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    SHINDENGEN TR 222

    Abstract: D2S860 D25VB60 F10LC20U S1WBA60B D15VBA d15vba60 D4SBA80 DF25SC6M d3sb60 86
    Text: 1. • -« g a ff* * lo A V V rm (y \ ^ < 4 ^ 0.4 0.8 1 a» S1YB60 S1NB20 S1NB60 S1WBA60 S1WBA60B S1WBA20 S1VB20 S1NB80 1 1.4 S1WBA80Z 1.7 600 800 SHINDENGEN D2SBA20 D2SBA60 LN2SB60 D3B20 D3SBA20 U4SB20 D3SB60 D4SB80 D3SBA60 D4SBA80 D4SB80Z U4SB60 1.1 5


    OCR Scan     		PDF SIYB20 S1ZB20 S1NB20 S1WBA20 S1VB20 S1VBA20 S1YB60 S1ZB60 S1NB60 S1WBA60 SHINDENGEN TR 222 D2S860 D25VB60 F10LC20U S1WBA60B D15VBA d15vba60 D4SBA80 DF25SC6M d3sb60 86

    25SC6M

    Abstract: D10SC4M 15SCA4M 1/jrc 40150
    Text: Schottky Barrier Diodes High f r e q u e n c y r e c t i f y in g E-pack T w in D io d e s 1Z Absolute Maximum Ratings Electrical Characteristics Vf 0jc max [pF] [”C/W] 1 65 25*2 *4 2 120 3.3 * 1 2.5 116 3.3 3.5 190 3.2 150 2.5 130 — lo Conditions Tc


    OCR Scan     		PDF D10SC4M 120SC3M 240SC D360SC3M 25SC6M 15SCA4M 1/jrc 40150