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    1SS301 Search Results

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    1SS301 Price and Stock

    Toshiba America Electronic Components 1SS301,LF

    DIODE ARRAY GP 80V 100MA SC70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS301,LF Digi-Reel 5,863 1
    • 1 $0.17
    • 10 $0.104
    • 100 $0.17
    • 1000 $0.04105
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    1SS301,LF Cut Tape 5,863 1
    • 1 $0.17
    • 10 $0.104
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    • 1000 $0.04105
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    1SS301,LF Reel 3,000 3,000
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    • 10000 $0.03377
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    Avnet Americas 1SS301,LF Reel 3,000 24 Weeks 3,000
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    • 10000 $0.02086
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    Mouser Electronics 1SS301,LF 2,074
    • 1 $0.12
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    Arrow Electronics 1SS301,LF 3 1
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    Quest Components 1SS301,LF 1,628
    • 1 $0.2
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    Toshiba America Electronic Components 1SS301SU,LF

    DIODE ARRAY GP 80V 100MA SC70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS301SU,LF Cut Tape 1
    • 1 $0.19
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    1SS301SU,LF Digi-Reel 1
    • 1 $0.19
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    1SS301SU,LF Reel
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    Avnet Americas 1SS301SU,LF Reel 3,000
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    E-Switch Inc PV8F2Y1SS-301

    SWITCH PB DPST-NO/NC 2A 48V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PV8F2Y1SS-301 Bulk 20
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    • 100 $21.8415
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    Mouser Electronics PV8F2Y1SS-301
    • 1 $25.08
    • 10 $24.39
    • 100 $20.45
    • 1000 $20.06
    • 10000 $20.06
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    PanJit Semiconductor SS30100HE_R1_00001

    Schottky Diodes & Rectifiers 100V,Schottky,SOD-123HE,3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SS30100HE_R1_00001 4,591
    • 1 $0.5
    • 10 $0.337
    • 100 $0.229
    • 1000 $0.162
    • 10000 $0.114
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    PanJit Semiconductor SS30100HE-AU_R1_000A1

    Schottky Diodes & Rectifiers 100V,Schottky,SOD-123HE,3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SS30100HE-AU_R1_000A1
    • 1 $0.46
    • 10 $0.305
    • 100 $0.207
    • 1000 $0.146
    • 10000 $0.112
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    Find more 1SS301 price and stock on Findchips.com

    1SS301 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS301 Kexin Ultra High Speed Switching Application Original PDF
    1SS301 Toshiba Japanese - Diodes Original PDF
    1SS301 Toshiba Silicon diode for ultra high speed switching applications Original PDF
    1SS301 TY Semiconductor Ultra High Speed Switching Application - SOT-323 Original PDF
    1SS301 Xin Semiconductor SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY Original PDF
    1SS301 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS301 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS301 Toshiba DIODE Scan PDF
    1SS301,LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC 3 USM Original PDF
    1SS301SU,LF Toshiba 1SS301SU - X34 PB-F SOT-323 M8 DIODE (LF), IFM=300MA Original PDF
    1SS301TE85L Toshiba 1SS301 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS301TE85LF Toshiba 1SS301TE85LF - Diode Switching 85V 0.3A 3-Pin USM T/R Original PDF
    1SS301TE85R Toshiba 1SS301 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS301 Features Low forward voltage:VF 3 = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol


    Original     		PDF 1SS301

    Untitled

    Abstract: No abstract text available
    Text: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm l Small package : SC-70 l Low forward voltage : VF 3 = 0.92 V (typ.) l Fast reverse recovery time : trr = 1.6 ns (typ.) l Small total capacitance : CT = 0.9 pF (typ.)


    Original     		PDF 1SS301 SC-70

    1SS101

    Abstract: 1SS101 DIODE Xin Semiconductor solar blocking diode 1SS201 1SS301 diode case R-1 1ss20
    Text: 1SS101 THUR 1SS301 XIN SEMICONDUCTOR ISO9002 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES R-1 For general purpose applications These diodes features very low turn-on voltage and fastswitching. These devices are protected by a Pnjunction guard ring against excessive voltage, such as electrostatic


    Original     		PDF 1SS101 1SS301 ISO9002 0063ounce, 50mVp-p 1SS101 DIODE Xin Semiconductor solar blocking diode 1SS201 1SS301 diode case R-1 1ss20

    Untitled

    Abstract: No abstract text available
    Text: 1SS301CCW SILICON EPITAXIAL PLANAR DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: MA Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current


    Original     		PDF 1SS301CCW

    1SS301

    Abstract: No abstract text available
    Text: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm z Small package : SC-70 z Low forward voltage : VF 3 = 0.9 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.9 pF (typ.)


    Original     		PDF 1SS301 SC-70 1SS301

    1SS301

    Abstract: No abstract text available
    Text: 1SS301 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS301 ○ 超高速度スイッチング用 z z z z 外形が小さい。 順電圧特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm : VF 3 = 0.90V (標準)


    Original     		PDF 1SS301 100mA 1SS301

    1SS301

    Abstract: No abstract text available
    Text: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS301 SC-70 1SS301

    Untitled

    Abstract: No abstract text available
    Text: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit in mm Small package : SC-70 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS301 SC-70 961001EAA2'

    1SS301

    Abstract: No abstract text available
    Text: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm l Small package : SC-70 l Low forward voltage : VF 3 = 0.92 V (typ.) l Fast reverse recovery time : trr = 1.6 ns (typ.) l Small total capacitance : CT = 0.9 pF (typ.)


    Original     		PDF 1SS301 SC-70 1SS301

    MARKING b3

    Abstract: smd b3 1SS301
    Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS301 Features Low forward voltage:VF 3 = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage


    Original     		PDF 1SS301 MARKING b3 smd b3 1SS301

    1SS301

    Abstract: No abstract text available
    Text: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm z Small package : SC-70 z Low forward voltage : VF 3 = 0.9 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.9 pF (typ.)


    Original     		PDF 1SS301 SC-70 1SS301

    Untitled

    Abstract: No abstract text available
    Text: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm Small package : SC-70 Low forward voltage : VF 3 = 0.92 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.)


    Original     		PDF 1SS301 SC-70 SC-70

    Untitled

    Abstract: No abstract text available
    Text: 1SS301CCW SILICON EPITAXIAL PLANAR DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: PH Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current


    Original     		PDF 1SS301CCW

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Untitled

    Abstract: No abstract text available
    Text: 1SS301 TO SHIBA 1 SS301 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp 3 = 0.90V (Typ.)


    OCR Scan     		PDF 1SS301 SS301 SC-70 ANODE1SS301100 961001EAA2'

    S3 DIODE schottky

    Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
    Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching


    OCR Scan     		PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B

    Untitled

    Abstract: No abstract text available
    Text: 1SS301 TO SHIBA 1 SS301 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp 3 = 0.90V (Typ.)


    OCR Scan     		PDF 1SS301 SS301 SC-70 ANODE1SS301100 961001EAA2'

    XL SC-70

    Abstract: 1SS301
    Text: 1SS301 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm . Small Package :SC-70 . Low Forward Voltage :VF= 0.9V Typ. . Fast Reverse Recovery Time : trr= l •6ns(Typ.) . Small Total Capacitance :Ct =0 .9pF(Typ.) 2 -ES t MAXI M U M RATINGS (Ta=25°C)


    OCR Scan     		PDF 1SS301 SC-70 100mA XL SC-70 1SS301

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS301 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS. Unit in mm 2.1 +0.1 • Small Package : SC-70 • Low Forward Voltage : Vjr 3 = 0.90V (Typ.) • Fast Reverse RecoveryTime : • Small Total Capaçitançe


    OCR Scan     		PDF 1SS301 SS301 SC-70 ANODE1SS301r 961001EAA2'

    1SS301

    Abstract: No abstract text available
    Text: TOSHIBA 1SS301 1 SS301 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vjt 3 = 0.90V (Typ.)


    OCR Scan     		PDF 1SS301 SC-70 961001EAA2' 1SS301

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737