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ADLINK Technology Inc eUPG Carrier Board,170x170mm(mini-ITX) Modules Accessories eUPG Carrier Board,170x170mm(mini-ITX)/Type6/1INTEL I211/2USB/1PCIE/1PCIEx4
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170X170 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HD965 Abstract: 2SD965 transistor 2sd965 Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 对应国外型号 2SD965 HD965 █ 芯片简介 █ 芯片图芯片尺寸：4 英寸（100mm）芯片代码：C089AJ-00-XXX 芯片厚度：240±20µm 管芯尺寸：890x890µm 2 焊位尺寸：B 极 230×230µm；E 极 170×170µm	Original	PDF	2SD965 HD965 100mm C089AJ-00-XXX 10AIC HD965 2SD965 transistor 2sd965
M/TNC-75 Abstract: No abstract text available Text: Cobham Antenna Systems Microwave Antennas Specialist Antenna Design and Manufacture CATALOGUE 2012 The most important thing we build is trust DEFENCE SECURITY ANTENNAS ANTENNAS SATELLITE COMMUNICATION ANTENNAS COMMERCIAL ANTENNAS Cobham Antenna Systems Microwave Antennas - Newmarket	Original	PDF	Link16 M/TNC-75
IRF540 Abstract: IRF540CHIP IRF540 application Text: 30E D m 7 ^ 5 3 7 00303.35 S G S -T H O M S O N R • _ S G S-THOMSON IlL iM M » IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS:	OCR Scan	PDF	IRF540 170x170 47x51 15x18 IRF540CHIP IRF540 application
IRF540 Abstract: IRF540CHIP Text: SGS-THOMSON itl ¥»HD S IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back Au/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:	OCR Scan	PDF	IRF540 170x170 15x18 MC-0075 IRF540CHIP
MOSFET Termination Structure Abstract: No abstract text available Text: rz7 SGS-THOMSON ^ 7 Mm [ j ^ 0 [ K ] Q i [ L [ l © i r [ Ë ] W 0© S A P P L IC A T IO N N O T E HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET-transistor are fabricated using VLSI technology. A simple chip contains thousands	OCR Scan	PDF	STVHD90. STVHD90 MOSFET Termination Structure
Untitled Abstract: No abstract text available Text: SSDI TRANSISTORS* - THE NPN TRANSISTORS CHIP TYPE INDUSTRY REFERENCE C AMPS hFE b v ceo (VOLTS) ^ 40-450 10-100(50mA,5V) IC’ VCE^ C6E 2N3738,9 0.5 C6T 2N5010-15 0.5 500-lK(CER) 30-180(25mA,10V) 2N5092,5,7 1.0 350-450 10-100(.2A,5V) SPT5502,3 1.0 70.0-800 (CER)	OCR Scan	PDF	2N3738 2N5010-15 500-lK 2N5092 SPT5502 SPT6502 2N4300 2N5152 2N4150 2N3996-9
sgs mosfet Abstract: buz11 application note FZJ 101 Text: rZ J *> 7# . S C S -T H O M S O N l«BËl5i i [ L i e ï » H 0 g i APPLICATION NOTE HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET'transistor are fabricated using VLSI technology. A simple chip contains thousands	OCR Scan	PDF	STVHD90. STVHD90 sgs mosfet buz11 application note FZJ 101