS16 O-257AB)

    9528

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original
    PDF IRFY430 IRFY430M O-257AB O220M O-257AB) IRFY430M 9528

    9522 transistor

    Abstract: 9522
    Text: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original
    PDF IRFY240 IRFY240M O-257AB O220M O-257AB) IRFY240M 9522 transistor 9522

    transistor 9527

    Abstract: 9527 irfy330 tr 9527
    Text: N-CHANNEL POWER MOSFET IRFY330 • BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original
    PDF IRFY330 O-257AB O220M O-257AB) transistor 9527 9527 irfy330 tr 9527

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original
    PDF IRFY430 IRFY430M O-257AB 280mJ O220M O-257AB) IRFY430

    BYV32-200

    Abstract: 100v 20a fast recovery power diode
    Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As


    Original
    PDF BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) O220M BYV32-xxxM BYV32-xxxAM BYV32-xxxRM BYV32-200 100v 20a fast recovery power diode

    BDS12M2A

    Abstract: EG marking Q217
    Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original
    PDF BDS12M2A O-257AB BDS12M2A-JQRS BDS12M2A EG marking Q217

    transistor C 4231

    Abstract: 2N7081
    Text: 2N7081 ffSiBcanix in c o r p o ra te d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TO P VIEW o PRODUCT SUMMARY V BR|DSS 100 rDS(ON •d (Ù ) (A) 0.15 12 1 GATE 2 DRAIN 3 SOURCE 1 2 3 C ase Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan
    PDF 2N7081 O-257AB 10peration transistor C 4231 2N7081

    2N7085

    Abstract: No abstract text available
    Text: 2N7085 e r S ü c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) (A) (A) 100 0.075 20 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan
    PDF 2N7085 O-257AB 2N7085

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View


    OCR Scan
    PDF 2N7089 O-257AB 1503C) P-36731-- P-36731--Rev.

    2N7091

    Abstract: No abstract text available
    Text: ITSiicanix 2N7091 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY -10 0 •d k k.O V BR DSS (A) 0.20 -1 4 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1


    OCR Scan
    PDF 2N7091 O-257AB 2N7091

    2N7092

    Abstract: No abstract text available
    Text: 2N7092 CX'SiSconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V fDS(ON) <n) (A) -200 0.50 -8.0 V(BR)DSS •d 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1


    OCR Scan
    PDF 2N7092 O-257AB 10peration 2N7092

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 2N7086 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (Q ) I d (A) 200 0.16 14 TO-257AB H erm etic P ackage O r O — It J |i Case Isolated s G D S Top View


    OCR Scan
    PDF 2N7086 O-257AB P-37012--Rev.

    transistor c 4236

    Abstract: ic cow 160v 150 N7082 2N7082 EI33
    Text: SILICONIX INC 33E D JïiSSSKSä • 0254735 QOlbOSê 7 « S I X 2N 7082 T ^ -u N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BRJDSS •d (A 200 0.30 9.0 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan
    PDF 2N7082 O-257AB transistor c 4236 ic cow 160v 150 N7082 2N7082 EI33

    D 4242 transistor

    Abstract: transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456
    Text: C r 9 ficanix 2N7086 Jm B in c o r p o ra t e d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package T O P VIEW o PRODUCT SUMMARY r DS ON • d (V) (H) (A) 200 0.16 14 V (BR)DSS 1 GATE 2 DRAIN 3 SO U R CE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan
    PDF 2N7086 O-257AB D 4242 transistor transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456

    Untitled

    Abstract: No abstract text available
    Text: T e m ic 2N7090 Siliconix_ P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) ( ß ) I d (A) -2 0 0 0.80 - 5 .7 TO-257AB H erm etic Package S 9 O C ase iso lated O D UUU G D S Tbp View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan
    PDF 2N7090 O-257AB P-37012-- 2N7090_

    2N7090

    Abstract: No abstract text available
    Text: C T S ilico n ix ^ U r 2N7090 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR DSS -2 0 0 •d r DS(ON) (H ) (A) 0 .8 0 -5 .7 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1


    OCR Scan
    PDF 2N7090 O-257AB 2N7090