1l10 cp2
Abstract: S10005 1L10CP
Text: High Linearity Position Sensing Detector Part Number: S1-0005 Description: 1L10_CP2 The SiTek 1L10 PSD functions according to the Lateral Effect Photodiode principle. It is an analogue device and therefore displays excellent position resolution. The resolution is determined by the system signal-to-noise ratio.
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S1-0005
1l10 cp2
S10005
1L10CP
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SU70
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0236 Description: 1L10_SU70 The SiTek 1L10 functions according to the Lateral Effect Photodiode principle. It is an analogue device and therefore displays excellent position resolution. The resolution is determined by the system signal-to-noise ratio.
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S1-0236
SU70
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Untitled
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0236 Description: 1L10_SU70 5IF 4J5FL - GVODUJPOT BDDPS EJOHUPUIF-BUFSBM&GGFDU1IPUPEJPEFQSJO DJQMF *UJTBOBOBMPHVFEFWJDFBOEUIFSFGPSF EJTQMBZTFYDFMMFOUQPTJUJPOSFTPMVUJPO 5IF SFTPMVUJPOJTEFUFSNJOFECZUIFTZTUFNTJH
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S1-0236
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1L10CP
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0005 Description: 1L10_CP2 The SiTek 1L10 PSD functions according to the Lateral Effect Photodiode principle. It is an analogue device and therefore displays excellent position resolution. The resolution is determined by the system signal-to-noise ratio.
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S1-0005
1L10CP
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1l10
Abstract: SU70
Text: High Linearity Position Sensing Detector Part Number: S1-0236 Description: 1L10_SU70 The SiTek 1L10 functions according to the Lateral Effect Photodiode principle. It is an analogue device and therefore displays excellent position resolution. The resolution is determined by the system signal-to-noise ratio.
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S1-0236
1l10
SU70
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Untitled
Abstract: No abstract text available
Text: Tentative Data sheet 1L10ES-A_CP2 $FWLYH DUHD &KLS DUHD [ PP [ PP &KDUDFWHULVWLFV 3RVLWLRQ QRQOLQHDULW\ 'HWHFWRU UHVLVWDQFH /HDNDJH FXUUHQW 1RLVH FXUUHQW 5HVSRQVLYLW\ &DSDFLWDQFH 5LVH WLPH %LDV YROWDJH UHYHUVH 7KHUPDO GULIW
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1L10ES-A
1l10es
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Untitled
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector 1L10NT one dimensional PSD The SiTek 1L10NT PSD functions according to the Lateral Effect-Photodiode principle. It is an analogue device and therefore displays excellent position resolution. The resolution is determined by the system signal-to-noise ratio. The 1L10NT has a unique
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1L10NT
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Untitled
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0073 Description: 1L10UV_CP2 The SiTek 1L10UV PSD is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S1-0073
1L10UV
400nm.
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Untitled
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector 1L10 one dimensional PSD The SiTek 1L10 PSD functions according to the Lateral Effect-Photodiode principle. It is an analogue device and therefore displays excellent position resolution. The resolution is determined by the system signal-to noise ratio.
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Untitled
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0067 Description: 1L10NT_CP2 The SiTek 1L10NT PSD functions according to the Lateral Effect Photodiode principle. It is an analogue device and therefore displays excellent position resolution. The resolution is determined by the system signal-to-noise ratio. The 1L10NT has a unique
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S1-0067
1L10NT
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1L10NT
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0067 Description: 1L10NT_CP2 The SiTek 1L10NT PSD functions according to the Lateral Effect Photodiode principle. It is an analogue device and therefore displays excellent position resolution. The resolution is determined by the system signal-to-noise ratio. The 1L10NT has a unique
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S1-0067
1L10NT
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Untitled
Abstract: No abstract text available
Text: Tentative Data sheet 1L10ES-A_CP2 $FWLYH DUHD &KLS DUHD [ PP [ PP &KDUDFWHULVWLFV 3RVLWLRQ QRQOLQHDULW\ 'HWHFWRU UHVLVWDQFH /HDNDJH FXUUHQW 1RLVH FXUUHQW 5HVSRQVLYLW\ &DSDFLWDQFH 5LVH WLPH %LDV YROWDJH UHYHUVH 7KHUPDO GULIW
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1L10ES-A
1l10es
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1l10
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0073 Description: 1L10UV_CP2 The SiTek 1L10UV PSD is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S1-0073
1L10UV
400nm.
1l10
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nicomatic a
Abstract: Connecteurs 1L-10 HE13-HE14 1l101 1-l10
Text: A B C D CUT A-A XX x 2.54 + 1.96 5.5 4 A 4 3 6.5 3 11.2 8.9 1.6 2.7 3 A 0.64 XX x 2.54 2 symetrical grooves except model 2 pts and 3 pts (only 1 groove) 3.52 3D view scale 1 : 1 4.6 1.1 2 2 Pitch=2.54 4.8 (XX-1) x 2.54 PCB layout recommended : XX : Number of points : 02 to 25 points
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2D\31
HE13-HE14\03-Connecteurs\1L10-1Y1-XX-1
1L-10-1Y1-XX-1
nicomatic a
Connecteurs
1L-10
HE13-HE14
1l101
1-l10
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1V100RK
Abstract: 1T330 1Z56 N2400 1C39RK N5600 1p39 1V75RK N220 N3300
Text: 1002 Reader's 6/21/99 11:36 AM Page 29 Leaded Temperature Compensating Capacitors • ■ ■ Available in NPO through N5600 dielectrics Specifically designed temperature coefficient characteristic curve Used in high shock and cross over applications Specifications
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N5600
-41Z18RK
1Z22RK
1Z27RK
1Z33RK
1Z39RK
1Z47RK
1Z56RK
1Z68RK
1Z82RK
1V100RK
1T330
1Z56
N2400
1C39RK
1p39
1V75RK
N220
N3300
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digrf
Abstract: MMM7210 GSM homodyne transceiver receiver 8psk schematic diagram mxc91321 schematic diagram of aoc monitor c5287 baseband DigRF GSM1800 GSM1900
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: MMM7210 Rev. 2.2, 07/2010 MMM7210 MMM7210 LGA–170 WCDMA/GSM/EDGE Transceiver 1 Introduction The MMM7210 transceiver is a highly integrated transceiver that supports 3GPP WCDMA/GSM/EGPRS
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MMM7210
MMM7210
MMM7210B
digrf
GSM homodyne transceiver
receiver 8psk schematic diagram
mxc91321
schematic diagram of aoc monitor
c5287
baseband DigRF
GSM1800
GSM1900
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Untitled
Abstract: No abstract text available
Text: 63& ² 36' +LJK /LQHDULW\ 3RVLWLRQ 6HQVLQJ 'HWHFWRU ZLWK 6LJQDO 3URFHVVLQJ &LUFXLW 3DUW QXPEHU 'HVFULSWLRQ 6 ² /B68B63& 7KH 6L7HN /B68B63& LV D / 36' ZLWK DQ DWWDFKHG VLJQDO SURFHVVLQJ FLUFXLW 7KH 36' FXUUHQWV DUH RXWSXW DV ELSRODU YROWDJHV UHSUHVHQWLQJ WKH SRVLWLRQ DQG LQWHQVLW\ RI WKH
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/B68B63&
spc01
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1C44
Abstract: mxc91321
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: MMM7210 Rev. 2.2, 07/2010 MMM7210 MMM7210 LGA–170 WCDMA/GSM/EDGE Transceiver 1 Introduction The MMM7210 transceiver is a highly integrated transceiver that supports 3GPP WCDMA/GSM/EGPRS
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MMM7210
MMM7210
MMM7210B
1C44
mxc91321
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Untitled
Abstract: No abstract text available
Text: IL8/IL10 6 LEADS IL9/IL11 SIEMENS 4 LEADS PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in inches mm FEATURES • IL8/1L10: Four Leads • 1L9/IL11: Six Leads with Base Contact IL8/IL10 PT Collector 10 • 2.0 mm Min. Internal Separation between Conductive Parts
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IL8/1L10:
IL9/IL11
E52744
IEC601/VDE0750
IL8/IL9/IL10/IL11
S23b32fci
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IL10
Abstract: No abstract text available
Text: SIEMENS IL8/IL10 IL9/IL11 4 LEADS 6 LEADS PHOTOTRANSISTOR OPTOCOUPLER FEATURES • IL8/1L10: Four Leads • 1L9/IL11: Six Leads with Base Contact • 2.0 mm Min. Internal Separation between Conductive Parts • 13 mm Min. External Separation of Leads and Creepage Distance
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IL8/IL10
IL9/IL11
IL8/1L10:
1L9/IL11:
E52744
IEC601/VDE0750
IL8/IL9/IL10/IL11
IL10/IL11
IL10
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Untitled
Abstract: No abstract text available
Text: DOMESTIC REPS HAWAII MINNESOTA OHIO ALABAMA Centaur North, Inc. D.A. Case Associates, Inc. Midwest Marketing Associates 2 8 9 0 Zanker Road, Ste. 203 San Jo se, CA 9 5 1 3 4 4 0 8 8 9 4 -0 1 8 2 4 6 2 0 W 77th Street Suite # 2 5 0 M inneapolis, M N 5 5 435
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Untitled
Abstract: No abstract text available
Text: ooozavm c A3& L JO I A3H 133HS O N iM v a a 31VOS A 6 1 1 0 0 1 0 £ Z Z ' d B w o is n o ±H3I3M L V =F 01 a3ioiuis3H ON 3NIMVUQ 3000 33V0 ~ “ CL'O ~ - 3ZIS 03 dS NOIlVOIIddV S0V31 1U SS3dd ‘MOd S '8J LULU^ >10Vd-Z ‘~IVDIld3A ‘1VN3IS ‘Nld ‘AiaW3SSV
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133HS
31VOS
S0V31
10Vd-Z
1-L10Â
96/03Q/B0
96/03Q
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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Solitron J775-2
Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Text: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188
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10D05
RL151G
1N4934
RL152G
1N4935
RL153G
RL154G
1N4936
RL155G
Solitron J775-2
BT196
SS14 TOSHIBA
1n5822 TOSHIBA
SS550
BT127
SE140
NSR8140S
NBS25-400
1N4007 toshiba
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